DIM500BSS06-S000 DIM500BSS06-S000 Single Switch IGBT Module DS5677-1.3 February 2004 FEATURES KEY PARAMETERS n - Channel VCES High Switching Speed VCE(sat)* (typ) Low Forward Voltage Drop Isolated Base IC (max) 500A IC(PK) (max) 1000A APPLICATIONS PWM Motor Control UPS The Powerline range of modules includes half bridge, chopper, bi-directional, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 3600A. The DIM500BSS06-S000 is a single switch 600V n channel enhancement mode insulated gate bipolar transistor (IGBT) module. The module is suitable for a variety of medium voltage applications in motor drives and power conversion. The IGBT has a wide reverse bias safe operating area (RBSOA) for ultimate reliability in demanding applications. 600V 2.1V *(measured at the power busbars and not the auxiliary terminals) 1(C) 2(E) 5(E1) 3(G1) 4(C1) Fig. 1 Single switch circuit diagram These modules incorporate electrically isolated base plates and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety. Typical applications include dc motor drives, ac pwm drivesand ups systems. ORDERING INFORMATION Order as: DIM500BSS06-S000 Note: When ordering, use complete part number. Outline type code: B (See package details for further information) Fig. 2 Module outline Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1/9 DIM500BSS06-S000 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25C unless stated otherwise Symbol Test Conditions Parameter VCES Collector-emitter voltage VGES Gate-emitter voltage VGE = 0V - Max. Units 600 V 20 V Continuous collector current Tcase = 65C 500 A IC(PK) Peak collector current 1ms, Tcase = 95C 1000 A Pmax Max. transistor power dissipation Tcase = 25C, Tj = 150C 2907 W Diode I2t value VR = 0, tp = 10ms, Tvj = 125C TBD kA2s Isolation voltage - per module Commoned terminals to base plate. AC RMS, 1 min, 50Hz 2.5 kV IC I2t Visol 2/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM500BSS06-S000 THERMAL AND MECHANICAL RATINGS Internal insulation: Baseplate material: Creepage distance: Al2O3 Cu 20mm Thermal resistance - transistor 425 Test Conditions Parameter Symbol Rth(j-c) Clearance: 11mm CTI (Critical Tracking Index): Continuous dissipation - Min. Typ. Max. Units - - 43 C/kW - - 81 C/kW - - 15 C/kW junction to case Rth(j-c) Thermal resistance - diode Continuous dissipation junction to case Rth(c-h) Tj Tstg - Thermal resistance - case to heatsink Mounting torque 5Nm (per module) (with mounting grease) Junction temperature Transistor - - 150 C Diode - - 125 C -40 - 125 C 3 - 5 Nm Electrical connections - M3 2.5 - 5 Nm Electrical connections - M4 1.1 2 Nm Storage temperature range Screw torque Mounting - M6 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 3/9 DIM500BSS06-S000 ELECTRICAL CHARACTERISTICS Tcase = 25C unless stated otherwise. Min. Typ. Max. Units VGE = 0V, VCE = VCES - - 3 mA VGE = 0V, VCE = VCES, Tcase = 125C - - 15 mA Gate leakage current VGE = 20V, VCE = 0V - - 3 A VGE(TH) Gate threshold voltage IC = 20mA, VGE = VCE 4.5 5.5 7.5 V VCE(sat) Collector-emitter saturation voltage VGE = 15V, IC = 375A - 2.1 2.6 V VGE = 15V, IC = 375A, , Tcase = 125C - 2.3 2.8 V Symbol ICES IGES Test Conditions Parameter Collector cut-off current IF Diode forward current DC - - 500 A IFM Diode maximum forward current tp = 1ms - - 1000 A VF Diode forward voltage IF = 50A - 1.5 1.8 V IF = 500A, Tcase = 125C - 1.5 1.8 V VCE = 25V, VGE = 0V, f = 1MHz - 54 - nF - nH Cies Input capacitance LM Module inductance - - 20 Internal transistor resistance - per arm - - 0.23 RINT m Note: Measured at the power busbars and not the auxiliary terminals. L* is the circuit inductance + LM 4/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM500BSS06-S000 ELECTRICAL CHARACTERISTICS Tcase = 25C unless stated otherwise Min. Typ. Max. Units IC = 500A - 600 - ns Fall time VGE = 15V - 250 - ns EOFF Turn-off energy loss VCE = 300V - 45 - mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 4.7 - 490 - ns L ~ 100nH - 150 - ns Parameter Symbol td(off) tf tr Turn-off delay time Rise time Test Conditions EON Turn-on energy loss - 30 - mJ Qg Gate charge - 4 - C Qrr Diode reverse recovery charge IF = 500A, VR = 300V, - 30 - C Irr Diode reverse current dIF/dt = 2800A/s - 240 - A - 9 - mJ Min. Typ. Max. Units - 650 - ns EREC Diode reverse recovery energy Tcase = 125C unless stated otherwise Parameter Symbol td(off) Turn-off delay time Test Conditions IC = 500A Fall time VGE = 15V - 500 - ns EOFF Turn-off energy loss VCE = 300V - 65 - mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 4.7 - 550 - ns L ~ 100nH - 150 - ns - 50 - mJ IF = 500A, VR = 300V, - 40 - C dIF/dt = 2800A/s - 265 - A - 10 - mJ tf tr Rise time EON Turn-on energy loss Qrr Diode reverse recovery charge Irr Diode reverse current EREC Diode reverse recovery energy Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 5/9 DIM500BSS06-S000 TYPICAL CHARACTERISTICS 1000 900 800 1000 Common emitter Tcase = 25C Vce is measured at power busbars and not the auxiliary terminals Common emitter Tcase = 125C 900 V is measured at power ce busbars and not the 800 auxiliary terminals Collector current, Ic - (A) Collector current, Ic - (A) 700 600 500 400 300 700 600 500 400 300 200 200 VGE = 10V VGE = 12V VGE = 15V VGE = 20V 100 0 0 1 2.0 3 4 Collector-emitter voltage, Vce - (V) VGE = 10V VGE = 12V VGE = 15V VGE = 20V 100 0 0 5 1.0 Fig.3 Typical output characteristics Eon Eoff Erec 5.0 6.0 70 70 60 Switching energy, Esw - (mJ) Switching energy, Esw - (mJ) 4.0 80 Conditions: Tcase = 125C 80 Vcc = 300V Rg = 4.7 ohms 60 50 40 30 50 40 Conditions: Tcase = 125C 30 V = 300V cc IC = 500A Eon Eoff Erec 20 20 10 10 0 100 200 300 400 Collector current, IC - (A) 500 600 Fig.4 Typical switching energy vs collector current 6/9 3.0 Fig.4 Typical output characteristics 90 0 0 2.0 Collector-emitter voltage, Vce - (V) 4 5 6 7 9 10 11 12 13 8 Gate resistance, Rg - Ohms 14 15 16 Fig.5 Typical switching energy vs gate resistance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM500BSS06-S000 1000 1200 VF is measured at power busbars and not the auxiliary terminals 900 1100 1000 Tj = 25C Tj = 125C 800 900 Collector current, IC - (A) Foward current, IF - (A) 700 600 500 400 300 800 700 600 500 400 300 200 200 100 0 100 0 0.5 2.0 1.0 1.5 Foward voltage, VF - (V) 2.5 Tj = 125C Vge = 15V Rg = 4.7 Ohms Module IC Chip IC 0 0 3.0 600 200 400 Collector-emitter voltage, Vce - (V) 800 Fig.7 Reverse bias safe operating area Fig.6 Diode typical forward characteristics 400 1000 Tj = 125C Transistor Diode Transient thermal impedance, Zth (j-c) - (C/kW ) Reverse recovery current, Irr - (A) 350 300 250 200 150 100 100 10 IGBT 50 Diode 0 0 100 200 300 400 500 Reverse voltage, VR - (V) 600 Fig.7 Diode reverse bias safe operating area 700 1 0.001 Ri (C/KW) i (ms) Ri (C/KW) i (ms) 0.01 1 2 3 1.2705 5.0322 6.8123 0.1069 4.363 21.9182 2.3216 12.9104 12.0804 0.0895 2.6571 17.3886 0.1 Pulse width, tp - (s) 10 Fig.8 Transient thermal impedance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1 4 40.8577 92.4022 73.9553 71.8108 7/9 DIM500BSS06-S000 PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 1(C) 2(E) 5(E1) 3(G1) 4(C1) Nominal weight: 475g Module outline type code: B Fig. 15 Package details 8/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 SALES OFFICES Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19. France: Tel: +33 (0)2 47 55 75 53. Fax: +33 (0)2 47 55 75 59. Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 North America: Tel: (440) 259-2060. Fax: (440) 259-2059. Tel: (949) 733-3005. Fax: (949) 733-2986. These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRODUCED IN UNITED KINGDOM This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. www.dynexsemi.com