T1G2028536-FL 285W, 36V DC - 2 GHz, GaN RF Power Transistor Applications * * * * * * * Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers GPS Communications Avionics Product Features * * * * * Functional Block Diagram Frequency: DC to 2.0 GHz Output Power (P3dB): 260 W at 1.2 GHz Linear Gain: 18 dB at 1.2 GHz Operating Voltage: 36 V Low thermal resistance package General Description Pin Configuration The TriQuint T1G2028536-FL is a 285 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 2 GHz. The device is constructed with TriQuint's proven TQGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Pin No. Label 1 2 Flange VD / RF OUT VG / RF IN Source Lead-free and ROHS compliant Evaluation boards are available upon request. Ordering Information Datasheet: Rev A 11-21-13 (c) 2013 TriQuint Part ECCN Description T1G2028536-FL EAR99 Packaged part Flanged T1G2028536-FLEVB1 EAR99 1.2 - 1.4 GHz Evaluation Board - 1 of 14 - Disclaimer: Subject to change without notice www.triquint.com T1G2028536-FL 285W, 36V DC - 2 GHz, GaN RF Power Transistor Absolute Maximum Ratings Recommended Operating Conditions Parameter Parameter Breakdown Voltage (BVDG) Drain Gate Voltage (VDG) Gate Voltage Range (VG) Drain Current (ID) Gate Current (IG) Power Dissipation (PD) Value RF Input Power, CW, T = 25C (PIN) 47 dBm Channel Temperature (TCH) 275 C Mounting Temperature (30 Seconds) 320 C Storage Temperature Value Drain Voltage (VD) Drain Quiescent Current (IDQ) Peak Drain Current ( ID) Gate Voltage (VG) Channel Temperature (TCH) Power Dissipation, CW (PD) Power Dissipation, Pulse (PD) 145 V (Min.) 48 V -7 to 0 V 24 A -57 to 67 mA 260 W 36 V (Typ.) 576 mA (Typ.) 1.33 A (Typ.) -3.0 V (Typ.) 250 C (Max) 226 W 288 W Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. -40 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. RF Characterization - Load Pull Performance at 1.0 GHz (1) Test conditions unless otherwise noted: TA = 25 C, VD = 36 V, IDQ = 576 mA Symbol Parameter GLIN P3dB DE3dB PAE3dB G3dB Min Linear Gain Output Power at 3 dB Gain Compression Drain Efficiency at 3 dB Gain Compression Power-Added Efficiency at 3 dB Gain Compression Gain at 3 dB Compression Typical Max 20.8 316.0 66.7 65.6 17.8 Units dB W % % dB Notes: 1. VDS = 36 V, IDQ = 576 mA; Pulse: 300s, 10% RF Characterization - Load Pull Performance at 2.0 GHz (1) Test conditions unless otherwise noted: TA = 25 C, VD = 36 V, IDQ = 576 mA Symbol Parameter GLIN P3dB DE3dB PAE3dB G3dB Min Linear Gain Output Power at 3 dB Gain Compression Drain Efficiency at 3 dB Gain Compression Power-Added Efficiency at 3 dB Gain Compression Gain at 3 dB Compression Typical 19.4 268.9 56.3 55.1 16.4 Max Units dB W % % dB Notes: 1. VDS = 36 V, IDQ = 576 mA; Pulse: 300s, 10% Datasheet: Rev A 11-21-13 (c) 2013 TriQuint - 2 of 14 - Disclaimer: Subject to change without notice www.triquint.com T1G2028536-FL 285W, 36V DC - 2 GHz, GaN RF Power Transistor RF Characterization - Performance at 1.2 GHz (1, 2) Test conditions unless otherwise noted: TA = 25 C, VD = 36 V, IDQ = 576 mA Symbol Parameter GLIN P3dB DE3dB G3dB Linear Gain Output Power at 3 dB Gain Compression Drain Efficiency at 3 dB Gain Compression Gain at 3 dB Compression Min Typical 17.0 230.0 49.0 14.0 18.7 264.5 54.0 15.7 Max Units dB W % dB Notes: 1. Performance at 1.2 GHz in the 1.2 to 1.4 GHz Evaluation Board 2. VDS = 36 V, IDQ = 576 mA; Pulse: 300s, 10% RF Characterization - Narrow Band Performance at 1.2 GHz (1) Test conditions unless otherwise noted: TA = 25 C, VD = 36 V, IDQ = 576 mA Symbol Parameter VSWR Typical Impedance Mismatch Ruggedness 10:1 Notes: 1. VDS = 36 V, IDQ = 576 mA, CW at P1dB Datasheet: Rev A 11-21-13 (c) 2013 TriQuint - 3 of 14 - Disclaimer: Subject to change without notice www.triquint.com T1G2028536-FL 285W, 36V DC - 2 GHz, GaN RF Power Transistor Thermal and Reliability Information Parameter Thermal Resistance (JC) Channel Temperature (TCH) Thermal Resistance (JC) Channel Temperature (TCH) Thermal Resistance (JC) Channel Temperature (TCH) Thermal Resistance (JC) Channel Temperature (TCH) Thermal Resistance (JC) Channel Temperature (TCH) Test Conditions Vd = 36V, DC at 85C Case CW Vd = 36 V, DC at 85C Case 100 usec, 10% duty cycle Vd = 32 V, DC at 85C Case 100 usec, 20% duty cycle Vd = 32 V, DC at 85C Case 300 usec, 10% duty cycle Vd = 32 V, DC at 85C Case 300 usec, 20% duty cycle Value Units 0.73 250 0.36 167 0.39 175 0.43 184 0.46 192 C/W C C/W C C/W C C/W C C/W C Notes: Thermal resistance measured to bottom of package Datasheet: Rev A 11-21-13 (c) 2013 TriQuint - 4 of 14 - Disclaimer: Subject to change without notice www.triquint.com T1G2028536-FL 285W, 36V DC - 2 GHz, GaN RF Power Transistor Median Lifetime Maximum Channel Temperature TBASE = 85C, PD = 288 W Maximum Channel Temperature (oC) 320.0 Max. Channel Temperature vs. Pulse Width 300.0 280.0 260.0 240.0 220.0 200.0 180.0 5% Duty Cycle 10% Duty Cycle 160.0 20% Duty Cycle 50% Duty Cycle 140.0 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 Pulse Width (sec) Datasheet: Rev A 11-21-13 (c) 2013 TriQuint - 5 of 14 - Disclaimer: Subject to change without notice www.triquint.com T1G2028536-FL 285W, 36V DC - 2 GHz, GaN RF Power Transistor Load Pull Smith Charts (1, 2) RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances listed follow an optimized trajectory to maintain high power and high efficiency. Notes: 1. Test Conditions: VDS = 36 V, IDQ = 576 mA 2. Test Signal: Pulse Width = 100 sec, Duty Cycle = 20% Datasheet: Rev A 11-21-13 (c) 2013 TriQuint - 6 of 14 - Disclaimer: Subject to change without notice www.triquint.com T1G2028536-FL 285W, 36V DC - 2 GHz, GaN RF Power Transistor Typical Performance Performance is based on compromised impedance point and measured at DUT reference plane. T1G2028536-FL Gain DrEff. and PAE vs. Pout T1G2028536-FL Gain DrEff. and PAE vs. Pout 600 MHz, 300 usec 10%, Vds = 36V, Idq = 576 mA 800 MHz, 300 usec 10%, Vds = 36 V, Idq = 576 mA 80 70 25 70 24 60 24 23 50 ZS = 1.91 + j0.06 Gain [dB] 25 ZL = 1.39 + j0.54 22 40 21 30 Gain DrEff. PAE 20 19 18 40 42 44 46 48 50 52 20 ZL = 1.48 + j1.01 22 40 21 30 Gain DrEff. PAE 19 0 56 18 40 42 44 46 48 50 52 20 10 54 0 56 Pout [dBm] Pout [dBm] T1G2028536-FL Gain DrEff. and PAE vs. Pout T1G2028536-FL Gain DrEff. and PAE vs. Pout 1000 MHz, 300 usec 10%, Vds = 36V, Idq = 576 mA 1500 MHz, 300 usec 10%, Vds = 36V, Idq = 576 mA 22 80 21 70 21 70 20 60 20 60 ZS = 1.58 - j2.24 19 50 ZL = 1.40 + j0.26 18 40 17 30 Gain DrEff. PAE 16 15 14 40 42 44 46 48 50 52 20 10 54 Gain [dB] 80 19 ZS = 9.73 - j2.20 50 18 ZL = 1.47 - j0.15 40 17 30 Gain DrEff. PAE 16 15 0 56 14 40 Pout [dBm] 42 44 46 48 50 52 20 DrEff. & PAE [%] 22 DrEff. & PAE [%] Gain [dB] 50 ZS = 0.84 - j0.48 20 10 54 60 23 DrEff. & PAE [%] 26 DrEff. & PAE [%] 80 Gain [dB] 26 10 54 0 56 Pout [dBm] T1G2028536-FL Gain DrEff. and PAE vs. Pout 2000 MHz, 300 usec 10%, Vds = 36V, Idq = 576 mA 22 21 Gain [dB] 70 ZL = 1.48 - j1.02 60 19 50 18 40 17 30 Gain DrEff. PAE 16 15 14 40 42 44 46 48 50 52 20 DrEff. & PAE [%] 20 80 ZS = 1.42 + j1.35 10 54 0 56 Pout [dBm] Datasheet: Rev A 11-21-13 (c) 2013 TriQuint - 7 of 14 - Disclaimer: Subject to change without notice www.triquint.com T1G2028536-FL 285W, 36V DC - 2 GHz, GaN RF Power Transistor Performance Over Temperature (1, 2) Performance measured in TriQuint's 1.2 GHz to 1.4 GHz Evaluation Board at 3 dB compression. Notes: 1. Test Conditions: VDS = 36 V, IDQ = 576 mA 2. Test Signal: Pulse Width = 300 s, Duty Cycle = 10% Datasheet: Rev A 11-21-13 (c) 2013 TriQuint - 8 of 14 - Disclaimer: Subject to change without notice www.triquint.com T1G2028536-FL 285W, 36V DC - 2 GHz, GaN RF Power Transistor Evaluation Board Performance (1, 2) Performance at 3 dB Compression Notes: 1. Test Conditions: VDS = 36 V, IDQ = 576 mA 2. Test Signal: Pulse Width = 300 s, Duty Cycle = 10 % Application Circuit Bias-up Procedure Bias-down Procedure Set gate voltage (VG) to -5.0V Set drain voltage (VD) to 36 V Turn off RF signal Slowly increase VG until quiescent ID is 576 mA. Turn off VD and wait 1 second to allow drain capacitor dissipation Apply RF signal Turn off VG Datasheet: Rev A 11-21-13 (c) 2013 TriQuint - 9 of 14 - Disclaimer: Subject to change without notice www.triquint.com T1G2028536-FL 285W, 36V DC - 2 GHz, GaN RF Power Transistor Evaluation Board Layout Top RF layer is 0.020" thick Rogers RO4350, r = 3.48. The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances. Bill of Materials Reference Design Value C1, C2, C7, C8, C9, C10 27 pF C3, C5 3.9 pF C4, C6 4.7 pF C11, C12, C13, C14 2400 pF C15, C16, C17, C18 100 pF C19, C20, C21, C22 0.01 uF C23, C24, C25, C26 1 uF C27 330 uF R1, R2, R3 12.1 ohms R4, R5 1000 ohms Datasheet: Rev A 11-21-13 (c) 2013 TriQuint Qty Manufacturer Part Number 6 2 2 4 4 4 4 1 3 2 ATC ATC ATC Murata ATC Kemet Allied Cornell Dubilier Vishay Dale Vishay Dale 600S270FW250XT 600S3R9AW250XT 600S4R7AW250XT C08BL242X-5UN-X0T 600S101FW250XT C1206C103KRAC7800 18121C105KAT2A AFK337M2AR44T-F CRCW120612R1FKTA CRCW12061K00FKTA - 10 of 14 - Disclaimer: Subject to change without notice www.triquint.com T1G2028536-FL 285W, 36V DC - 2 GHz, GaN RF Power Transistor Pin Layout Note: The T1G2028536-FL will be marked with the "T1G2028536-FL" designator and a lot code marked below the part designator. The "YY" represents the last two digits of the calendar year the part was manufactured, the "WW" is the work week of the assembly lot start, the "MXXX" is the production lot number, and the "ZZZ" is an auto-generated serial number. Pin Description Pin Symbol Description 1 VD / RF OUT Drain voltage / RF Output matched to 50 ohms; see EVB Layout on page 10 as an example. 2 VG / RF IN Gate voltage / RF Input matched to 50 ohms; see EVB Layout on page 10 as an example. 3 Flange Source connected to ground; see EVB Layout on page 10 as an example. Notes: Thermal resistance measured to bottom of package Datasheet: Rev A 11-21-13 (c) 2013 TriQuint - 11 of 14 - Disclaimer: Subject to change without notice www.triquint.com T1G2028536-FL 285W, 36V DC - 2 GHz, GaN RF Power Transistor Mechanical Information All dimensions are in millimeters. Note: This package is lead-free/RoHS-compliant. The plating material on the leads is NiAu. It is compatible with both lead-free (maximum 260 C reflow temperature) and tin-lead (maximum 245C reflow temperature) soldering processes. Datasheet: Rev A 11-21-13 (c) 2013 TriQuint - 12 of 14 - Disclaimer: Subject to change without notice www.triquint.com T1G2028536-FL T1G2028536 285W, 36V DC - 2 GHz, GaN RF Power Transistor Product Compliance Information ESD Sensitivity Ratings Caution! ESD-Sensitive Device Solderability Compatible with the latest version of J-STD-020, J Lead free solder, 260 C RoHs Compliance ESD Rating: Value: Test: Standard: TBD TBD Human Body Model (HBM) JEDEC Standard JESD22-A114 A114 This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes: * Lead Free * Halogen Free (Chlorine, Bromine) MSL Rating * Antimony Free * TBBP-A (C15H12Br402) Free Level 3 at +260 C convection reflow * PFOS Free The part is rated Moisture Sensitivity Level 3 at 260C per * SVHC Free JEDEC standard IPC/JEDEC J-STD-020. ECCN US Department of Commerce EAR99 Recommended Soldering Temperature Profile Datasheet: Rev A 11-21-13 (c) 2013 TriQuint - 13 of 14 - Disclaimer: Subject to change without notice www.triquint.com T1G2028536-FL 285W, 36V DC - 2 GHz, GaN RF Power Transistor Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Email: info-sales@triquint.com Tel: Fax: For technical questions and application information: +1.972.994.8465 +1.972.994.8504 Email: info-products@triquint.com Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or lifesustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Datasheet: Rev A 11-21-13 (c) 2013 TriQuint - 14 of 14 - Disclaimer: Subject to change without notice www.triquint.com Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Qorvo: T1G2028536-FL/FS 1.2-1.4GHz EVB5 TriQuint: T1G2028536-FL T1G2028536-FL/FS Eval