SOT223 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTOR
ISSUE 3 NOVEMBER 1995
FEATURES
* 2A continuous current
* Useful hFE up to 6A
* Fast Switching
PARTMARKING DETAIL DEVICE TYPE IN FULL
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 100 V
Collector-Emitter Voltage VCEO 80 V
Emitter-Base Voltage VEBO 10 V
Peak Pulse Current ICM 6A
Continuous Collector Current IC2A
Power Dissipation Ptot 2W
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 100 240 V IC
=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO 80 110 V IC
=10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO 10 16 V IE=100µA
Collector Cut-Off Current ICBO 0.01
10 µA
µA
VCB=80V
VCB=80V, Tamb
=100°C
Emitter Cut-Off Current IEBO 0.1 µAVEB=8V
Collector Cut-Off Current ICES 10 µAVCES
=80V
Collector-Emitter
Saturation Voltage
VCE(sat) 0.79
0.80
0.88
0.99
0.86
0.88
0.90
1.00
1.13
V
V
V
V
V
IC=0.25A, IB
=0.25mA*
IC
=0.4A, IB
=0.4mA*
IC
=1A, IB
=1mA*
IC
=2A, IB
=20mA*
IC
=2A, IB
=20mA
FZT603
C
C
E
B
Tj=150°C
Dim Millimeters Inches
Min Max Min Max
A 6.3 6.7 0.248 0.264
B 3.3 3.7 0.130 0.146
C 1.7 0.067
D 0.6 0.8 0.024 0.031
E 2.9 3.1 0.114 0.122
F 0.24 0.32 0.009 0.013
G NOM 4.6 NOM 0.181
H 0.85 1.05 0.033 0.041
K 0.02 0.10 0.0008 0.004
L 6.7 7.3 0.264 0.287
M NOM 2.3 NOM 0.0905
PACKAGE OUTLINE DETAILS
FZT603
ELECTRICAL CHARACTERISTICS (Continued)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Base-Emitter
Saturation Voltage
VBE(sat) 1.7 1.95 V IC
=2A, IB
=20mA*
Base-Emitter Turn-On Voltage VBE(on) 1.5 1.75 V IC=2A, VCE=5V*
Static Forward
Current Transfer Ratio
hFE 3k
5k
3k
2k
14k
15k
14k
10k
2k
750
100k
IC
=50mA, VCE
=5V*
IC
=500mA, VCE
=5V*
IC
=1A, VCE=5V*
IC
=2A, VCE=5V*
IC
=5A, VCE=5V*
IC
=6A, VCE=5V*
Transition Frequency fT150 MHz IC
=100mA, VCE
=10V
f=20MHz
Output Capacitance Cibo 90 pF VEB=500mV, f=1MHz
Output Capacitance Cobo 15 pF VCB=10V, f=1MHz
Switching Times ton 0.5 µsIC
=0.5A, VCE=10V
IB1=IB2=0.5mA
toff 1.6 µs
*Measured under pulsed conditions. Pulse width=300ms. Duty cycle ≤2%
Spice parameter data is available upon request for this device
FZT603 FZT603
TYPICAL CHARACTERISTICS
VCE(sat) v IC
I
C
- Collector Current (Amps)
V- (Volts)
0
0.4
0.01 0.1 101
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I
C
- Collector Current (Amps)
VBE(sat) v IC
V- (Volts)
0.6
0.01 100.1 1
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I
C
/I
B
=100
I
C
/I
B
=100
I
C
- Collector Current (Amps)
hFE v IC
h- Gain normalised to 1 Amp
0.001 0.01 100.1 1
0.5
1.0
1.5
2.0
2.5
V
CE
=5V
I
C
- Collector Current (Amps)
VBE(on) v IC
V- (Volts)
0.6
1.0
1.4
1.8
0.01 0.1 110
0.2
V
CE
=5V
-55°C
+25°C
+100°C
0.4
0.8
1.2
1.6
2.2
0.2
-55°C
+25°C
+100°C
+175°C
-55°C
+25°C
+100°C
+175°C
0.4
-55°C
+25°C
+100°C
DC
1s
10ms
100ms
1ms
100
µ
S
1101000.1
0.01
0.1
1
10
T
amb
=25°C
V
CE
- Collector Voltage (Volts)
Safe Operating Area
Single Pulse Test
ELECTRICAL CHARACTERISTICS (Continued)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Base-Emitter
Saturation Voltage
VBE(sat) 1.7 1.95 V IC
=2A, IB
=20mA*
Base-Emitter Turn-On Voltage VBE(on) 1.5 1.75 V IC=2A, VCE=5V*
Static Forward
Current Transfer Ratio
hFE 3k
5k
3k
2k
14k
15k
14k
10k
2k
750
100k
IC
=50mA, VCE
=5V*
IC
=500mA, VCE
=5V*
IC
=1A, VCE=5V*
IC
=2A, VCE=5V*
IC
=5A, VCE=5V*
IC
=6A, VCE=5V*
Transition Frequency fT150 MHz IC
=100mA, VCE
=10V
f=20MHz
Output Capacitance Cibo 90 pF VEB=500mV, f=1MHz
Output Capacitance Cobo 15 pF VCB=10V, f=1MHz
Switching Times ton 0.5 µsIC
=0.5A, VCE=10V
IB1=IB2=0.5mA
toff 1.6 µs
*Measured under pulsed conditions. Pulse width=300ms. Duty cycle ≤2%
Spice parameter data is available upon request for this device
FZT603 FZT603
TYPICAL CHARACTERISTICS
VCE(sat) v IC
I
C
- Collector Current (Amps)
V- (Volts)
0
0.4
0.01 0.1 101
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I
C
- Collector Current (Amps)
VBE(sat) v IC
V- (Volts)
0.6
0.01 100.1 1
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I
C
/I
B
=100
I
C
/I
B
=100
I
C
- Collector Current (Amps)
hFE v IC
h- Gain normalised to 1 Amp
0.001 0.01 100.1 1
0.5
1.0
1.5
2.0
2.5
V
CE
=5V
I
C
- Collector Current (Amps)
VBE(on) v IC
V- (Volts)
0.6
1.0
1.4
1.8
0.01 0.1 110
0.2
V
CE
=5V
-55°C
+25°C
+100°C
0.4
0.8
1.2
1.6
2.2
0.2
-55°C
+25°C
+100°C
+175°C
-55°C
+25°C
+100°C
+175°C
0.4
-55°C
+25°C
+100°C
DC
1s
10ms
100ms
1ms
100
µ
S
1101000.1
0.01
0.1
1
10
T
amb
=25°C
V
CE
- Collector Voltage (Volts)
Safe Operating Area
Single Pulse Test
