Si4425BDY New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) D TrenchFETr Power MOSFET D Advanced High Cell Density Process rDS(on) (W) ID (A) 0.012 @ VGS = -10 V -1 1.4 APPLICATIONS 0.019 @ VGS = -4.5 V - 9.1 D Load Switches - Notebook PCs - Desktop PCs -30 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS -30 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C) _ a TA = 25_C V - 11.4 -8.8 - 9.1 -7.0 ID TA = 70_C Pulsed Drain Current IDM continuous Source Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa Unit TA = 70_C Operating Junction and Storage Temperature Range PD A -50 -2.1 -1.3 2.5 1.5 1.6 0.9 TJ, Tstg W _C -55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Steady State Steady State RthJA RthJF Typical Maximum 40 50 70 85 15 18 Unit _C/W C/W Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72000 S-21862--Rev. B, 21-Oct-02 www.vishay.com 1 Si4425BDY New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = -250 mA -1.0 Typ Max Unit -3.0 V "100 nA Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea VDS = 0 V, VGS = "20 V Diode Forward Voltagea -1 VDS = -24 V, VGS = 0 V, TJ = 55_C -5 VDS v -5 V, VGS = -10 V rDS(on) Forward Transconductancea VDS = -24 V, VGS = 0 V m mA -50 A VGS = -10 V, ID = -11.4 A 0.010 0.012 VGS = -4.5 V, ID = -9.1 A 0.015 0.019 gfs VDS = -15 V, ID = -11.4 A 29 VSD IS = -2.5 A, VGS = 0 V -0.8 -1.2 64 100 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs VDS = -15 V, VGS = -10 V, ID = -11.4 A 11 Gate-Drain Charge Qgd 17 Turn-On Delay Time td(on) 15 Rise Time tr Turn-Off Delay Time VDD = -15 V, RL = 15 W ID ^ -1 A, VGEN = -10 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC 25 13 20 100 150 53 80 41 80 IF = -2.5 A, di/dt = 100 A/ms ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 50 50 VGS = 10 thru 5 V 40 4V I D - Drain Current (A) I D - Drain Current (A) 40 30 20 10 30 20 TC = 125_C 10 25_C 3V 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) www.vishay.com 2 -55 _C 0 5 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Document Number: 72000 S-21862--Rev. B, 21-Oct-02 Si4425BDY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 5000 0.020 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 0.025 VGS = 4.5 V 0.015 VGS = 10 V 0.010 4000 Ciss 3000 2000 Coss 1000 0.005 Crss 0.000 0 0 10 20 30 40 50 0 6 ID - Drain Current (A) Gate Charge 24 30 On-Resistance vs. Junction Temperature 1.6 VDS = 15 V ID = 12 A r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 18 VDS - Drain-to-Source Voltage (V) 10 8 6 4 2 VGS = 10 V ID = 12 A 1.4 1.2 1.0 0.8 0 0 10 20 30 40 50 60 70 0.6 -50 80 -25 0 Qg - Total Gate Charge (nC) Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.05 r DS(on) - On-Resistance ( W ) TJ = 150_C 10 TJ = 25_C 1 0.0 25 TJ - Junction Temperature (_C) 50 I S - Source Current (A) 12 0.04 ID = 12 A 0.03 0.02 0.01 0.00 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Document Number: 72000 S-21862--Rev. B, 21-Oct-02 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 Si4425BDY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Single Pulse Power, Junction-to-Ambient 30 0.6 25 ID = 250 mA 20 0.4 Power (W) V GS(th) Variance (V) Threshold Voltage 0.8 0.2 15 0.0 10 -0.2 5 -0.4 -50 -25 0 25 50 75 100 125 0 10- 2 150 10- 1 TJ - Temperature (_C) 1 10 100 600 Time (sec) Safe Operating Area 100 rDS(on) Limited IDM Limited P(t) = 0.0001 I D - Drain Current (A) 10 P(t) = 0.001 P(t) = 0.01 1 ID(on) Limited P(t) = 0.1 P(t) = 1 0.1 TA = 25_C Single Pulse P(t) = 10 dc BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 70_C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 www.vishay.com 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72000 S-21862--Rev. B, 21-Oct-02 Si4425BDY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 Document Number: 72000 S-21862--Rev. B, 21-Oct-02 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5