BC80716LT3G - ON SEMICONDUCTOR

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PMEG6020ELR

60 V, 2 A low leakage current Schottky barrier rectifier

8 September 2016 Product data sheet

1. General description

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an

integrated guard ring for stress protection, encapsulated in a SOD123W small and flat lead

Surface-Mounted Device (SMD) plastic package.

2. Features and benefits

•Average forward current: IF(AV) ≤ 2 A

•Reverse voltage: VR ≤ 60 V

•Extremely low leakage current

•Low forward voltage

•High power capability due to clip-bonding technology

•Small and flat lead SMD plastic package

•AEC-Q101 qualified

•High temperature Tj ≤ 175 °C

3. Applications

•Low voltage rectification

•High efficiency DC-to-DC conversion

•Switch mode power supply

•Reverse polarity protection

•Low power consumption applications

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

IF(AV) average forward

current

square wave; δ = 0.5 ; f = 20 kHz;

Tsp ≤ 160 °C

- - 2 A

VRreverse voltage Tj = 25 °C - - 60 V

VFforward voltage IF = 2 A; Tj = 25 °C - 690 760 mV

IRreverse current VR = 60 V; tp ≤ 300 µs; Tj = 25 °C; δ ≤

0.02 ; pulsed

- 90 300 nA

NXP Semiconductors PMEG6020ELR

60 V, 2 A low leakage current Schottky barrier rectifier

Product data sheet 8 September 2016 2 / 15

5. Pinning information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 K cathode[1]

2 A anode

SOD123W

sym001

1 2

[1] The marking bar indicates the cathode.

6. Ordering information

Table 3. Ordering information

PackageType number

Name Description Version

PMEG6020ELR SOD123W plastic surface mounted package; 2 leads SOD123W

7. Marking

Table 4. Marking codes

Type number Marking code

PMEG6020ELR K2

NXP Semiconductors PMEG6020ELR

60 V, 2 A low leakage current Schottky barrier rectifier

Product data sheet 8 September 2016 3 / 15

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VRreverse voltage Tj = 25 °C - 60 V

IFforward current Tsp = 155 °C; δ = 1 - 2.83 A

square wave; δ = 0.5 ; f = 20 kHz; Tamb ≤

90 °C

[1] - 2 AIF(AV) average forward current

square wave; δ = 0.5 ; f = 20 kHz; Tsp ≤

160 °C

- 2 A

IFSM non-repetitive peak

forward current

square wave; tp = 8 ms; Tj(init) = 25 °C - 50 A

[2] - 680 mW

[3] - 1150 mW

Ptot total power dissipation Tamb ≤ 25 °C

[1] - 2140 mW

Tjjunction temperature - 175 °C

Tamb ambient temperature -55 175 °C

Tstg storage temperature -65 175 °C

[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

[1][2] - - 220 K/W

[1][3] - - 130 K/W

Rth(j-a) thermal resistance

from junction to

ambient

in free air

[1][4] - - 70 K/W

Rth(j-sp) thermal resistance

from junction to solder

point

[5] - - 18 K/W

[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a

significant part of the total power losses.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

[4] Device mounted on a ceramic PCB, Al2O3, standard footprint.

[5] Soldering point of cathode tab.

NXP Semiconductors PMEG6020ELR

60 V, 2 A low leakage current Schottky barrier rectifier

Product data sheet 8 September 2016 4 / 15

006aab649

102

103

Zth(j-a)

(K/W)

10- 1

tp(s)

10- 3 102103

10110- 2 10- 1

duty cycle =

10.75

0.5 0.33

0.2

0.25

0.1

0.05

0.02 0.01

FR4 PCB, standard footprint

Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

006aab650

102

103

Zth(j-a)

(K/W)

10- 1

tp(s)

10- 3 102103

10110- 2 10- 1

duty cycle =

10.75

0.5 0.33

0.2

0.25

0.1 0.05

0.02 0.01

FR4 PCB, mounting pad for cathode 1 cm2

Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

NXP Semiconductors PMEG6020ELR

60 V, 2 A low leakage current Schottky barrier rectifier

Product data sheet 8 September 2016 5 / 15

006aab651

tp(s)

10- 3 102103

10110- 2 10- 1

102

Zth(j-a)

(K/W)

10- 1

duty cycle =

10.75

0.5 0.33

0.2

0.25

0.1

0.05

0.02 0.01

Ceramic PCB, Al2O3, standard footprint

Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

NXP Semiconductors PMEG6020ELR

60 V, 2 A low leakage current Schottky barrier rectifier

Product data sheet 8 September 2016 6 / 15

10. Characteristics

Table 7. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

V(BR)R reverse breakdown

voltage

IR = 1 mA; Tj = 25 °C 60 - - V

IF = 0.1 A; Tj = 25 °C - 475 540 mV

IF = 0.5 A; Tj = 25 °C - 550 605 mV

IF = 0.7 A; Tj = 25 °C - 575 625 mV

IF = 1 A; Tj = 25 °C - 605 660 mV

IF = 1.6 A; Tj = 25 °C - 660 720 mV

VFforward voltage

IF = 2 A; Tj = 25 °C - 690 760 mV

VR = 5 V; tp ≤ 300 µs; Tj = 25 °C; δ ≤

0.02 ; pulsed

- 5 - nA

VR = 10 V; tp ≤ 300 µs; Tj = 25 °C; δ ≤

0.02 ; pulsed

- 6 - nA

VR = 40 V; tp ≤ 300 µs; Tj = 25 °C; δ ≤

0.02 ; pulsed

- 25 50 nA

VR = 60 V; tp ≤ 300 µs; Tj = 25 °C; δ ≤

0.02 ; pulsed

- 90 300 nA

VR = 10 V; tp ≤ 300 µs; Tj = 125 °C; δ ≤

0.02 ; pulsed

- 25 - µA

IRreverse current

VR = 60 V; tp ≤ 300 µs; Tj = 125 °C; δ ≤

0.02 ; pulsed

- 120 - µA

VR = 1 V; f = 1 MHz; Tj = 25 °C - 110 - pF

VR = 4 V; f = 1 MHz; Tj = 25 °C - 65 - pF

Cddiode capacitance

VR = 10 V; f = 1 MHz; Tj = 25 °C - 45 - pF

trr reverse recovery time IF = 0.5 A; IR = 0.5 A; IR(meas) = 0.1 A;

Tj = 25 °C

- 4.5 - ns

VFRM peak forward recovery

voltage

IF = 0.5 A; dIF/dt = 20 A/µs; Tj = 25 °C - 580 - mV

NXP Semiconductors PMEG6020ELR

60 V, 2 A low leakage current Schottky barrier rectifier

Product data sheet 8 September 2016 7 / 15

aaa-009639

10-2

10-3

10-1

(A)

10-4

VF (V)

0 1.00.80.4 0.60.2

(1)

(2)

(3)

(5)(4) (6)

(1) Tj = 175 °C

(2) Tj = 150 °C

(3) Tj = 125 °C

(4) Tj = 85 °C

(5) Tj = 25 °C

(6) Tj = −40 °C

Fig. 4. Forward current as a function of forward

voltage; typical values

aaa-009640

10-2

10-3

10-4

10-5

10-6

10-7

10-8

10-9

(A)

10-10

VR (V)

0 604020

(1)

(2)

(3)

(4)

(5)

(6)

(1) Tj = 175 °C

(2) Tj = 150 °C

(3) Tj = 125 °C

(4) Tj = 85 °C

(5) Tj = 25 °C

(6) Tj = −40 °C

Fig. 5. Reverse current as a function of reverse

voltage; typical values

VR (V)

0 604020

aaa-009641

175

(pF)

100

125

150

f = 1 MHz; Tamb = 25 °C

Fig. 6. Diode capacitance as a function of reverse

voltage; typical values

aaa-009648

IF(AV) (A)

0 321

0.8

0.4

1.2

1.6

PF(AV)

(W)

(1)

(2)

(3)

(4)

Tj = 175 °C

(1) δ = 0.1

(2) δ = 0.2

(3) δ = 0.5

(4) δ = 1

Fig. 7. Average forward power dissipation as a

function of average forward current; typical

values

NXP Semiconductors PMEG6020ELR

60 V, 2 A low leakage current Schottky barrier rectifier

Product data sheet 8 September 2016 8 / 15

aaa-009643

VR (V)

0 604020

100

PR(AV)

(mW)

(1)

(2)

(3)

(4)

Tj = 150 °C

(1) δ = 1

(2) δ = 0.5

(3) δ = 0.2

(4) δ = 0.1

Fig. 8. Average reverse power dissipation as a

function of reverse voltage; typical values

Tamb (°C)

0 20015050 100

aaa-009649

IF(AV)

(A)

(1)

(2)

(3)

(4)

FR4 PCB, standard footprint

Tj = 175 °C

(1) δ = 1 (DC)

(2) δ = 0.5; f = 20 kHz

(3) δ = 0.2; f = 20 kHz

(4) δ = 0.1; f = 20 kHz

Fig. 9. Average forward current as a function of

ambient temperature; typical values

Tamb (°C)

0 20015050 100

aaa-009650

IF(AV)

(A)

(1)

(2)

(3)

(4)

FR4 PCB, mounting pad for cathode 1 cm2

Tj = 175 °C

(1) δ = 1 (DC)

(2) δ = 0.5; f = 20 kHz

(3) δ = 0.2; f = 20 kHz

(4) δ = 0.1; f = 20 kHz

Fig. 10. Average forward current as a function of

ambient temperature; typical values

Tamb (°C)

0 20015050 100

aaa-009651

IF(AV)

(A)

(1)

(2)

(3)

(4)

Ceramic PCB, Al2O3, standard footprint

Tj = 175 °C

(1) δ = 1 (DC)

(2) δ = 0.5; f = 20 kHz

(3) δ = 0.2; f = 20 kHz

(4) δ = 0.1; f = 20 kHz

Fig. 11. Average forward current as a function of

ambient temperature; typical values

NXP Semiconductors PMEG6020ELR

60 V, 2 A low leakage current Schottky barrier rectifier

Product data sheet 8 September 2016 9 / 15

Tsp (°C)

0 20015050 100

aaa-009652

IF(AV)

(A)

(1)

(2)

(3)

(4)

Tj = 175 °C

(1) δ = 1 (DC)

(2) δ = 0.5; f = 20 kHz

(3) δ = 0.2; f = 20 kHz

(4) δ = 0.1; f = 20 kHz

Fig. 12. Average forward current as a function of solder point temperature; typical values

11. Test information

time

trr

IR(meas)

006aad022

Fig. 13. Reverse recovery definition

NXP Semiconductors PMEG6020ELR

60 V, 2 A low leakage current Schottky barrier rectifier

Product data sheet 8 September 2016 10 / 15

001aab912

time

VFRM

Fig. 14. Forward recovery definition

tcy

006aac658

duty cycle δ =

tcy

Fig. 15. Duty cycle definition

The current ratings for the typical waveforms are calculated according to the equations: IF(AV) = IM

× δ with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM × √δ with IRMS defined as

RMS current.

Quality information

This product has been qualified in accordance with the Automotive Electronics Council (AEC)

standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in

automotive applications.

NXP Semiconductors PMEG6020ELR

60 V, 2 A low leakage current Schottky barrier rectifier

Product data sheet 8 September 2016 11 / 15

12. Package outline

08-11-06Dimensions in mm

2.8

2.4

3.7

3.3

1.05

0.75

1.9

1.5

0.6

0.3

0.22

0.10

1.1

0.9

Fig. 16. Package outline SOD123W

13. Soldering

2.9

2.8

4.4

1.62.1 1.2

(2×)

1.1

(2×)

solder lands

solder resist

occupied area

solder paste

1.1

(2×)

1.2

(2×) sod123w_fr

Dimensions in mm

Fig. 17. Reflow soldering footprint for SOD123W

NXP Semiconductors PMEG6020ELR

60 V, 2 A low leakage current Schottky barrier rectifier

Product data sheet 8 September 2016 12 / 15

14. Revision history

Table 8. Revision history

Data sheet ID Release date Data sheet status Change notice Supersedes

PMEG6020ELR v.3 20160908 Product data sheet - PMEG6020ELR v.2

Modifications: •Figure 12: editorial change

PMEG6020ELR v.2 20140603 Product data sheet - PMEG6020ELR v.1

PMEG6020ELR v.1 20131108 Preliminary data sheet - -

NXP Semiconductors PMEG6020ELR

60 V, 2 A low leakage current Schottky barrier rectifier

Product data sheet 8 September 2016 13 / 15

15. Legal information

Data sheet status

Document

status [1][2]

Product

status [3]

Definition

Objective

[short] data

sheet

Development This document contains data from

the objective specification for product

development.

Preliminary

[short] data

sheet

Qualification This document contains data from the

preliminary specification.

Product

[short] data

sheet

Production This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the Internet at URL http://www.nxp.com.

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NXP Semiconductors PMEG6020ELR

60 V, 2 A low leakage current Schottky barrier rectifier

Product data sheet 8 September 2016 14 / 15

Trademarks

Notice: All referenced brands, product names, service names and

trademarks are the property of their respective owners.

Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip,

HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE,

MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET,

TrenchMOS, TriMedia and UCODE — are trademarks of NXP

Semiconductors N.V.

HD Radio and HD Radio logo — are trademarks of iBiquity Digital

Corporation.

NXP Semiconductors PMEG6020ELR

60 V, 2 A low leakage current Schottky barrier rectifier

Product data sheet 8 September 2016 15 / 15

16. Contents

1. General description......................................................1

2. Features and benefits.................................................. 1

3. Applications.................................................................. 1

4. Quick reference data....................................................1

5. Pinning information......................................................2

6. Ordering information....................................................2

7. Marking.......................................................................... 2

8. Limiting values............................................................. 3

9. Thermal characteristics............................................... 3

10. Characteristics............................................................6

11. Test information......................................................... 9

12. Package outline........................................................ 11

13. Soldering................................................................... 11

14. Revision history........................................................12

15. Legal information..................................................... 13

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 8 September 2016