NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N3700
2N3701
TO-18
General purpose amplifier
ABSOLUTE MAXIMUM RATINGS.
DESCRIPTION SYMBOL VALUE UNIT
Collector -Base Voltage VCBO 140 V
Collector -Emitter Voltage VCEO 80 V
Emitter -Base Voltage VEBO 7.0 V
Collector Current IC 1.0 A
Power Dissipation @Ta=25 deg C PD 500 mW
Derate Above 25 deg C 2.85 mW/deg C
@TC=25 deg C PD 1.8 W
Derate Above 25 deg C 10.6 mW/deg C
Operating And Storage Junction Tj, Tstg -65 to +200 deg C
Temperature Range
THERMAL RESISTANCE
Junction to Case Rth(j-c) 70 deg C/W
Junction to Ambient Rth(j-a) 245 deg C/W
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNIT
Collector-Cut off Current ICBO VCB=90V, IE=0 - 10 nA
VCB=90V, IE=0 - 10 uA
Emitter-Cut off Current IEBO VEB=5V, IC=0 - 10 nA
Collector -Base Voltage VCBO IC=100uA, IE=-0 140 - V
Collector -Emitter Voltage VCEO* IC=30mA, IB=0 80 - V
Emitter -Base Voltage VEBO IE=100uA, IC=-0 7.0 - V
Collector Emitter (Sat) Voltage VCE(Sat)* IC=150mA,IB=15mA - 0.2 V
IC=500mA,IB=50mA - 0.5 V
Base Emitter (Sat) Voltage VBE(Sat) * IC=150mA,IB=15mA - 1.1 V
2N3700 2N3701
DC Current Gain hFE* IC=0.1mA,VCE=10V >50 30-100
IC=10mA,VCE=10V >90 40-12O
IC=150mA,VCE=10V 100-300 40-12O
IC=500mA,VCE=10V >50 30-100
IC=1A,VCE=10V >15 >15
Tc= -55 deg C
IC=150mA,VCE=10V >40 -
Continental Device India Limited Data Sheet Page 1 of 3
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) 2N3700-01
DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNIT
Dynamic Characteristics 2N3700 2N3701
Small Signal Current Gain hfe IC=1mA, VCE=5V 80-400 30-200
f=1KHz
Transition Frequency ft VCE=10V,IC=50mA, 100-400 >80 MHz
f=20MHz
Input Capacitance Cibo <60 <60 pF
Output Capacitance Cobo VCB=10V, f=1MHz <12 <12 pF
Collector Base Time Constant rbb'cb'c 15-400 25-400 ps
f=79.8MHz
Noise Figure NF VCE=10V, IC=100uA - 4.0 dB
RS=1kohms, f=1kHz
*Pulse Test: Pulse Width =300us, Duty Cycle=1%
TO-18 Metal Can Package
TO-18 1K/polybag 350 gm/1K pcs 3" x 7.5" x 7.5" 5.0K 17" x 15" x 13.5" 80.0K 34 kgs
PACKAGE
Net Weight/Qty
Details
STANDARD PACK INNER CARTON BOX
Qty
OUTER CARTON BOX
Qty Gr WtSize Size
Packing Detail
G
1
2
3
H
J
L
F
A
D
B
E
C
K
DIM MIN MAX
All diminsions in mm.
A 5.24 5.84
B 4.52 4.97
C 4.31 5.33
D 0.40 0.53
E—0.76
F—1.27
G—2.97
H 0.91 1.17
J 0.71 1.21
K12.70 —
L45 DEG
PIN CONFIGURATION
1. EMITTER
2. BASE
3. COLLECTOR
1
2
3
Continental Device India Limited Data Sheet Page 2 of 3
Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web
Site/CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
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risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119
email@cdil.com www.cdilsemi.com
Continental Device India Limited Data Sheet Page 3 of 3
