SIEMENS BoR 116W NPN Silicon Digital Transistor * Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (Ry=4.7kQ, Ro=47kQ) VS005561 Type Marking |Ordering Code =| Pin Configuration Package BCR 116W WGs UPON INQUIRY |1=B 2 =E 3=C SOT-323 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VoEO 50 Vv Collector-base voltage Voso 50 Emitter-base voltage Veso 5 Input on Voitage Vicon) 15 DC collector current Io 100 mA Total power dissipation, Ts = 124C Prot 250 mw Junction temperature 7; 150 C Storage temperature Tetg - 65... + 150 Thermal Resistance Junction ambient = Rihua $240 KAW Junction - soldering point Rings $105 1) Package mounted on peb 40mm x 40mm x 1.5mm / 0.5em? Cu Semiconductor Group 599 11.96 SIEMENS BCR 116W Electrical Characteristics at 7,=25C, unless otherwise specified Parameter Symboi Values Unit min. _|typ. |max. DC Characteristics Collector-emitter breakdown voltage Vieryceo Vv Io = 100 pA, Ig = 0 50 - - Collector-base breakdown voltage Vipr)cBo Ig = 10 PA, fg = 0 50 - - Collector cutoff current loo nA Vop = 40 V, fe =0 - - 100 Emitter cutoff current leso pA Ven =5V, lo =0 - - 155 DC current gain tre - Ic=5 mA, Vog =5V 70 - - Collector-emitter saturation voltage 1) | Voesat Vv Io = 10 MA, Ip = 0.5 mA - - 0.3 Input off voltage Viot Io = 100 PA, Vog = 5 V 0.4 - 0.8 Input on Voltage Vion) Io =2 MA, Vog = 0.3V 0.5 - 1.4 input resistor R, 3.2 47 6.2 kQ Resistor ratio Fiy/Re 0.09 0.1 0.11 - AC Characteristics Transition frequency fr ~ |MHz lo = 10 MA, Veg = 5 V, f= 100 MHz - 160 - Collector-base capacitance Cob pF Vop = 10 V, f= 1 MHz - 3 - 1) Pulse test: t < 300us; D < 2% Semiconductor Group 600 11.96 SIEMENS BCR 116W DC Current Gain hee = f (ic) Collector-Emitter Saturation Voitage Vee = 5V (common emitter configuration) Veesat = Mc), hee = 20 103 102 Mee | 102 101 10# 10 10 10 10 10 mA 0.0 0.2 04 0.6 v 1.0 ~ & > Voce Input on Voltage Vion) = Alc) Input off voitage Viot) = Alc) Voce = 0.3V (common emitter configuration) Voce = 5V (common emitter configuration) 102 t 101 10 107 10 > Mon) Vom Semiconductor Group 601 11.96 SIEMENS BCR 116W Total power dissipation Pio, = f (Ta*; Ts) * Package mounted on epoxy mw | \\ iL \ G0 20 40 60 80 100 120 C_150 tm Tals Permissible Pulse Load Ainus = {(ip) Permissible Pulse Load Pigtmax / Protoc = Kip) 103 CCT WT COT Tn TT SM TU rt Tra a yy a HA Li rr So re Semiconductor Group 602 11.96