LM119QML
LM119QML High Speed Dual Comparator
Literature Number: SNOSAN3A
January 13, 2009
LM119QML
High Speed Dual Comparator
General Description
The LM119 is a precision high speed dual comparator fabri-
cated on a single monolithic chip. It is designed to operate
over a wide range of supply voltages down to a single 5V logic
supply and ground. Further, it has higher gain and lower input
currents than devices like the LM710. The uncommitted col-
lector of the output stage makes the LM119 compatible with
RTL, DTL and TTL as well as capable of driving lamps and
relays at currents up to 25 mA.
Although designed primarily for applications requiring opera-
tion from digital logic supplies, the LM119 is fully specified for
power supplies up to ±15V. It features faster response than
the LM111 at the expense of higher power dissipation. How-
ever, the high speed, wide operating voltage range and low
package count make the LM119 much more versatile than
older devices like the LM711.
Features
■Available with radiation guaranteed
—High Dose Rate 100 krad(Si)
—ELDRS Free 100 krad(Si)
■Two independent comparators
■Operates from a single 5V supply
■Typically 80 ns response time at ±15V
■Minimum fan-out of 2 each side
■Maximum input current of 1 μA over temperature
■Inputs and outputs can be isolated from system ground
■High common mode slew rate
Ordering Information
NS Part Number SMD Part Number NS Package Number Package Description
LM119E/883 E20A 20LD LCC
LM119E-SMD 86014012A E20A 20LD LCC
LM119H/883 H10C 10LD T0-100 Metal Can
LM119H-SMD 8601401IA H10C 10LD T0-100 Metal Can
LM119H-QMLV 5962-9679801VIA H10C 10LD T0-100 Metal Can
LM119HRQMLV
HIGH DOSE RATE (Note 13)
5962R9679801VIA
100 krad(Si)
H10C 10LD T0-100 Metal Can
LM119HRLQMLV
ELDRS FREE (Note 14)
5962R9679802VIA
100 krad(Si)
H10C 10LD T0-100 Metal Can
LM119J/883 J14A 14LD CERDIP
LM119J-SMD 8601401CA J14A 14LD CERDIP
LM119J-QMLV 5962-9679801VCA J14A 14LD CERDIP
LM119JRQMLV
HIGH DOSE RATE (Note 13)
5962R9679801VCA
100 krad(Si)
J14A 14LD CERDIP
LM119JRLQMLV
ELDRS FREE (Note 14)
5962R9679802VCA
100 krad(Si)
J14A 14LD CERDIP
LM119W/883 W10A 10LD CERPAK
LM119W-SMD 8601401HA W10A 10LD CERPAK
LM119W-QMLV 5962-9679801VHA W10A 10LD CERPAK
LM119WRQMLV
HIGH DOSE RATE (Note 13)
5962R9679801VHA
100 krad(Si)
W10A 10LD CERPAK
LM119WRLQMLV
ELDRS FREE (Note 14)
5962R9679802VHA
100 krad(Si)
W10A 10LD CERPAK
LM119WG/883 WG10A 10LD Ceramic SOIC
LM119WG-QMLV 5962-9679801VXA WG10A 10LD Ceramic SOIC
LM119WGRQMLV
HIGH DOSE RATE (Note 14)
5962R9679801VXA
100 krad(Si)
WG10A 10LD Ceramic SOIC
© 2009 National Semiconductor Corporation 201437 www.national.com
LM119QML High Speed Dual Comparator
NS Part Number SMD Part Number NS Package Number Package Description
LM119WGRLQMLV
ELDRS FREE (Note 14)
5962R9679802VXA
100 krad(Si)
WG10A 10LD Ceramic SOIC
LM119 MDE
ELDRS FREE DIE
(Notes 1, 14)
5962R9679802V9A
100 krad(Si)
LM119 MDR
HIGH DOSE RATE DIE
(Notes 1, 13)
5962R9679801V9A
100 krad(Si)
Note 1: FOR ADDITIONAL DIE INFORMATION, PLEASE VISIT THE HI REL WEB SITE AT: www.national.com/analog/space/level_die
Connection Diagrams
Dual-In-Line Package
20143704
Top View
See NS Package Number J14A
Leadless Chip Carrier
20143708
Top View
See NS Package Number E20A
Metal Can Package
20143707
Case is connected to pin 5 (V−)
Top View
See NS Package Number H10C
20143709
See NS Package Number W10A, WG10A
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LM119QML
Schematic Diagram
20143701
*Do not operate the LM119 with more than 16V between GND and V+
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LM119QML
Absolute Maximum Ratings (Note 2)
Total Supply Voltage 36V
Output to Negative Supply Voltage 36V
Ground to Negative Supply Voltage 25V
Ground to Positive Supply Voltage 18V
Differential Input Voltage ±5V
Input Voltage (Note 4) ±15V
Power Dissipation (Note 3) 500 mW
Output Short Circuit Duration 10 sec
Storage Temperature Range −65°C ≤ TA ≤ 150°C
Operating Ambient Temperature Range −55°C ≤ TA ≤ 125°C
Maximum Junction Temperature (TJ) 150°C
Lead Temperature (Soldering, 10 sec.) 260°C
Thermal Resistance
θJA
E Package (Still Air) 89°C/W
E Package (500LF/Min Air flow) 63°C/W
H Package (Still Air) 162°C/W
H Package (500LF/Min Air flow) 88°C/W
J Package (Still Air) 94°C/W
J Package (500LF/Min Air flow) 52°C/W
W Package (Still Air) 215°C/W
W Package (500LF/Min Air flow) 132°C/W
WG Package (Still Air) 215°C/W
WG Package (500LF/Min Air flow) 132°C/W
θJC
E Package 5°C/W
H Package 31°C/W
J Package 11°C/W
W Package 13°C/W
WG Package 13°C/W
Package Weight
E Package TBD
H Package TBD
J Package TBD
W Package TBD
WG Package 225mg
ESD rating (Note 5) 800V
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LM119QML
Quality Conformance Inspection
Mil-Std-883, Method 5005 - Group A
Subgroup Description Temp °C
1 Static tests at 25
2 Static tests at 125
3 Static tests at -55
4 Dynamic tests at 25
5 Dynamic tests at 125
6 Dynamic tests at -55
7 Functional tests at 25
8A Functional tests at 125
8B Functional tests at -55
9 Switching tests at 25
10 Switching tests at 125
11 Switching tests at -55
12 Settling time at 25
13 Settling time at 125
14 Settling time at -55
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LM119QML
LM119/883 Electrical Characteristics
DC Parameters
The following conditions apply, unless otherwise specified. VCM = 0V
Symbol Parameter Conditions Notes Min Max Units Sub-
groups
+ICC Positive Supply Current ±VCC = ±15V, VO = Low
V+ = 5.6V thru 1.4KΩ
11 mA 1
11.5 mA 2
-ICC Negative Supply Current ±VCC = ±15V, VO = Low
V+ = 5.6V thru 1.4KΩ
-4.2 mA 1
-4.5 mA 2
ILeak Output Leakage Current +VCC = 15V, -VCC = -1V,
VGnd = 0V, VO = 35V,
VI = 5mV
1.8 µA 1
9.5 µA 2
10.0 µA 3
IIB Input Bias Current ±VCC = ±15V 0.475 µA 1
0.95 µA 2, 3
+VCC = 5V, −VCC = 0V,
VCM = 1.5V
0.475 µA 1
.95 µA 2, 3
VIO Input Offset Voltage +VCC = 5V, −VCC = 0V,
VCM = 1V, RS ≤ 5KΩ
-3.8 3.8 mV 1
-6.8 6.8 mV 2, 3
+VCC = 5V, −VCC = 0V,
VCM = 3V, RS ≤ 5KΩ
-3.8 3.8 mV 1
-6.8 6.8 mV 2, 3
±VCC = ±15V, VCM = 12V,
RS ≤ 5KΩ
-3.8 3.8 mV 1
-6.8 6.8 mV 2, 3
±VCC = ±15V, VCM = -12V,
RS ≤ 5KΩ
-3.8 3.8 mV 1
-6.8 6.8 mV 2, 3
IIO Input Offset Current +VCC = 5V, −VCC = 0V, VCM = 1V -75 75 nA 1
-100 100 nA 2, 3
+VCC = 5V, −VCC = 0V, VCM = 3V -75 75 nA 1
-100 100 nA 2, 3
±VCC = ±15V, VCM = 12V -75 75 nA 1
-100 100 nA 2, 3
±VCC = ±15V, VCM = -12V -75 75 nA 1
-100 100 nA 2, 3
VSat Output Saturation Voltage ±VCC = ±15V, IO = 25mA,
VI = -5mV
1.5 V 1
+VCC = 5V, −VCC = 0V,
IO= 4.0mA
(Note 12) 0.4 V 1, 2
(Note 12) 0.6 V 3
AVVoltage Gain ±VCC = ±15V, Delta VO = 12V,
RL = 1.4KΩ
(Note 9),
(Note 10)
10.5 K 4
(Note 9),
(Note 10)
10 K 5, 6
+VCC = 5V, −VCC = 0V,
Delta VO = 4.5V, RL = 1.4KΩ
(Note 9),
(Note 11)
8.0 K 4
(Note 9),
(Note 11)
5.0 K 5
(Note 9),
(Note 11)
5.8 K 6
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LM119QML
LM119-SMD Electrical Characteristics SMD 8601401
DC Parameters
The following conditions apply, unless otherwise specified. VCM = 0V
Symbol Parameter Conditions Notes Min Max Units Sub-
groups
+ICC Positive Supply Current ±VCC = ±15V, VO = Low
V+ = 5.6V thru 1.4KΩ
11 mA 1
11.5 mA 2, 3
-ICC Negative Supply Current ±VCC = ±15V, VO = Low
V+ = 5.6V thru 1.4KΩ
-4.2 mA 1
-4.5 mA 2
-6.0 mA 3
ILeak Output Leakage Current +VCC = 15V, -VCC = -1V,
VGnd = 0V, VO = 35V
(Note 6) 1.8 µA 1
(Note 6) 10 µA 2, 3
IIB Input Bias Current ±VCC = ±15V 0.475 µA 1
0.95 µA 2, 3
+VCC = 5V (Note 7) 0.475 µA 1
(Note 7) .95 µA 2, 3
VIO Input Offset Voltage +VCC = 5V, VCM = 1V, RS ≤ 5KΩ(Note 7) -3.8 3.8 mV 1
(Note 7) -6.8 6.8 mV 2, 3
+VCC = 5V, VCM = 3V,
RS ≤ 5KΩ
(Note 7) -3.8 3.8 mV 1
(Note 7) -6.8 6.8 mV 2, 3
±VCC = ±15V, VCM = 12V,
RS ≤ 5KΩ
-3.8 3.8 mV 1
-6.8 6.8 mV 2, 3
±VCC = ±15V, VCM = -12V,
RS ≤ 5KΩ
-3.8 3.8 mV 1
-6.8 6.8 mV 2, 3
IIO Input Offset Current +VCC = 5V, VCM = 1V (Note 7) -75 75 nA 1
(Note 7) -100 100 nA 2, 3
+VCC = 5V, VCM = 3V (Note 7) -75 75 nA 1
(Note 7) -100 100 nA 2, 3
±VCC = ±15V, VCM = 12V -75 75 nA 1
-100 100 nA 2, 3
±VCC = ±15V, VCM = -12V -75 75 nA 1
-100 100 nA 2, 3
VIInput Voltage Range +VCC = 5V (Note 7),
(Note 8)
1.0 3.0 V 1, 2, 3
±VCC = ±15V (Note 8) -12 12 V 1, 2, 3
VSat Output Saturation Voltage ±VCC = ±15V, IO = 25mA,
VI ≤ -5mV
(Note 6) 1.5 V 1, 2, 3
+VCC = 3.5V, -VCC = -1V,
VI ≤ -6mV, IO ≤ 3.2mA
0.4 V 1, 2
0.6 V 3
AVVoltage Gain ±VCC = ±15V, Delta VO = 12V,
RL = 1.4KΩ
(Note 9) 10.5 K 4
(Note 9) 10 K 5, 6
+VCC = 5V, -VCC = 0V,
Delta VO = 4.5V, RL = 1.4KΩ
(Note 7),
(Note 9)
8.0 K 4
(Note 7),
(Note 9)
5.0 K 5
(Note 7),
(Note 9)
5.8 K 6
CMRR Common Mode Rejection Ratio ±VCC = ±15V, VCM = ±12V 80 dB 4
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LM119QML
LM119 Electrical Characteristics SMD 5962-9679801, HIGH DOSE RATE
DC Parameters
The following conditions apply, unless otherwise specified. VCM = 0V
Symbol Parameter Conditions Notes Min Max Units Sub-
groups
+ICC Positive Supply Current ±VCC = ±15V, VO = Low
V+ = 5.6V thru 1.4KΩ
11 mA 1
11.5 mA 2, 3
-ICC Negative Supply Current ±VCC = ±15V, VO = Low
V+ = 5.6V thru 1.4KΩ
-4.2 mA 1
-4.5 mA 2
-6.0 mA 3
ILeak Output Leakage Current +VCC = 15V, -VCC = -1V,
VGnd = 0V, VO = 35V
(Note 6) 1.8 µA 1
(Note 6) 10 µA 2, 3
IIB Input Bias Current ±VCC = ±15V 0.475 µA 1
0.95 µA 2, 3
+VCC = 5V (Note 7) 0.475 µA 1
(Note 7) .95 µA 2, 3
VIO Input Offset Voltage +VCC = 5V, VCM = 1V, RS ≤ 5KΩ(Note 7) -3.8 3.8 mV 1
(Note 7) -6.8 6.8 mV 2, 3
+VCC = 5V, VCM = 3V,
RS ≤ 5KΩ
(Note 7) -3.8 3.8 mV 1
(Note 7) -6.8 6.8 mV 2, 3
±VCC = ±15V, VCM = 12V,
RS ≤ 5KΩ
-3.8 3.8 mV 1
-6.8 6.8 mV 2, 3
±VCC = ±15V, VCM = -12V,
RS ≤ 5KΩ
-3.8 3.8 mV 1
-6.8 6.8 mV 2, 3
IIO Input Offset Current +VCC = 5V, VCM = 1V (Note 7) -75 75 nA 1
(Note 7) -100 100 nA 2, 3
+VCC = 5V, VCM = 3V (Note 7) -75 75 nA 1
(Note 7) -100 100 nA 2, 3
±VCC = ±15V, VCM = 12V -75 75 nA 1
-100 100 nA 2, 3
±VCC = ±15V, VCM = -12V -75 75 nA 1
-100 100 nA 2, 3
VIInput Voltage Range +VCC = 5V (Note 7),
(Note 8)
1.0 3.0 V 1, 2, 3
±VCC = ±15V (Note 8) -12 12 V 1, 2, 3
VSat Output Saturation Voltage ±VCC = ±15V, IO = 25mA,
VI ≤ -5mV
(Note 6) 1.5 V 1, 2, 3
+VCC = 3.5V, -VCC = -1V,
VI ≤ -6mV, IO ≤ 3.2mA
0.4 V 1, 2
0.6 V 3
AVVoltage Gain ±VCC = ±15V, Delta VO = 12V,
RL = 1.4KΩ
(Note 9) 10.5 K 4
(Note 9) 10 K 5, 6
+VCC = 5V, -VCC = 0V,
Delta VO = 4.5V, RL = 1.4KΩ
(Note 7),
(Note 9)
8.0 K 4
(Note 7),
(Note 9)
5.0 K 5
(Note 7),
(Note 9)
5.8 K 6
CMRR Common Mode Rejection Ratio ±VCC = ±15V, VCM = ±12V 80 dB 4
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LM119QML
SMD 5962-9679801, HIGH DOSE RATE DC DELTA Parameters
The following conditions apply, unless otherwise specified.
VCM = 0V, Delta calculations performed on QMLV devices at group B, subgroup 5 only.
Symbol Parameter Conditions Notes Min Max Units Sub-
groups
+ICC Positive Supply Current ±VCC = ±15V, VO = Low
V+ = 5.6V thru 1.4KΩ
-1.0 1.0 mA 1
-ICC Negative Supply Current ±VCC = ±15V, VO = Low
V+ = 5.6V thru 1.4KΩ
-0.5 0.5 mA 1
VIO Input Offset Voltage +VCC = 5V, VCM = 1V, RS ≤ 5KΩ -0.4 0.4 mV 1
SMD 5962-9679801, High Dose Rate
100K Post Radiation Parameters @ 25°C (Note 13)
The following conditions apply, unless otherwise specified. VCM = 0V
Symbol Parameter Conditions Notes Min Max Units Sub-
groups
IIB Input Bias Current ±VCC = ±15V 1.0 µA 1
VCC = 5V 1.0 µA 1
VIO Input Offset Voltage +VCC = 5V, VCM = 1V, RS ≤ 5KΩ -4.0 4.0 mV 1
+VCC = 5V, VCM = 3V, RS ≤ 5KΩ -4.0 4.0 mV 1
±VCC = ±15V, VCM = 12V, RS ≤
5KΩ
-4.0 4.0 mV 1
±VCC = ±15V, VCM = −12V, RS ≤
5KΩ
-4.0 4.0 mV 1
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LM119QML
LM119 Electrical Characteristics SMD 5962-9679802, ELDRS FREE
DC Parameters
The following conditions apply, unless otherwise specified. VCM = 0V
Symbol Parameter Conditions Notes Min Max Units Sub-
groups
+ICC Positive Supply Current ±VCC = ±15V, VO = Low
V+ = 5.6V thru 1.4KΩ
11 mA 1
11.5 mA 2, 3
-ICC Negative Supply Current ±VCC = ±15V, VO = Low
V+ = 5.6V thru 1.4KΩ
-4.2 mA 1
-4.5 mA 2
-6.0 mA 3
ILeak Output Leakage Current +VCC = 15V, -VCC = -1V,
VGnd = 0V, VO = 35V
(Note 6) 1.8 µA 1
(Note 6) 10 µA 2, 3
IIB Input Bias Current ±VCC = ±15V 0.475 µA 1
0.95 µA 2, 3
+VCC = 5V (Note 7) 0.475 µA 1
(Note 7) .95 µA 2, 3
VIO Input Offset Voltage +VCC = 5V, VCM = 1V, RS ≤ 5KΩ(Note 7) -3.8 3.8 mV 1
(Note 7) -6.8 6.8 mV 2, 3
+VCC = 5V, VCM = 3V,
RS ≤ 5KΩ
(Note 7) -3.8 3.8 mV 1
(Note 7) -6.8 6.8 mV 2, 3
±VCC = ±15V, VCM = 12V,
RS ≤ 5KΩ
-3.8 3.8 mV 1
-6.8 6.8 mV 2, 3
±VCC = ±15V, VCM = -12V,
RS ≤ 5KΩ
-3.8 3.8 mV 1
-6.8 6.8 mV 2, 3
IIO Input Offset Current +VCC = 5V, VCM = 1V (Note 7) -75 75 nA 1
(Note 7) -100 100 nA 2, 3
+VCC = 5V, VCM = 3V (Note 7) -75 75 nA 1
(Note 7) -100 100 nA 2, 3
±VCC = ±15V, VCM = 12V -75 75 nA 1
-100 100 nA 2, 3
±VCC = ±15V, VCM = -12V -75 75 nA 1
-100 100 nA 2, 3
VIInput Voltage Range +VCC = 5V (Note 8),
(Note 8)
1.0 3.0 V 1, 2, 3
±VCC = ±15V (Note 8) -12 12 V 1, 2, 3
VSat Output Saturation Voltage ±VCC = ±15V, IO = 25mA,
VI ≤ -5mV
(Note 6) 1.5 V 1, 2, 3
+VCC = 3.5V, -VCC = -1V,
VI ≤ -6mV, IO ≤ 3.2mA
0.4 V 1, 2
0.6 V 3
AVVoltage Gain ±VCC = ±15V, Delta VO = 12V,
RL = 1.4KΩ
(Note 9) 10.5 K 4
(Note 9) 10 K 5, 6
+VCC = 5V, -VCC = 0V,
Delta VO = 4.5V, RL = 1.4KΩ
(Note 7),
(Note 9)
8.0 K 4
(Note 7),
(Note 9)
5.0 K 5
(Note 7),
(Note 9)
5.8 K 6
CMRR Common Mode Rejection Ratio ±VCC = ±15V, VCM = ±12V 80 dB 4
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LM119QML
SMD 5962-9679802, ELDRS FREE DC DELTA Parameters
The following conditions apply, unless otherwise specified.
VCM = 0V, Delta calculations performed on QMLV devices at group B, subgroup 5 only.
Symbol Parameter Conditions Notes Min Max Units Sub-
groups
+ICC Positive Supply Current ±VCC = ±15V, VO = Low
V+ = 5.6V thru 1.4KΩ
-1.0 1.0 mA 1
-ICC Negative Supply Current ±VCC = ±15V, VO = Low
V+ = 5.6V thru 1.4KΩ
-0.5 0.5 mA 1
VIO Input Offset Voltage +VCC = 5V, VCM = 1V, RS ≤ 5KΩ -0.4 0.4 mV 1
SMD 5962-9679802, ELDRS FREE 100K Post Radiation Parameters @ 25°C
(Note 14)
The following conditions apply, unless otherwise specified. VCM = 0V
Symbol Parameter Conditions Notes Min Max Units Sub-
groups
IIB Input Bias Current ±VCC = ±15V 1.0 µA 1
VCC = 5V 1.0 µA 1
VIO Input Offset Voltage +VCC = 5V, VCM = 1V, RS ≤ 5KΩ -4.0 4.0 mV 1
+VCC = 5V, VCM = 3V, RS ≤ 5KΩ -4.0 4.0 mV 1
±VCC = ±15V, VCM = 12V, RS ≤
5KΩ
-4.0 4.0 mV 1
±VCC = ±15V, VCM = −12V, RS ≤
5KΩ
-4.0 4.0 mV 1
Note 2: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed
specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test
conditions.
Note 3: The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature), θJA (package
junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is PDmax = (TJmax - TA)/
θJA or the number given in the Absolute Maximum Ratings, whichever is lower.
Note 4: For supply voltages less than ±15V the absolute maximum input voltage is equal to the supply voltage.
Note 5: Human Body model, 1.5KΩ in series with 100pF.
Note 6: VI ≥ 8mV at extremes for ILeak and VI ≤ −8mV at extremes for VSat (VI to exceed VOS.
Note 7: 5V differential across +VCC and −VCC.
Note 8: Parameter guaranteed by VIO and IIO tests.
Note 9: K = V/mV.
Note 10: Gain is computed with an output swing from +13.5V to +1.5V.
Note 11: Gain is computed with an output swing from +5.0V to +0.5V.
Note 12: Output is monitored by measuring VI with limits from 0 to 6mV at all temperatures
Note 13: Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics except as listed in the Post Radiation Limits Table.
These parts may be dose rate sensitive in a space environment and demonstrate enhanced low dose rate sensitivity. Radiation end point limits for the noted
parameters are guaranteed only for the conditions as specified in MIL-STD-883, per Test Method 1019, Condition A.
Note 14: Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics except as listed in the Post Radiation Limits Table.
Low dose rate testing has been performed on a wafer-by-wafer basis, per Test Method 1019, Condition D of MIL-STD-883, with no enhanced low dose rate
sensitivity (ELDRS).
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LM119QML
Typical Performance Characteristics
Input Currents
20143710
Common Mode Limits
20143711
Transfer Function
20143712
Response Time for Various
Input Overdrives
20143713
Response Time for Various
Input Overdrives
20143714
Input Characteristics
20143715
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LM119QML
Response Time for Various
Input Overdrives
20143716
Response Time for Various
Input Overdrives
20143717
Output Saturation Voltage
20143718
Supply Current
20143719
Supply Current
20143720
Output Limiting
Characteristics
20143721
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LM119QML
Revision History
Date Released Revision Section Originator Changes
07/24/08 A New release to corporate format L. Lytle 2 MDS datasheets converted into one
corporate data sheet format. Added Radiation
information. MDS data sheets MNLM119-X
Rev. 0F1 & MDLM119-X Rev 2A2 will be
archived.
01/13/09 B Features, Ordering Info., Electrical
Section, Notes 13 and 14
Larry McGee Added reference to ELDRS and Die NSID's to
data sheet. Correction from: 100k rd(Si) to 100
krad(Si) in ordering info. Changed wording in
Notes 13 and 14 Revision A will be Archived.
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LM119QML
Physical Dimensions inches (millimeters) unless otherwise noted
Metal Can Package (H)
NS Package Number H10C
Cavity Dual-In-Line Package (J)
NS Package Number J14A
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LM119QML
Ceramic Flatpack (W)
NS Package Number W10A
Ceramic SOIC (WG)
NS Package Number WG10A
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LM119QML
Metal Leadless Chip Carrier (LCC)
NS Package Number E20A
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LM119QML
Notes
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LM119QML
Notes
LM119QML High Speed Dual Comparator
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