Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - (c) NXP N.V. (year). All rights reserved or (c) Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - (c) Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia SO D 123 W PMEG6020ELR 60 V, 2 A low leakage current Schottky barrier rectifier 8 September 2016 Product data sheet 1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits * * * * * * * * Average forward current: IF(AV) 2 A Reverse voltage: VR 60 V Extremely low leakage current Low forward voltage High power capability due to clip-bonding technology Small and flat lead SMD plastic package AEC-Q101 qualified High temperature Tj 175 C 3. Applications * * * * * Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Reverse polarity protection Low power consumption applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit IF(AV) average forward current square wave; = 0.5 ; f = 20 kHz; Tsp 160 C - - 2 A VR reverse voltage Tj = 25 C - - 60 V VF forward voltage IF = 2 A; Tj = 25 C - 690 760 mV IR reverse current VR = 60 V; tp 300 s; Tj = 25 C; 0.02 ; pulsed - 90 300 nA PMEG6020ELR NXP Semiconductors 60 V, 2 A low leakage current Schottky barrier rectifier 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K cathode[1] 2 A anode [1] Simplified outline 1 Graphic symbol 1 2 2 sym001 SOD123W The marking bar indicates the cathode. 6. Ordering information Table 3. Ordering information Type number PMEG6020ELR Package Name Description Version SOD123W plastic surface mounted package; 2 leads SOD123W 7. Marking Table 4. Marking codes Type number Marking code PMEG6020ELR K2 PMEG6020ELR Product data sheet All information provided in this document is subject to legal disclaimers. 8 September 2016 (c) NXP Semiconductors N.V. 2016. All rights reserved 2 / 15 PMEG6020ELR NXP Semiconductors 60 V, 2 A low leakage current Schottky barrier rectifier 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VR reverse voltage Tj = 25 C - 60 V IF forward current Tsp = 155 C; = 1 - 2.83 A IF(AV) average forward current square wave; = 0.5 ; f = 20 kHz; Tamb 90 C - 2 A square wave; = 0.5 ; f = 20 kHz; Tsp 160 C - 2 A - 50 A [2] - 680 mW [3] - 1150 mW [1] - 2140 mW IFSM non-repetitive peak forward current square wave; tp = 8 ms; Tj(init) = 25 C Ptot total power dissipation Tamb 25 C [1] Tj junction temperature - 175 C Tamb ambient temperature -55 175 C Tstg storage temperature -65 175 C [1] [2] [3] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm . 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) [1] [2] [3] [4] [5] thermal resistance from junction to solder point Min Typ Max Unit [1][2] - - 220 K/W [1][3] - - 130 K/W [1][4] - - 70 K/W [5] - - 18 K/W For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm . Device mounted on a ceramic PCB, Al2O3, standard footprint. Soldering point of cathode tab. PMEG6020ELR Product data sheet All information provided in this document is subject to legal disclaimers. 8 September 2016 (c) NXP Semiconductors N.V. 2016. All rights reserved 3 / 15 PMEG6020ELR NXP Semiconductors 60 V, 2 A low leakage current Schottky barrier rectifier 006aab649 103 duty cycle = Zth(j-a) (K/W) 1 102 0.5 0.25 0.1 10 0.02 1 0.75 0.33 0.2 0.05 0.01 0 10- 1 10- 3 10- 2 10- 1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aab650 103 Zth(j-a) (K/W) duty cycle = 1 102 0.5 0.25 0.1 10 0.02 1 0.75 0.33 0.2 0.05 0.01 0 10- 1 10- 3 10- 2 10- 1 FR4 PCB, mounting pad for cathode 1 cm Fig. 2. 1 10 102 2 tp (s) 103 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMEG6020ELR Product data sheet All information provided in this document is subject to legal disclaimers. 8 September 2016 (c) NXP Semiconductors N.V. 2016. All rights reserved 4 / 15 PMEG6020ELR NXP Semiconductors 60 V, 2 A low leakage current Schottky barrier rectifier 102 006aab651 duty cycle = 1 Zth(j-a) (K/W) 0.5 0.25 10 0.1 0.02 0.75 0.33 0.2 0.05 0.01 1 0 10- 1 10- 3 10- 2 10- 1 1 10 102 tp (s) 103 Ceramic PCB, Al2O3, standard footprint Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMEG6020ELR Product data sheet All information provided in this document is subject to legal disclaimers. 8 September 2016 (c) NXP Semiconductors N.V. 2016. All rights reserved 5 / 15 PMEG6020ELR NXP Semiconductors 60 V, 2 A low leakage current Schottky barrier rectifier 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit V(BR)R reverse breakdown voltage IR = 1 mA; Tj = 25 C 60 - - V VF forward voltage IF = 0.1 A; Tj = 25 C - 475 540 mV IF = 0.5 A; Tj = 25 C - 550 605 mV IF = 0.7 A; Tj = 25 C - 575 625 mV IF = 1 A; Tj = 25 C - 605 660 mV IF = 1.6 A; Tj = 25 C - 660 720 mV IF = 2 A; Tj = 25 C - 690 760 mV VR = 5 V; tp 300 s; Tj = 25 C; 0.02 ; pulsed - 5 - nA VR = 10 V; tp 300 s; Tj = 25 C; 0.02 ; pulsed - 6 - nA VR = 40 V; tp 300 s; Tj = 25 C; 0.02 ; pulsed - 25 50 nA VR = 60 V; tp 300 s; Tj = 25 C; 0.02 ; pulsed - 90 300 nA VR = 10 V; tp 300 s; Tj = 125 C; 0.02 ; pulsed - 25 - A VR = 60 V; tp 300 s; Tj = 125 C; 0.02 ; pulsed - 120 - A VR = 1 V; f = 1 MHz; Tj = 25 C - 110 - pF VR = 4 V; f = 1 MHz; Tj = 25 C - 65 - pF VR = 10 V; f = 1 MHz; Tj = 25 C - 45 - pF IR Cd reverse current diode capacitance trr reverse recovery time IF = 0.5 A; IR = 0.5 A; IR(meas) = 0.1 A; Tj = 25 C - 4.5 - ns VFRM peak forward recovery voltage IF = 0.5 A; dIF/dt = 20 A/s; Tj = 25 C - 580 - mV PMEG6020ELR Product data sheet All information provided in this document is subject to legal disclaimers. 8 September 2016 (c) NXP Semiconductors N.V. 2016. All rights reserved 6 / 15 PMEG6020ELR NXP Semiconductors 60 V, 2 A low leakage current Schottky barrier rectifier aaa-009639 10 IF (A) IR (A) (1) 1 (2) aaa-009640 10-2 10-3 (1) (2) 10-4 (3) (3) 10-5 10-1 (4) 10-6 10-2 10-7 (4) (5) (6) (5) 10-8 10-3 10-9 10-4 0 0.2 0.4 0.6 0.8 VF (V) 10-10 1.0 (1) Tj = 175 C (2) Tj = 150 C (3) Tj = 125 C (4) Tj = 85 C (5) Tj = 25 C (6) Tj = -40 C Fig. 4. (6) 0 20 40 60 VR (V) (1) Tj = 175 C (2) Tj = 150 C (3) Tj = 125 C (4) Tj = 85 C (5) Tj = 25 C (6) Tj = -40 C Forward current as a function of forward voltage; typical values Fig. 5. aaa-009641 175 Cd (pF) 150 Reverse current as a function of reverse voltage; typical values aaa-009648 1.6 PF(AV) (W) (4) (3) 1.2 125 100 (2) 0.8 (1) 75 50 0.4 25 0 0 20 40 VR (V) 0 60 f = 1 MHz; Tamb = 25 C Fig. 6. Fig. 7. Product data sheet 1 2 IF(AV) (A) 3 Tj = 175 C (1) = 0.1 (2) = 0.2 (3) = 0.5 (4) = 1 Diode capacitance as a function of reverse voltage; typical values PMEG6020ELR 0 Average forward power dissipation as a function of average forward current; typical values All information provided in this document is subject to legal disclaimers. 8 September 2016 (c) NXP Semiconductors N.V. 2016. All rights reserved 7 / 15 PMEG6020ELR NXP Semiconductors 60 V, 2 A low leakage current Schottky barrier rectifier aaa-009643 100 PR(AV) (mW) aaa-009649 3 (1) IF(AV) (A) 75 2 50 (1) (2) (2) (3) 1 25 0 (4) (3) (4) 0 20 40 VR (V) 0 60 Tj = 150 C (1) = 1 (2) = 0.5 (3) = 0.2 (4) = 0.1 Fig. 8. Average reverse power dissipation as a function of reverse voltage; typical values IF(AV) (A) Fig. 9. 2 (1) 2 (3) (2) (3) 1 (4) 0 0 (4) 50 100 0 150 200 Tamb (C) 2 FR4 PCB, mounting pad for cathode 1 cm Tj = 175 C (1) = 1 (DC) (2) = 0.5; f = 20 kHz (3) = 0.2; f = 20 kHz (4) = 0.1; f = 20 kHz Fig. 10. Average forward current as a function of ambient temperature; typical values PMEG6020ELR Product data sheet 150 200 Tamb (C) aaa-009651 3 (2) 1 100 Average forward current as a function of ambient temperature; typical values IF(AV) (A) (1) 50 FR4 PCB, standard footprint Tj = 175 C (1) = 1 (DC) (2) = 0.5; f = 20 kHz (3) = 0.2; f = 20 kHz (4) = 0.1; f = 20 kHz aaa-009650 3 0 0 50 100 150 200 Tamb (C) Ceramic PCB, Al2O3, standard footprint Tj = 175 C (1) = 1 (DC) (2) = 0.5; f = 20 kHz (3) = 0.2; f = 20 kHz (4) = 0.1; f = 20 kHz Fig. 11. Average forward current as a function of ambient temperature; typical values All information provided in this document is subject to legal disclaimers. 8 September 2016 (c) NXP Semiconductors N.V. 2016. All rights reserved 8 / 15 PMEG6020ELR NXP Semiconductors 60 V, 2 A low leakage current Schottky barrier rectifier aaa-009652 3 (1) IF(AV) (A) 2 (2) (3) 1 (4) 0 0 50 100 150 Tsp (C) 200 Tj = 175 C (1) = 1 (DC) (2) = 0.5; f = 20 kHz (3) = 0.2; f = 20 kHz (4) = 0.1; f = 20 kHz Fig. 12. Average forward current as a function of solder point temperature; typical values 11. Test information IF IR(meas) time IR trr 006aad022 Fig. 13. Reverse recovery definition PMEG6020ELR Product data sheet All information provided in this document is subject to legal disclaimers. 8 September 2016 (c) NXP Semiconductors N.V. 2016. All rights reserved 9 / 15 PMEG6020ELR NXP Semiconductors 60 V, 2 A low leakage current Schottky barrier rectifier IF time VF VFRM VF time 001aab912 Fig. 14. Forward recovery definition P tcy duty cycle = tp tcy tp t 006aac658 Fig. 15. Duty cycle definition The current ratings for the typical waveforms are calculated according to the equations: IF(AV) = IM x with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM x with IRMS defined as RMS current. Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PMEG6020ELR Product data sheet All information provided in this document is subject to legal disclaimers. 8 September 2016 (c) NXP Semiconductors N.V. 2016. All rights reserved 10 / 15 PMEG6020ELR NXP Semiconductors 60 V, 2 A low leakage current Schottky barrier rectifier 12. Package outline 1.9 1.5 1.1 0.9 1 0.6 0.3 3.7 3.3 2.8 2.4 2 1.05 0.75 0.22 0.10 Dimensions in mm 08-11-06 Fig. 16. Package outline SOD123W 13. Soldering 4.4 2.9 2.8 solder lands 1.1 1.2 (2x) (2x) 2.1 1.6 solder resist solder paste occupied area 1.1 (2x) 1.2 (2x) Dimensions in mm sod123w_fr Fig. 17. Reflow soldering footprint for SOD123W PMEG6020ELR Product data sheet All information provided in this document is subject to legal disclaimers. 8 September 2016 (c) NXP Semiconductors N.V. 2016. All rights reserved 11 / 15 PMEG6020ELR NXP Semiconductors 60 V, 2 A low leakage current Schottky barrier rectifier 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMEG6020ELR v.3 20160908 Product data sheet - PMEG6020ELR v.2 Modifications: * Figure 12: editorial change PMEG6020ELR v.2 20140603 Product data sheet - PMEG6020ELR v.1 PMEG6020ELR v.1 20131108 Preliminary data sheet - - PMEG6020ELR Product data sheet All information provided in this document is subject to legal disclaimers. 8 September 2016 (c) NXP Semiconductors N.V. 2016. All rights reserved 12 / 15 PMEG6020ELR NXP Semiconductors 60 V, 2 A low leakage current Schottky barrier rectifier Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors' aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. 15. Legal information Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Data sheet status Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. 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NXP Semiconductors hereby expressly objects to applying the customer's general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations -- A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. All information provided in this document is subject to legal disclaimers. 8 September 2016 (c) NXP Semiconductors N.V. 2016. All rights reserved 13 / 15 PMEG6020ELR NXP Semiconductors 60 V, 2 A low leakage current Schottky barrier rectifier Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip, HiPerSmart, HITAG, IC-bus logo, ICODE, I-CODE, ITEC, MIFARE, MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE -- are trademarks of NXP Semiconductors N.V. HD Radio and HD Radio logo -- are trademarks of iBiquity Digital Corporation. PMEG6020ELR Product data sheet All information provided in this document is subject to legal disclaimers. 8 September 2016 (c) NXP Semiconductors N.V. 2016. All rights reserved 14 / 15 PMEG6020ELR NXP Semiconductors 60 V, 2 A low leakage current Schottky barrier rectifier 16. Contents 1. General description......................................................1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 3 9. Thermal characteristics............................................... 3 10. Characteristics............................................................ 6 11. Test information......................................................... 9 12. Package outline........................................................ 11 13. Soldering................................................................... 11 14. Revision history........................................................12 15. Legal information..................................................... 13 (c) NXP Semiconductors N.V. 2016. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 8 September 2016 PMEG6020ELR Product data sheet All information provided in this document is subject to legal disclaimers. 8 September 2016 (c) NXP Semiconductors N.V. 2016. All rights reserved 15 / 15