COMSET SEMICONDUCT ORS 1/4
BDX67, A, B, C
ABSOLUTE MAXIMUM RATINGS
Symbol Ratings Value Unit
BDX67 60
BDX67A 80
BDX67B 100
VCEO Collector-Emitter Voltage
BDX67C 120
V
BDX67 80
BDX67A 100
BDX67B 120
VCBO Collector-Base Voltage
BDX67C 140
V
VEBO Emitter-Base Voltage
BDX67
BDX67A
BDX67B
BDX67C 5.0 V
IC(RMS)
BDX67
BDX67A
BDX67B
BDX67C
16
ICCollector Current
ICM
BDX67
BDX67A
BDX67B
BDX67C
20
A
IBBase Current
BDX67
BDX67A
BDX67B
BDX67C
0.25 A
PTPower Dissipation @ TC = 25°
BDX67
BDX67A
BDX67B
BDX67C 150 Watts
W/°C
TJJunction Temperature
TSStorage Temperature
BDX67
BDX67A
BDX67B
BDX67C -55 to +200 °C
BDX67, A, B, C
High current power darlingtons designed for power amplification and
switching applications.
N
NP
PN
N
S
SI
IL
LI
IC
CO
ON
N
D
DA
AR
RL
LI
IN
NG
GT
TO
ON
NS
S
COMSET SEMICONDUCT ORS 2/4
BDX67, A, B, C
THERMAL CHARACTERISTICS
Symbol Ratings Value Unit
RthJ-C Thermal Resistance, Junction to Case
BDX67
BDX67A
BDX67B
BDX67C 1.17 °C/W
ELECTRIC AL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol Ratings Test Condition(s) Min Typ Mx Unit
BDX67 60 - -
BDX67A 80 - -
BDX67B 100 - -
VCEO(SUS) Collector-Emitter
Break do wn Voltag e (*) IC=0.1 A, L=25mH
BDX67C 120 - -
V
VCE=30 V BDX67 --
VCE=40 V BDX67A --
VCE=50 V BDX67B --
ICEO Collector Cutoff Current
VCE=60 V BDX67C --
3mA
IEBO Emitter Cutoff Current VBE=5 V
BDX67
BDX67A
BDX67B
BDX67C
--5.0mA
TCASE=25°C, VCB=40 V --1
TCASE=150°C BDX67 --5
TCASE=25°C, VCB=50 V --1
ICBO
Collector-Base Cutoff
Current
TCASE=150°C BDX67A --5
mA
COMSET SEMICONDUCT ORS 3/4
BDX67, A, B, C
Symbol Ratings Test Condition(s) Min Typ Mx Unit
TCASE=25°C, VCB=60 V --1
TCASE=150°C BDX67B --5
TCASE=25°C, VCB=70 V --1
ICBO
Collector-Base Cutoff
Current
TCASE=150°C BDX67C --5
mA
VCE(SAT)
Collector-Emitter saturation
Voltage (*) IC=10 A, IB= 40 mA BDX67
BDX67A
BDX67B
BDX67C
--2V
C22b IE=0 A, VCB=10V, f=1 MHz
BDX67
BDX67A
BDX67B
BDX67C
- 300 - pF
ton -1-
toff
Switching characteristics VCC=12V, IC=-10 A, IB1=-
IB2=0.04 A
BDX67
BDX67A
BDX67B
BDX67C -3.5 - µs
fCVCE=-3 V, IC=-5 A, f=1 MHz
BDX67
BDX67A
BDX67B
BDX67C
-50 - kHz
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
(1) collector-Emitter voltage limited et VCEci = V rated by an auxiliary circuit
COMSET SEMICONDUCT ORS 4/4
BDX67, A, B, C
MECHANICAL DATA CAS E TO-3
DIMENSIONS
mm inches
A 25,51 1,004
B 38,93 1,53
C 30,12 1,18
D 17,25 0,68
E 10,89 0,43
G 11,62 0,46
H 8,54 0,34
L 1,55 0,6
M 19,47 0,77
N 1 0,04
P 4,06 0,16
Pin 1 : Base
Pin 2 : Collector
Case : Emitter
Information furnished is believed to be accurate and reliable. However, CS assumes no respons abili ty
for the consequences of use of such information nor for errors that could appear.
Data are subject to change without not ice
