IRFI9634G - Vishay [Siliconix]

Document Number: 91168 www.vishay.com

S09-0062-Rev. A, 02-Feb-09 1

Power MOSFET

IRFI9634G, SiHFI9634G

Vishay Siliconix

FEATURES

• Advanced Process Technology

• Dynamic dV/dt Rating

• 150 °C Operating Temperature

• Fast Switching

• P-Channel

• Fully Avalanche Rated

• Lead (Pb)-free Available

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional

insulating hardware in commercial-industrial applications.

The moulding compound used provides a high isolation

capability and a low thermal resistance between the tab and

external heatsink. This isolation is equivalent to using a 100

micron mica barrier with standard TO-220 product. The

FULLPAK is mounted to a heatsink using a single clip or by

a single screw fixing.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting TJ = 25 °C, L = 62 mH, RG = 25 Ω, IAS = - 4.1 A (see fig. 12).

c. ISD ≤ - 4.1 A, dI/dt ≤ - 640 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.

d. 1.6 mm from case.

PRODUCT SUMMARY

VDS (V) - 250

RDS(on) (Ω)V

GS = - 10 V 1.0

Qg (Max.) (nC) 38

Qgs (nC) 8.0

Qgd (nC) 18

Configuration Single

P-Channel MOSFET

TO-220 FULLPAK

ORDERING INFORMATION

Package TO-220 FULLPAK

Lead (Pb)-free IRFI9634GPbF

SiHFI9634G-E3

SnPb IRFI9634G

SiHFI9634G

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage VDS - 250 V

Gate-Source Voltage VGS ± 20

Continuous Drain Current VGS at - 10 V TC = 25 °C ID

- 4.1

TC = 100 °C - 2.6

Pulsed Drain CurrentaIDM - 16

Linear Derating Factor 0.28 W/°C

Single Pulse Avalanche EnergybEAS 520 mJ

Repetitive Avalanche CurrentaIAR - 4.1 A

Repetitive Avalanche EnergyaEAR 3.5 mJ

Maximum Power Dissipation TC = 25 °C PD35 W

Peak Diode Recovery dV/dtcdV/dt - 5.0 V/ns

Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C

Soldering Recommendations (Peak Temperature) for 10 s 300d

Mounting Torque 6-32 or M3 screw 10 lbf · in

1.1 N · m

* Pb containing terminations are not RoHS compliant, exemptions may apply

www.vishay.com Document Number: 91168

2S09-0062-Rev. A, 02-Feb-09

IRFI9634G, SiHFI9634G

Vishay Siliconix

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient RthJA -65

°C/W

Maximum Junction-to-Case (Drain) RthJC -3.6

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA - 250 - - V

VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - - 0.27 - V/°C

Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA - 2.0 - - 4.0 V

Gate-Source Leakage IGSS V

GS = ± 20 V - - ± 100 nA

Zero Gate Voltage Drain Current IDSS

VDS = - 250 V, VGS = 0 V - - - 25 µA

VDS = - 200 V, VGS = 0 V, TJ = 150 °C - - - 250

Drain-Source On-State Resistance RDS(on) V

GS = - 10 V ID = - 2.5 Ab--1.0Ω

Forward Transconductance gfs VDS = - 50 V, ID = - 4.1 Ab2.2 - - S

Dynamic

Input Capacitance Ciss VGS = 0 V,

VDS = - 25 V,

f = 1.0 MHz, see fig. 5

- 680 -

Output Capacitance Coss - 170 -

Reverse Transfer Capacitance Crss -40-

Drain to Sink Capacitance C f = 1.0 MHz - 12 -

Total Gate Charge Qg

VGS = - 10 V ID = - 4.1 A, VDS = - 200 V,

see fig. 6 and 13b

--38

nC Gate-Source Charge Qgs --8.0

Gate-Drain Charge Qgd --18

Turn-On Delay Time td(on)

VDD = - 130 V, ID = - 4.1 A,

RG = 12 Ω, RD= 31 Ω,

see fig. 10b

-12-

Rise Time tr -23-

Turn-Off Delay Time td(off) -34-

Fall Time tf -21-

Internal Drain Inductance LD Between lead,

6 mm (0.25") from

package and center of

die contact

-4.5-

Internal Source Inductance LS-7.5-

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current ISMOSFET symbol

showing the

integral reverse

p - n junction diode

--- 4.1

Pulsed Diode Forward CurrentaISM --- 16

Body Diode Voltage VSD TJ = 25 °C, IS = - 4.1 A, VGS = 0 Vb--- 6.5V

Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = - 4.1 A, dI/dt = -100 A/µsb- 190 290 ns

Body Diode Reverse Recovery Charge Qrr -1.52.2µC

Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Document Number: 91168 www.vishay.com

S09-0062-Rev. A, 02-Feb-09 3

IRFI9634G, SiHFI9634G

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, T C= 150 °C

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

www.vishay.com Document Number: 91168

4S09-0062-Rev. A, 02-Feb-09

IRFI9634G, SiHFI9634G

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

Document Number: 91168 www.vishay.com

S09-0062-Rev. A, 02-Feb-09 5

IRFI9634G, SiHFI9634G

Vishay Siliconix

Fig. 9 - Maximum Drain Current vs. Case Temperature

Fig. 10a - Switching Time Test Circuit

Fig. 10b - Switching Time Waveforms

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

VGS

D.U.T.

- 10 V

VDS

VDD

VGS

10 %

90 %

VDS

td(on) trtd(off) tf

IAS

0.01 Ω

D.U.T.

VDS

VDD

- 20 V

Driver

15 V

IAS

VDS

www.vishay.com Document Number: 91168

6S09-0062-Rev. A, 02-Feb-09

IRFI9634G, SiHFI9634G

Vishay Siliconix

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit

QGS QGD

Charge

- 10 V

D.U.T.

- 3 mA

VGS

VDS

IGID

0.3 µF

0.2 µF

50 kΩ

12 V

Current regulator

Current sampling resistors

Same type as D.U.T.

Document Number: 91168 www.vishay.com

S09-0062-Rev. A, 02-Feb-09 7

IRFI9634G, SiHFI9634G

Vishay Siliconix

Fig. 14 - For P-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see www.vishay.com/ppg?91168.

P.W.Period

dI/dt

Diode recovery

dV/dt

Ripple ≤5 %

Body diode forward drop

Re-applied

voltage

Reverse

recovery

current

Body diode forward

current

= - 10 V*

Driver gate drive

D.U.T. I

waveform

D.U.T. V

waveform

Inductor current

D = P.W.

Period

* VGS = - 5 V for logic level and - 3 V drive devices

Peak Diode Recovery dV/dt Test Circuit

VDD

• dV/dt controlled by RG

• ISD controlled by duty factor "D"

• D.U.T. - device under test

D.U.T.

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

Compliment N-Channel of D.U.T. for driver

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Revision: 12-Mar-12 1Document Number: 91000

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