ALPHANUMERIC INDEX CROSS-REFERENCE (Continued) Motorola Motorola Motorola Motoroia Industry Direct Similar Page Industry Direct Similar Page Part Number Replacement Replacement Number Part Number Replacement Replacement Number 2N6283 2N6283 3-172 2N6323 MJ10015 3-606 2N6283JAN 2N6283JAN 3-172 2N6324 MJ10015 3-606 2N6283JTX 2N6283JTX 3-172 2N6325 MJ10015 3-606 2N6283JTXV 2N6283JTXV 3-172 2N6326 2N6328 - 2N6284 2N6284 3-172 2N6327 2N6328 - 2N6284JAN 2N6284JAN 3-172 2N6328 2N6328 - 2N6284JTX 2N6284JTX 3-172 2N6329 2N5884 3-127 2N6284JTXV 2N6284JTXV 3-172 2N6330 2NS884 3-127 2N6285 2N6285 3-172 2N6331 2N5884 3-127 2N6286 2N6286 3-472 2N6338 2N6338 3-188 2N6286JAN 2N6286JAN 3-172 2N6338JAN 2N6338JAN 3-188 2N6286JTX 2N6286JTX 3-172 2N6338JTX 2N6338JTX 3-188 2N6286JTXV 2N6286JTXV 3-172 2N6338JTXV 2N6338JTXV 3-188 2N6287 2N6287 3-172 2N6339 2N6339 3-188 2N6287JAN 2N6287JAN 3-172 2N6340 2N6340 3-188 2N6287JTX 2N6287JTX 3-172 2N6341 2N6341 3-188 2N6287JTXV 2N6287JTXV 3-172 2N6341JAN 2N6341JAN 3-188 2N6288 2N6288 3-151 2N6341JTX 2N6341JTX 3-188 2N6289 2N6288 3-151 2N6341JTXV 2N6341TXV 3-188 2N6290 2N6292 3-151 2N6354 2N6339 3-188 2N6291 2N6292 3-151 2N6355 2N6057 3-143 2N6292 2N6292 3-151 2N6356 2N6057 3-143 2N6293 2N6292 3-151 2N6357 2N6058 3-143 2N6294 2N6294 3-177 2N6358 2N6058 3-143 2N6295 2N6295 3-177 2N6359 2N5885, 3-127 2N6296 2N6296 3-177 2N6371 2N3055 36 2N6297 2N6297 3-177 2N6372 2N5428 3-101 2N6298 2N6298 3-147 2N6373 2N5428 3-101 2N6298JAN 2N62985AN 3-147 2N6374 2N5428 3-101 2NG298JTX 2N6298JTX 3-147 2N6377 2N6377 3-194 2N6298UTXV 2N6298JTXV 3-147 2N6378 2N6378 3-191 2N6299 2N6299 3-147 2N6378JAN 2N6378JAN 3-191 2N6299JAN 2N6299JAN 3-147 2N6378JTX 2N6378JTX 3-191 2N6299JTX 2N6299JTX 3-147 2N6378JTXV 2N6378JTXV 3-191 2N6299JTXV 2N6299JTXV 3-147 2N6379 2N6379 3-191 2N6300 2N6300 3-147 2N6379JNAN 2N6379JAN 3-191 2N6300JAN 2N6300JAN 3-147 2N6379JTX 2N6379JTX 3-191 2N6300JTX 2N6300JTX 3-147 2N6379JTXV 2NG379JTXV 3-191 2N6300JTXV 2NG300JTXV 3-147 2N6380 2N6377 3-191 2N6301 2N6301 3-147 2N6381 2N6378 3-191 2N6301JAN 2N6301JAN 3-147 2N6382 2N6379 3-191 2N6301JTX 2N6301JTX 3-147 2N6383 2N6383 3-195 2N6301 JTXV 2N6301JTXV 3-147 2N6383JAN 2N6383JAN 3-195 2N6302 2N5630 3-105 2N6383JTX 2N6383JTX 3-195 2N6303 2N6303 3-32 2N6383JTXV 2N6383NTXV 3-195 2N6306 2N6306 3-181 2N6384 2N6384 3-195 2N6306JAN 2N6306JAN 3-181 2N6384J AN 2N6384JAN 3-195 2N6306JTX 2N6306JTX 3-181 2N6384JTX 2N6384JTX 3-195 2N6307 2N6307 3-181 2N6384JTXV 2N6384JTXV 3-195 2N6308 2N6308 3-181 2N6385 2N6385 3-195 2N6308JAN 2N6308JAN 3-184 2N6385JAN 2N6385JAN 3-195 2N6308JTX 2N6308JTX 3-181 2N6385JTX 2N6385JTX 3-195 2N6312 2N6318 3-185 2N6385JTXV 2N6385JTXV 3-191 2N6313 2N6318 3-185 2N6386 2N6386 3-199 2N6314 2N6318 3-185 2N6387 2N6387 3-199 2N6315 2N5428 3-101 2N6388 2N6388 3-199 2N6316 2N5428 3-101 2N6406 MJE171 3-862 2N6317 2N6317 3-185 2N6407 MJE172 3-862 2N6318 2N6318 3-185 2N6408 MJE181 3-862 2N6322 MJ10015 3-606 2N6409 MJE182 3-862 *Consult Motorola if a direct replacement is necessary.TABLE 1 METAL TO-204, TO-204AE (continued) Resistive Switching IcCont | VoEO(sus} . ts tf fr Pp (Case) Amps Volts Device Type hFE @l us as @lg | MHz Watts Max Min NPN PNP Min/Max Amp Max Max Amp Min @ 25C 50 200 BUS51 15 min 50 350 400 MJ10015044 10 min 40 2.5 1 20 250 500 BUT340e## 15 min 32 3 1.5 32 250 MJ100160## 10 min 40 25 1 20 250 56 400 BUT330## 20 min 36 3.3 1.6 36 250 60 60 MJ14000 MJ14001 15/100 50 300 30 MJ14002 MJ14003 15/100 50 300 200 MJ100200## 75 min 15 3.5 0.5 30 250 250 MJ100210## 75 min 15 3.5 0.5 30 250 70 125 BUS50e 15 min 50 350 @ Modified TO-3, 60 mii pins, # |hfg| @ 1 MHz, ## Darlington TABLE 2 METAL TO-205 (Formerly TO-39) STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR (Pin 3 connected to case) 241 CASE 79-04 (TO-205AD) Resistive Switching icCont | VcEO(sus) . ts tf fr Pp (Case) Amps Volts Device Type hE @l\c us ps @l | Mz Watts Max Min NPN PNP Min/Max Amp Max Max Amp Min @ 25C 0.5 300 MJ4646 20 min 0.5 0.72* 0.05 40 5 400 MJ4647 20 min 0.5 0.72* 0.05 30 5 3 40 2N3719 25/180 1 0.4* 1 60 6 2N3867 40/200 1.5 0.4* 1.5 60 6 60 2N3720 25/180 1 0.4* 1 60 6 2N3e68 30/150 1.5 0.4* 1.5 60 6 80 2N6303 30/150 1.6 0.4* 1.5 60 6 60 2N4877 20/100 4 15 0.5 4 4 10 80 2N5336 2N6190 30/120 2 2 0.2 2 30 6 2N5337 2N6191 60/240 2 2 0.2 2 30 6 100 2N5338 30/120 2 2 0.2 2 30 10 . 2N5339 2N6193 60/240 2 2 0.2 2 30 6 *toff [| JAN, JTX, JTXV Available 2-8TABLE 12 POWER DARLINGTONS (continued) Resistive Switching ai Verolsus} Device Type hpe | @le 3 i @le te "Osta Case Max Min NPN PNP Min/Max | Amp Max Max | Amp Min @ 25C JEDEC/MOT 50 90 MJ11030 MJ11031 400 min 50 300 TO-204/197 120 MJ11032 MJ11033 400 min 50 300 TO-204/197 400 MJ10015 10 min 40 2.5 0.5 20 10 250 TO-204/197 500 BUT34e 15 min 32 3 1.5 32 250 TO-204/197 MJ10016 10 min 40 2.5 0.5 20 10 250 TO-204/197 56 400 BUT33e 20 min 36 3.3 1.6 36 250 TO-204/197 60 200 MJ10020 75/1k min| 15 3.5 0.5 30 250 TO-204/197 250 MJ10021 75/ik min| 15 3.5 0.5 30 250 TO-204/197 Darlington with speed-up diode. TABLE 13 POWER SWITCHING TRANSISTORS VcEO < 200 V Resistive Switching Smpe VCEO(sus) Device Type hee @ Ic a 1s @l Mike rovers Case Max Min NPN PNP Min/Max | Amp | Max Max | Amp | Minj| @ 25C JEDEC/MOT 0.8 40 MPS-U02 MPS-U52 30 min 0.5 150 10 /152 1 120 MPS-U03 40 min 0.1 100 10 /152 180 MPS-U04 40 min 0.1 100 10 /152 2 30 MPS-U01 MPS-U51 50 min 1 50 10 /182 40 MPS-U01A MPS-US5S1A 50 min 1 50 10 /152 MPS-U45# MPS-U95# 4k min 1 100 10 /162 60 MPS-U05 MPS-U5S 60 min | 0.25 50 10 /152 80 MPS-U06 MPS-US56 60 min | 0.25 50 10 /162 100 MPS-U07 MPS-U57 60 min 0.25 50 10 /182 3 40 2N3719 25/180 2 0.4* 1 60 6 TO-205AA/31 2N3867 40/200 2 0.4* 1 60 6 TO-205AA/31 60 2N3720 25/180 2 0.4* 1 60 6 TO-205AA/31 2N3868 30/150 2 0.4* 1 60 6 TO-205AA/31 80 2N6303 30/150 2 0.4* 1 60 6 TO-205AA/31 # Dartington * toff @ 1 MHz (continued) 2-24MOTOROLA 2N3719, 2N3720 m= SEMICONDUCTOR SEE) =2N3867, 2N3868 TECHNICAL DATA 2N6303 SILICON PNP POWER TRANSISTORS . designed for high-speed, medium-current switching and high- 3 AMPERE frequency amplifier applications. POWER TRANSISTORS Collector-Emitter Sustaining Voltage PNP SILICON VCEO{sus) = 40 Vde (Min) 2N3719,2N3867 =60 Vde (Min) 2N3720,2N3868 40,60,80 VOLTS = 80 Vde (Min) 2N6303 6 WATTS @ DC Current Gain hfe =25-180@Ic=1.0 Adc 2N3719,2N3720 = 40-200 @ ic = 1.5 Ade ~ 2N3867 = 30-150 @Ic=1.5 Adc ~ 2N3868,2N6303 Low Collector-Emitter Saturation Voltage VcE(sat) =0.75 Vde @I=1.0 Ade 2N3719,2N3720 Pe =0.75 Vde @ Ic =1.5 Ade 2N3867,2N3868, 2N6303 @ High Current-Gain Bandwidth Product fy = 90 MHz (Typ) @ 2N3867 JAN and 2N3868 JAN also Available *MAXIMUM RATINGS 2N3719 2N3720 Rating Symbol 2N3867 2N3868 2N6303 Unit Coltector-Emitter Voltage VCEO 40 60 80 Vde Collector-Base Voltage Ves 40 60 80 Vde Emitter-Base Voltage Ves 4.0 *| Vde Collector Current Cantinuaus le 3.0 ~____~ Ade Peak 0 Base Current ip 0.5 _____-= Adc Total Device Dissipation @ Tc = 25C PD 6.0 =] watts Derate above 25C . 3 mwiPC su "eearteR ole . PIN 1. EMIT D3p Tata! Device Dissipation @ Ta = 25C Po 1.0 ~]__ Watt 2. BASE Derate above 25C 8.71} mwic deortecton (#12036 000 [tT] a Operating and Storage Junction Temperature Range TaTstg | ~- -65 to +200 -+| C THERMAL CHARACTERISTICS cS _ Ne } Characteristic Symbol Max Unit M Thermal Resistance, Junction to Case A5C 29 cw J Thermal Resistance, Junction to Ambient Osa 175 ciw Indicates JEDEC Registered Data FIGURE 1 POWER DERATING Pp, POWER DISSIPATION (WATTS) 25 50 75 100 125 150 175 200 CASE 79-04 TO-205AD Tc, CASE TEMPERATURE (C) (TO-39) 3-322N3719, 2N3720, 2N3867, 2N3868, 2N6303 *ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted) | Characteristic | __symboi_ | Min [| Max | unit} OFF CHARACTERISTICS Collector-E mitter Sustaining Voltage (1) VcCEO{sus) Vde (Ic = 20 mAdc, Ig = 0) 2N3867 40 - 2N3868 60 - 2N6303 80 - Collector-Base Breakdown Voltage V(BR)CBO Vde (ic = 100 uAdc, tg = 0) 2N3867 40 - 2N3868 60 - 2N6303 80 - Emitter-Base Breakdown Voltage ViBRIEBO Vdc {lg = 100 nAde, Ic = 0) 4.0 - Collector Cutoff Current IcEX uAdc (VceE = Rated Vcg, VBE (off) = 2.0 Vde) - 1.0 Collector Cutoff Current lcBpo wAdc (Vcp = Rated Vcg, Ie = 0, Tc = 150C) - 150 ON CHARACTERISTICS (1) DC Current Gain he ~ (Ig = 500 mAde, VcgE = 1.0 Vdc) 2N3867 50 - 2N 3868, 2N6303 35 - (Ilo = 1.5 Adc, VcE = 2.0 Vde) 2N3867 40 200 2N3868, 2N6303 30 150 (Ic = 2.5 Adc, Voge = 3.0 Vdc} 2N3867 25 - 2N3368, 2N6303 20 ~ (Ic = 3.0 Adc, Voge = 5.0 Vdc) 2N3867 20 - 2N3368, 2N6303 Coilector-Emitter Saturation Voltage VCE (sat) Vde (ic = 500 mAdc, Ig = 50 mAdc} - 0.5 (ic = 1.5 Adc, Ig = 150 mAdc}) 0.75 (Ic = 2.5 Ade, Ig = 250 mAdc} - 1.3 Base-E mitter Saturation Voltage VBE (sat) Vde (Ic = 500 mAdc, Ig = 50 mAdc) - 1.0 (ic = 1.5 Adc, Ig = 150 mAdc) 0.9 1.4 {Ic = 2.5 Ade, Ig = 250 mAdc) - 2.0 DYNAMIC CHARACTERISTICS Current-Gain ~ Bandwidth Product (2) fr MHz {Ic = 100 mAdc, VcE = 5.0 Vdc, fresy = 20 MHz) 60 - Output Capacitance Cob pF (Vcp = 10 Vde, Ie = 0, f = 0.1 MHz) _ 120 Input Capacitance Cib pF (VeEB = 3.0 Vdc, Ic = 0, f = 0.1 MHz) - 1000 SWITCHING CHARACTERISTICS Delay Time (Vcc = 30 Vac, Ve (oft) = 0. td - 35 ns Rise Time I = 1.5 Adc, 1g4 = 150 mAdc) tr = 65 ns Storage Time | (veg = 30 Vdc, t = 1.5 Ade, ts ~ 325 ns Fall Time 1g7 = Iga = 150 mAdc} t 75 ns *Indicates JEDEC Registered Data {t) Pulse Test: Pulse Width & 300 us, Duty Cycle & 2.0%. (2) fr = Inte 1 frost. 3-332N3719, 2N3720, 2N3867, 2N3868, 2N6303 FIGURE 4 THERMAL RESISTANCE 20 cit) = r(t} Osc OJc = 29C AW Max O CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT ty Ty(pk) ~ Te = Pepk} Gsc(t) 4 1 F= aL ne - DUTY CYCLE, D =ty/12 30 50 76 100 200 = 300 500 700 1000 2000 ms) FIGURE 5 ACTIVE REGION SAFE OPERATING AREA 1.0 07 05 4a ZH 03 mh Z 02 Fz ke oO a& = 01 ww 2 2007 = 0.08 22 = & 0.03 SINGLE PULSE 0.02 0.01 02 03 05 0.7 1.0 20 30 50 7.0 10 t, TIME ( 10 sf SAN 5.0 ys 4 ae 5.0 dl = S 50 us {2 ~ = 20 ~ = 5.0 ms spe 0 US+N NI 9 ~ 10 + aN ASA = \ a = = 05 =S X 3 Ty = 200C The SB 0.2 - BONDING WIRE LIMITED Boga Ta THERMALLY LIMITED @ Te = 2500 SUE (SINGLE PULSE) ~ = oosk SECOND BREAKDOWN LIMITED =F Ss 2 C CURVES APPLY BELOW 2 RATED VcEQ 2N3719, 2N3862-4 9.02-- 2N3720, 2N3868 0.01 [2N6303- 1.0 20 30 50 7.0 10 20 30 50 70 100 Vce, COLLECTOR-EMITTER VOLTAGE (VOLTS) FIGURE 6 TURN-OFF TIME 1000 700 Ic/Ig = 10 500 ip = IB2 = 0; 300 Ty = 25C = a 200 wy Bm 2 e = w 100 E : 2 Fe 70 s 50 . os 30 20 0 0.03 0.05 0.07 0.1 02 03 O85 07 10 20 3.0 Ic, COLLECTOR CURRENT (AMP) 3-35 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I -- VceE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure S is based on Tjipk) = 200C; Te is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk)S 200C. T(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. FIGURE 7 CAPACITANCE 1000 700 500 300 200 100 70 50 30 20 10 Qt 0.2 05 1000 2.0 5.0 10 20 Vr, REVERSE VOLTAGE (VOLTS) 50 1002N3719, 2N3720, 2N3867, 2N3868, 2N6303 FIGURE 8 DC CURRENT GAIN s ~ Ty = +150C wn o +25C w 3 -55C hee, OC CURRENT GAIN 2 o a VCE 20 ----- VcE=5.0V 0.05 0.07 0.1 0.5 . . 3.0 Ic, COLLECTOR CURRENT (AMP) FIGURE 10 ON VOLTAGES o @ tc/lp= 10 2 & VCE=2.0V V, VOLTAGE (VOLTS) 2 mn S > @ Ic/lp = 10 0.03 0.05 0.07 0.1 02 03 tc, COLLECTOR CURRENT (AMP) a5 07 10 20 3.0 FIGURE 12 COLLECTOR CUT-OFF REGION 5. ee VcE=30V o mR J = 150C a o ic, COLLECTOR CURRENT QA} So t Sg + an Q -0.1 -0.2 -0.3 -04 Vee, BASE-EMITTER VOLTAGE (VOLTS) FIGURE 9 COLLECTOR SATURATION REGION Vce, COLLECTOR-EMITTER VOLTAGE (VOLTS) 0 2030 50 70 100 200 300 Ig, BASE CURRENT (mA) 500 700 1000 FIGURE 11 TEMPERATURE COEFFICIENTS D Vee = 5.0V tigg < EG ce 5.0 Ty = 55C to + 150C *Ovc for VCE ' 2 wn o Ove for VBE ' en Oy, TEMPERATURE COEFFICIENTS (mV/0C) s o 0.03 0.05 0.07 0.1 02 0.3 o5 07 1.0 20 30 Ic, COLLECTOR CURRENT (AMP) FIGURE 13 BASE CUT-OFF REGION So nh Ty = 150C S = 7 S o> 2 Jg, BASE CURRENT (uA) S n REVERSE 10-3 40.1 0 -0.1 -0.2 0.3 -0.4 Vee, BASE-EMITTER VOLTAGE (VOLTS) 3-36MOTOROLA m= SEMICONDUCTOR Sox TECHNICAL DATA 2N6306 2N6307, 2N6308 HIGH VOLTAGE NPN SILICON POWER TRANSISTORS .. . designed for high voltage inverters, switching requlators and line- operated amplifier applications. Especially well suited for switching power supply applications in associated consumer products. @ High Collector-Base Voltage Veep = 500 Vde 2N6306 = 600 Vde 2N6307 = 700 Vdc 2N6308 @ Excellent DC Current Gain @ I = 3.0 Adc hee = 15 - 75 ~ 2N6306, 2N6307 = 12 -60 2N6308 @ Low Collector-Emitter Saturation Voitage @ Ic = 3.0 Adc VCE(sat) = 0.8 Vde (Max) 2N6306 = 1.0 Vde (Max) 2N6307 = 1.5 Vde (Max) 2N6308 Current Gain Bandwidth Product fr = 5.0 MHz (Min) @ Ic = 0.3 Ade 8 AMPERE POWER TRANSISTORS NPN SILICON 250-300-350 VOLTS 125 WATTS *MAXIMUM RATINGS Rating Symbo! | 2N6306 | 2N6307 } 2N6308 Unit Collector-Base Voltage Voce 500 600 700 Vde Collector-Emitter Voltage VcEO 250 300 350 Vde Emitter-Base Voltage VER _ 8.0 __> Vde Collector Current Continuous le _ 8.0 __ Adc Peak 16 Base Current lg a___ 4,0 __ Adc Tatal Device Dissipation @ To = 25C] = Pp 125 Watts Derate above 25C 0.714 w/ec Operating and Storage Junction Ta.Tstg ~a -65 to +200 % Temperature Range Characteristic Symbol Max Unit Thermal Resistance, Junction to Case 8IC 1.4 [cw (indicates JEDEC Registered Qata. FIGURE 1 ~ POWER DERATING Pg, POWER DISSIPATION (WATTS) Tc, CASE TEMPERATURE (C} STYLE 1 PIN 1. BASE 2 EMITTER CASE COLLECTOR eet I____ SEATING PLANE L. +|<D 2A * (4[ 6013 0.005 F a] 7 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. r MILLIMETERS | INCHES DIM {| MIN | MAX | MIN | MAX = [3937 [| | 1.560 = 4.2108 | = __| 0.830 | 638 [8.25 | 0.250 [ 0.325 il 097 | 1.09 28 | 0,043 | 4.40 i477 | 0.055 | 0.070_ 6 | 0218 BSC __16,898SC__| 1.665 BSC | 1219 | 0.400 ~ 449] 0.151 267 | 5.33 | 0.190 aig | O1ot. CASE 1-06 TO-204A0A (TO-3) 3-181