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Is Now Part of
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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December 1998
NDT456P
P-Channel Enhancement Mode Field Effect Transistor
General Description Features
______________________________________________________________________________
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter NDT456P Units
VDSS Drain-Source Voltage -30 V
VGSS Gate-Source Voltage ±20 V
IDDrain Current - Continuous (Note 1a) ±7.5 A
- Pulsed ±20
PDMaximum Power Dissipation (Note 1a) 3W
(Note 1b) 1.3
(Note 1c) 1.1
TJ,TSTG Operating and Storage Temperature Range -65 to 150 °C
THERMAL CHARACTERISTICS
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 42 °C/W
RθJC Thermal Resistance, Junction-to-Case (Note 1) 12 °C/W
NDT456P Rev. F
-7.5 A, -30 V. RDS(ON) = 0.030 @ VGS = -10 V
RDS(ON) = 0.045 @ VGS = -4.5 V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely
used surface mount package.
Power SOT P-Channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process is especially tailored to
minimize on-state resistance and provide superior
switching performance. These devices are particularly
suited for low voltage applications such as notebook
computer power management, battery powered circuits,
and DC motor control.
D
DS
G
D
S
G
© 1998 Fairchild Semiconductor Corporation
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA -30 V
IDSS Zero Gate Voltage Drain Current VDS = -24 V, VGS = 0 V -1 µA
TJ = 55°C -10 µA
IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS= 0 V -100 nA
ON CHARACTERISTICS (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = - 250 µA -1 -1.5 -3 V
TJ = 125°C -0.5 -1.1 -2.6
RDS(ON) Static Drain-Source On-Resistance VGS = -10 V, ID = -7.5 A 0.026 0.03
TJ = 125°C 0.035 0.054
VGS = - 4.5 V, ID = -6 A 0.041 0.045
ID(on) On-State Drain Current VGS = -10 V , VDS = - 5 V -20 A
VGS = -4.5 V, VDS = - 5 V -10
Gfs Forward Transconductance VGS = -10 V, ID = -7.5 A13 S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = -15 V, VGS = 0 V,
f = 1.0 MHz 1440 pF
Coss Output Capacitance 905 pF
Crss Reverse Transfer Capacitance 355 pF
SWITCHING CHARACTERISTICS (Note 2)
tD(on)Turn - On Delay Time VDD = -15 V, ID = -7 A,
VGEN = -10 V, RGEN = 12 10 20 ns
trTurn - On Rise Time 65 120 ns
tD(off) Turn - Off Delay Time 70 130 ns
tfTurn - Off Fall Time 70 130 ns
QgTotal Gate Charge VDS = -10 V,
ID = -7.5 A, VGS = -10 V 47 67 nC
Qgs Gate-Source Charge 5nC
Qgd Gate-Drain Charge 12 nC
NDT456P Rev. F
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Units
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
ISMaximum Continuous Drain-Source Diode Forward Current -2.5 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = - 2.5 A (Note 2) - 0.85 -1.2 V
trr Reverse Recovery Time VGS = 0 V, IF = - 2.5 A dIF/dt = 100 A/µs 140 ns
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the
PD
(
t
)
=
T
J
T
A
R
θ
J
A
(t)=
T
J
T
A
R
θ
J
C
+R
θ
C
A
(t)=ID
2
(
t
)
×RDS(ON)@TJ
solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is defined by users. For general reference: Applications on 4.5"x5" FR-4 PCB under still air environment,
typical RθJA is found to be:
a. 42oC when mounted on a 1 in2 pad of 2oz copper.
b. 95oC when mounted on a 0.066in2 pad of 2oz copper.
c. 110oC/W when mounted on a 0.00123in2 pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDT456P Rev. F
1a 1b 1c
NDT456P Rev. F
-50 -25 0 25 50 75 100 125 150
0.5
0.75
1
1.25
1.5
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE ON-RESISTANCE
J
V = -10V
GS
I =-7.5A
D
R , NORMALIZED
DS(ON)
-20-16-12-8-40
0.5
1
1.5
2
2.5
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
D
R , NORMALIZED
DS(on)
V =-3.5V
GS
-10
-5.0
-7.0
-4.5
-4.0
Typical Electrical Characteristics
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
Figure 3. On-Resistance Variation with
Temperature. Figure 4. On-Resistance Variation with Drain
Current and Temperature.
Figure 5. Transfer Characteristics. Figure 6. Gate Threshold Variation with
Temperature.
-4-3.2-2.4-1.6-0.8
-20
-16
-12
-8
-4
0
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
25125
V =- 10V
DS
GS
D
T = -55°C
J
-20-16-12-8-40
0
0.5
1
1.5
2
2.5
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
V = -10V
GS
T = 125°C
J
25°C
-55°C
D
R , NORMALIZED
DS(on)
-50 -25 025 50 75 100 125 150
0.6
0.7
0.8
0.9
1
1.1
1.2
T , JUNCTION TEMPERATURE (°C)
GATE-SOURCE THRESHOLD VOLTAGE
J
V , NORMALIZED
GS(th)
I =- 250µA
D
V = VGS
DS
-3-2-10
-20
-16
-12
-8
-4
0
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
V = -10V
GS
DS
D
-3.5
-4.0
-3.0
-2.5
-4.5
-5.0
-6.0
NDT456P Rev. F
-50 -25 0 25 50 75 100 125 150
0.94
0.96
0.98
1
1.02
1.04
1.06
1.08
1.1
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE
I =- 250µA
D
BV , NORMALIZED
DSS
J00.2 0.4 0.6 0.8 11.2
0.0001
0.001
0.01
0.1
1
5
20
-V , BODY DIODE FORWARD VOLTAGE (V)
-I , REVERSE DRAIN CURRENT (A)
T = 125°C
J
25°C
-55°C
V = 0V
GS
SD
S
0 10 20 30 40 50 60
0
2
4
6
8
10
Q , GATE CHARGE (nC)
-V , GATE-SOURCE VOLTAGE (V)
g
GS
I = -7.5A
D-10V
-20V
V =- 5V
DS
0.1 0.2 0.5 1 2 5 10 20 30
200
300
400
500
1000
2000
3000
4000
V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
f = 1 MHz
V = 0V
GS
C
oss
C
iss
C
rss
Figure 7. Breakdown Voltage Variation with
Temperature. Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature.
Figure 9. Capacitance Characteristics. Figure 10. Gate Charge Characteristics.
Typical Electrical Characteristics
Figure 11. Switching Test Circuit.Figure 12. Switching Waveforms.
D
S
-VDD
RL
VOUT
VGS DUT
VIN
RGENG10%
50%
90%
10%
90%
90%
50%
VIN
VOUT
on off
d(off)f
r
d(on)
t t
tt
t
t
INVERTED
10%
PULSE WIDTH
NDT456P Rev. F
Typical Thermal Characteristics
-10-8-6-4-20
0
3
6
9
12
15
18
I , DRAIN CURRENT (A)
g , TRANSCONDUCTANCE (SIEMENS)
25°C
D
FS
V = -5V
DS
125°C
T = -55°C
J
Figure 13. Transconductance Variation with Drain
Current and Temperature.
0 0.2 0.4 0.6 0.8 1
0.5
1
1.5
2
2.5
3
3.5
2oz COPPER MOUNTING PAD AREA (in )
STEADY-STATE POWER DISSIPATION (W)
2
1c
1b
1a
4.5"x5" FR-4 Board
T = 25 C
Still Air
Ao
Figure 14. SOT-223 Maximum Steady-State Power
Dissipation versus Copper Mounting Pad
Area.
Figure 17. Transient Thermal Response Curve.
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal
response will change depending on the circuit board design.
Figure 16. Maximum Safe Operating Area.
00.2 0.4 0.6 0.8 1
0
2
4
6
8
10
2oz COPPER MOUNTING PAD AREA (in )
-I , STEADY-STATE DRAIN CURRENT (A)
2
1c
1b
1a
4.5"x5" FR-4 Board
T = 25 C
Still Air
V = -10V
Ao
GS
D
0.1 0.2 0.5 1 2 5 10 30 50
0.01
0.03
0.1
0.3
1
3
10
20
40
- V , DRAIN-SOURCE VOLTAGE (V)
-I , DRAIN CURRENT (A)
DS
D
RDS(ON) LIMIT
V = -10V
SINGLE PULSE
R = See Note 1c
T = 25°C
GS
A
θJA
100ms
10s
DC
10ms
1ms
1s
100us
Figure 15. Maximum Steady-State Drain
Current versus Copper Mounting Pad
Area.
0.0001 0.001 0.01 0.1 1 10 100 300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
12
R (t) = r(t) * R
R = See Note 1 c
θJA
θJA
θJA
T - T = P * R (t)
θJAA
J
P(pk)
t
1 t
2
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E2CMOSTM
FACT™
FACT Quiet Series™
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