BDX67, A, B, C NPN SILICON DARLINGTONS High current power darlingtons designed for power amplification and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC(RMS) IC Collector Current ICM Value BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C Unit 60 80 100 120 80 100 120 140 V V 5.0 V 16 A 20 Base Current BDX67 BDX67A BDX67B BDX67C 0.25 A PT Power Dissipation BDX67 BDX67A BDX67B BDX67C 150 Watts W/C TJ Junction Temperature BDX67 BDX67A BDX67B BDX67C -55 to +200 C IB TS Storage Temperature @ TC = 25 BDX67, A, B, C COMSET SEMICONDUCTORS 1/4 BDX67, A, B, C THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case BDX67 BDX67A BDX67B BDX67C Value Unit 1.17 C/W ELECTRICAL CHARACTERISTICS TC=25C unless otherwise noted Symbol VCEO(SUS) ICEO IEBO Ratings Test Condition(s) Collector-Emitter Breakdown Voltage (*) Collector Cutoff Current Emitter Cutoff Current IC=0.1 A, L=25mH Min Typ Mx Unit BDX67 60 - - BDX67A 80 - - BDX67B 100 - - BDX67C 120 - - VCE=30 V BDX67 - - VCE=40 V BDX67A - - VCE=50 V BDX67B - - VCE=60 V BDX67C BDX67 BDX67A BDX67B BDX67C - - - VBE=5 V TCASE=25C, VCB=40 V V 3 mA - 5.0 mA - - 1 - - 5 BDX67 ICBO Collector-Base Cutoff Current TCASE=150C mA TCASE=25C, VCB=50 V - - 1 - - 5 BDX67A TCASE=150C COMSET SEMICONDUCTORS 2/4 BDX67, A, B, C Symbol Ratings Test Condition(s) Min Typ Mx Unit - - 1 TCASE=150C - - 5 TCASE=25C, VCB=70 V - - 1 - - 5 - - 2 V - 300 - pF - 1 - TCASE=25C, VCB=60 V BDX67B ICBO Collector-Base Cutoff Current mA BDX67C TCASE=150C VCE(SAT) Collector-Emitter saturation Voltage (*) C22b IC=10 A, IB=40 mA IE=0 A, VCB=10V, f=1 MHz ton Switching characteristics VCC=12V, IC=-10 A, IB1=IB2=0.04 A toff fC VCE=-3 V, IC=-5 A, f=1 MHz BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C s - 3.5 - - 50 - (*) Pulse Width 300 s, Duty Cycle 2.0% (1) collector-Emitter voltage limited et VCEci = V rated by an auxiliary circuit COMSET SEMICONDUCTORS 3/4 kHz BDX67, A, B, C MECHANICAL DATA CASE TO-3 DIMENSIONS A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm 25,51 38,93 30,12 17,25 10,89 11,62 8,54 1,55 19,47 1 4,06 inches 1,004 1,53 1,18 0,68 0,43 0,46 0,34 0,6 0,77 0,04 0,16 Base Collector Emitter Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice COMSET SEMICONDUCTORS 4/4