2N7316D - Harris Semiconductor

November 1994

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures.

SEMICONDUCTOR

2N7316D, 2N7316R

2N7316H

Radiation Hardened

P-Channel Power MOSFETs

Package

TO-204AA

Symbol

Features

• 11A, -100V, RDS(on) = 0.300Ω

• Second Generation Rad Hard MOSFET Results From New Design Concepts

• Gamma - Meets Pre-Rad Speciﬁcations to 100KRAD(Si)

- Deﬁned End Point Specs at 300KRAD(Si) and 1000KRAD(Si)

- Performance Permits Limited Use to 3000KRAD(Si)

• Gamma Dot - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically

- Survives 2E12 Typically If Current Limited to IDM

• Photo Current - 3.0nA Per-RAD(Si)/sec Typically

• Neutron - Pre-RAD Speciﬁcations for 3E13 Neutrons/cm2

- Usable to 3E14 Neutrons/cm2

• Single Event - Typically Survives 1E5ions/cm2Having an

LET ≤35MeV/mg/cm2and a Range ≥ 30µm at 80% BVDSS

Description

The Harris Semiconductor Sector has designed a series of SECOND GENERA-

TION hardened power MOSFETs of both N and P channel enhancement types

with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ.

Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron

hardness ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V prod-

uct. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current lim-

iting and 2E12 with current limiting. Heavy ion survival from signal event drain

burn-out exists for linear energy transfer (LET) of 35 at 80% of rated voltage.

This MOSFET is an enhancement-mode silicon-gate power ﬁeld effect transistor of

the vertical DMOS (VDMOS) structure. It is specially designed and processed to

exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no)

exposures. Design and processing efforts are also directed to enhance survival to

heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.

This part may be supplied as a die or in various packages other than shown above.

Reliability screening is available as either non TX (commercial), TX equivalent of

MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of MIL-S-

19500. Contact the Harris Semiconductor High-Reliability Marketing group for any

desired deviations from the data sheet.

File Number 3241

REGISTRATION PENDING

Currently Available as FRM9140(D, R, H)

Absolute Maximum Ratings (TC = +25oC) Unless Otherwise Speciﬁed

2N7316D, R, H UNITS

Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS -100 V

Drain-Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR -100 V

Continuous Drain Current

TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID 11

Pulsed Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 33 A

Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 V

Maximum Power Dissipation

TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT

TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT

Derated Above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

125

1.0

W/oC

Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM 33 A

Continuous Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS 11 A

Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM 33 A

Operating And Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG -55 to +150 oC

Lead Temperature (During Soldering)

Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300 oC

12-133

Speciﬁcations 2N7316D, 2N7316R, 2N7316H - Registration Pending

Pre-Radiation Electrical Speciﬁcations TC = +25oC, Unless Otherwise Speciﬁed

PARAMETER SYMBOL TEST CONDITIONS

LIMITS

UNITSMIN MAX

Drain-Source Breakdown Volts BVDSS VGS = 0, ID = 1mA -100 - V

Gate-Threshold Volts VGS(th) VDS = VGS, ID = 1mA -2.0 -4.0 V

Gate-Body Leakage Forward IGSSF VGS = -20V - 100 nA

Gate-Body Leakage Reverse IGSSR VGS = +20V - 100 nA

Zero-Gate Voltage

Drain Current IDSS1

IDSS2

IDSS3

VDS = -100V, VGS = 0

VDS = -80V, VGS = 0

VDS = -80V, VGS = 0, TC = +125oC

0.025

0.25 mA

Rated Avalanche Current IAR Time = 20µs - 33 A

Drain-Source On-State Volts VDS(on) VGS = -10V, ID = 11A - -3.47 V

Drain-Source On Resistance RDS(on) VGS = -10V, ID = 7A - 0.300 Ω

Turn-On Delay Time td(on) VDD = -50V, ID = 11A - 64

Rise Time tr Pulse Width = 3µs - 236

Turn-Off Delay Time td(off) Period = 300µs, Rg = 25Ω- 232

Fall Time tf 0 ≤ VGS ≤ 10 (See Test Circuit) - 132

Gate-Charge Threshold QG(th)

VDD = -50V, ID = 11A

IGS1 = IGS2

0≤ VGS ≤ 20

210

ncGate-Charge On State QG(on) 26 104

Gate-Charge Total QGM 53 214

Plateau Voltage VGP -3 -12 V

Gate-Charge Source QGS 7 30 nc

Gate-Charge Drain QGD 9 36

Diode Forward Voltage VSD ID =11A, VGD = 0 -0.6 -1.8 V

Reverse Recovery Time TT I = 11A; di/dt = 100A/µs - TBD ns

Junction-To-Case Rθjc - 1.0 oC/W

Junction-To-Ambient Rθja Free Air Operation - 30

FIGURE 1. SWITCHING TIME TESTING FIGURE 2. CLAMPED INDUCTIVE SWITCHING, ILM

VDD

VDS

DUT

0.06Ω

E1 = 0.5 BVDSS VC = 0.75 BVDSS

12-134

Speciﬁcations 2N7316D, 2N7316R, 2N7316H - Registration Pending

Post-Radiation Electrical Speciﬁcations TC = +25oC, Unless Otherwise Speciﬁed

PARAMETER SYMBOL TYPE TEST CONDITIONS

LIMITS

UNITSMIN MAX

Drain-Source

Breakdown Volts (Note 4, 6) BVDSS 2N7316D, R VGS = 0, ID = 1mA -100 - V

(Note 5, 6) BVDSS 2N7316H VGS = 0, ID = 1mA -95 - V

Gate-Source

Threshold Volts (Note 4, 6) VGS(th) 2N7316D, R VGS = VDS, ID = 1mA -2.0 -4.0 V

(Note 3, 5, 6) VGS(th) 2N7316H VGS = VDS, ID = 1mA -2.0 -6.0 V

Gate-Body

Leakage Forward (Note 4, 6) IGSSF 2N7316D, R VGS = -20V, VDS = 0 - 100 nA

(Note 5, 6) IGSSF 2N7316H VGS = -20V, VDS = 0 - 200 nA

Gate-Body

Leakage Reverse (Note 2, 4, 6) IGSSR 2N7316D, R VGS = 20V, VDS = 0 - 100 nA

(Note 2, 5, 6) IGSSR 2N7316H VGS = 20V, VDS = 0 - 200 nA

Zero-Gate Voltage

Drain Current (Note 4, 6) IDSS 2N7316D, R VGS = 0, VDS = -80V - 25 µA

(Note 5, 6) IDSS 2N7316H VGS = 0, VDS = -80V - 100 µA

Drain-Source

On-State Volts (Note 1, 4, 6) VDS(on) 2N7316D, R VGS = -10V, ID = 11A - -3.47 V

(Note 1, 5, 6) VDS(on) 2N7316H VGS = -16V, ID = 11A - -5.21 V

Drain-Source

On Resistance (Note 1, 4, 6) RDS(on) 2N7316D, R VGS = -10V, ID = 7A - 0.300 Ω

(Note 1, 5, 6) RDS(on) 2N7316H VGS = -14V, ID = 7A - 0.450 Ω

NOTES:

1. Pulse test, 300µs max

2. Absolute value

3. Gamma = 300KRAD(Si)

4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 3E13

5. Gamma = 1000KRAD(Si). Neutron = 3E13

6. Insitu Gamma bias must be sampled for both VGS = -10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS

7. Gamma data taken 5/19/90 on TA 17741 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA,

PA 19401

8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989

9. Neutron derivation, HARRIS Application note AN-8831, Oct. 1988

12-135

2N7316D, 2N7316R, 2N7316H - Registration Pending

Typical Performance Characteristics