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FGA6530WDF 650 V, 30 A Field Stop Trench IGBT Features General Description * Maximum Junction Temperature : TJ = 175oC Using novel field stop IGBT technology, Fairchild's new series of field stop 3rd generation IGBTs offer the optimum performance for welder and industial applications where low conduction and switching losses are essential. * Positive Temperaure Co-efficient for Easy Parallel Operating * High Current Capability * Low Saturation Voltage: VCE(sat) = 1.8 V(Typ.) @ IC = 30 A * 100% of the Parts Tested for ILM(1) Applications * High Input Impedance * Welder and Industrial Application * Fast Switching * Power Factor Correction * Tighten Parameter Distribution * RoHS Compliant C G G C TO-3PN E Absolute Maximum Ratings T C Symbol VCES VGES E = 25C unless otherwise noted Description FGA6530WDF Unit Collector to Emitter Voltage 650 V Gate to Emitter Voltage 20 V 30 V Collector Current @ TC = 25oC 60 A Collector Current @ TC = 100oC 30 A ILM (1) Pulsed Collector Current @ TC = 25oC 90 A ICM (2) Pulsed Collector Current IC IF IFM PD Transient Gate to Emitter Voltage 90 A Diode Forward Current @ TC = 25oC 30 A Diode Forward Current o 15 A 60 A W @ TC = 100 C Pulsed Diode Maximum Forward Current o Maximum Power Dissipation @ TC = 25 C 176 Maximum Power Dissipation @ TC = 100oC 88 W TJ Operating Junction Temperature -55 to +175 o Tstg Storage Temperature Range -55 to +175 o C TL Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds 300 o C C Notes: 1. VCC = 400 V, VGE = 15 V, IC = 90 A, RG = 55.9 Inductive Load 2. Repetitive rating: Pulse width limited by max. junction temperature (c)2015 Fairchild Semiconductor Corporation FGA6530WDF Rev. 1.1 1 www.fairchildsemi.com FGA6530WDF -- 650 V, 30 A Field Stop Trench IGBT August 2015 Symbol Parameter FGA6530WDF Unit o RJC(IGBT) Thermal Resistance, Junction to Case, Max. 0.85 RJC(Diode) Thermal Resistance, Junction to Case, Max. 3.5 oC/W C/W RJA Thermal Resistance, Junction to Ambient, Max. 40 oC/W Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FGA6530WDF FGA6530WDF TO-3PN Tube - - 30 Electrical Characteristics of the IGBT Symbol Parameter TC = 25C unless otherwise noted Test Conditions Min. Typ. Max. Unit 650 - - V - 0.52 - V/oC Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA BVCES TJ Temperature Coefficient of Breakdown Voltage ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 A IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - 400 nA IC = 30 mA, VCE = VGE IC = 1 mA, Reference to 25oC On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage 4.1 5.6 7.6 V IC = 30 A, VGE = 15 V - 1.8 2.3 V IC = 30 A, VGE = 15 V, TC = 175oC - 2.4 - V - 1072 - pF VCE = 30 V, VGE = 0 V, f = 1MHz - 36 - pF - 13 - pF - 12 - ns Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Rise Time - 19.2 - ns td(off) Turn-Off Delay Time - 42.4 - ns tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss - 162 - uJ Ets Total Switching Loss - 1122 - uJ td(on) Turn-On Delay Time - 12.8 - ns tr Rise Time - 27.2 - ns td(off) Turn-Off Delay Time tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss Ets Total Switching Loss (c)2015 Fairchild Semiconductor Corporation FGA6530WDF Rev. 1.1 VCC = 400 V, IC = 30 A, RG = 6 , VGE = 15 V, Inductive Load, TC = 25oC VCC = 400 V, IC = 30 A, RG = 6 , VGE = 15 V, Inductive Load, TC = 175oC 2 - 7.2 - ns - 960 - uJ - 46.4 - ns - 12.8 - ns - 1430 - uJ - 310 - uJ - 1740 - uJ www.fairchildsemi.com FGA6530WDF -- 650 V, 30 A Field Stop Trench IGBT Thermal Characteristics Symbol Parameter Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge Test Conditions VCE = 400 V, IC = 30 A, VGE = 15 V Electrical Characteristics of the Diode Symbol Parameter VFM Diode Forward Voltage Erec Reverse Recovery Energy trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge (c)2015 Fairchild Semiconductor Corporation FGA6530WDF Rev. 1.1 (Continued) Min. Typ. Max Unit - 37.4 - nC - 7.2 - nC - 15 - nC Unit TC = 25C unless otherwise noted Test Conditions IF = 15 A IF = 15 A, dIF/dt = 200 A/s 3 Min. Typ. Max TC = 25oC - 1.7 2.6 TC = 175oC - 1.62 - TC = 175oC - 76 - TC = 25oC - 81 - TC = 175oC - 257 - TC = 25oC - 254 - TC = 175oC - 1189 - V uJ ns nC www.fairchildsemi.com FGA6530WDF -- 650 V, 30 A Field Stop Trench IGBT Electrical Characteristics of the IGBT Figure 1. Typical Output Characteristics 90 10V 60 45 VGE = 8V 45 0 1 2 3 4 5 Collector-Emitter Voltage, VCE [V] 0 6 Common Emitter VGE = 15V o TC = 25 C o TC = 175 C 60 45 30 15 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] 5 Common Emitter VGE = 15V 3 60A 30A 2 IC = 15A Figure 6. Saturation Voltage vs. VGE 20 Common Emitter Common Emitter o o Collector-Emitter Voltage, VCE [V] TC = 25 C 16 12 IC = 15A 8 30A 60A 4 4 8 12 16 Gate-Emitter Voltage, VGE [V] (c)2015 Fairchild Semiconductor Corporation FGA6530WDF Rev. 1.1 6 1 -100 -50 0 50 100 150 200 o Collector-Emitter Case Temperature, TC [ C] Figure 5. Saturation Voltage vs. VGE 20 1 2 3 4 5 Collector-Emitter Voltage, VCE [V] Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level Collector-Emitter Voltage, VCE [V] Collector Current, IC [A] 0 4 75 Collector-Emitter Voltage, VCE [V] VGE = 8V 30 90 0 10V 15 Figure 3. Typical Saturation Voltage Characteristics 0 12V 60 15 0 15V 75 12V 30 20V o TC = 175 C 15V Collector Current, IC [A] Collector Current, IC [A] 90 20V o TC = 25 C 75 Figure 2. Typical Output Characteristics TC = 175 C 16 12 30A 8 IC = 15A 4 0 20 4 60A 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGA6530WDF -- 650 V, 30 A Field Stop Trench IGBT Typical Performance Characteristics Figure 7. Capacitance Characteristics Figure 8. Gate charge Characteristics 15 10000 Common Emitter Gate-Emitter Voltage, VGE [V] Capacitance [pF] o Cies 1000 100 Coes Common Emitter VGE = 0V, f = 1MHz o 300V 9 10 Collector-Emitter Voltage, VCE [V] 3 30 Figure 9. Turn-on Characteristics vs. Gate Resistance 0 8 16 24 Gate Charge, Qg [nC] 40 1000 td(on) 10 Switching Time [ns] tr Switching Time [ns] 32 Figure 10. Turn-off Characteristics vs. Gate Resistance 100 Common Emitter VCC = 400V, VGE = 15V IC = 30A td(off) 100 tf Common Emitter VCC = 400V, VGE = 15V IC = 30A 10 o TC = 25 C o TC = 25 C o TC = 175 C o TC = 175 C 5 400V 6 0 1 VCC = 200V Cres TC = 25 C 10 TC = 25 C 12 1 0 10 20 30 40 50 60 Gate Resistance, RG [] 70 80 Figure 11. Switching Loss vs. Gate Resistance 0 10 20 30 40 50 60 Gate Resistance, RG [] 70 80 Figure 12. Turn-on Characteristics vs. Collector Current 300 5000 Switching Time [ns] Switching Loss [uJ] 100 Eon 1000 Eoff Common Emitter VCC = 400V, VGE = 15V IC = 30A 10 td(on) Common Emitter VGE = 15V, RG = 6 o o TC = 25 C TC = 25 C 100 o o TC = 175 C TC = 175 C 50 tr 0 10 20 30 40 50 60 Gate Resistance, RG [] (c)2015 Fairchild Semiconductor Corporation FGA6530WDF Rev. 1.1 1 70 80 0 15 30 45 60 75 90 Collector Current, IC [A] 5 www.fairchildsemi.com FGA6530WDF -- 650 V, 30 A Field Stop Trench IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Collector Current Figure 14. Switching Loss vs. Collector Current 10000 300 Eon 100 10 Switching Loss [uJ] Switching Time [ns] td(off) tf Common Emitter VGE = 15V, RG = 6 1000 Eoff 100 Common Emitter VGE = 15V, RG = 6 o TC = 25 C o TC = 25 C o TC = 175 C o 1 TC = 175 C 0 15 30 45 60 Collector Current, IC [A] 10 75 90 0 15 30 45 60 75 90 Collector Current, IC [A] Figure 15. Load Current Vs. Frequency Figure 16. SOA Characteristics 100 150 Square Wave o 10s VGE = 15/0V, RG = 6 Collector Current, Ic [A] Collector Current, [A] TJ <= 175 C, D = 0.5, VCE = 400V 100 o TC = 25 C o TC = 75 C 50 o TC = 100 C 100s 10 1ms 10 ms DC 1 *Notes: o 1. TC = 25 C o 2. TJ = 175 C 3. Single Pulse 0 1k 0.1 10k 100k Switching Frequency, f[Hz] 1M Figure 17. Forward Characteristics 10 100 Collector-Emitter Voltage, VCE [V] 12 Reverse Recovery Currnet, Irr [A] o TC = 175 C 10 o TC = 75 C o o TC = 25 C TC = 25 C o TC = 75 C di/dt = 200A/s 9 di/dt = 200A/s 6 di/dt = 100A/s di/dt = 100A/s 3 o TC = 25 C o TC = 175 C --- o 1 1000 Figure 18. Reverse Recovery Current 90 Forward Current, IF [A] 1 TC = 175 C 0 1 2 3 4 Forward Voltage, VF [V] (c)2015 Fairchild Semiconductor Corporation FGA6530WDF Rev. 1.1 0 5 6 0 10 20 30 40 50 60 Forward Current, IF [A] 70 80 www.fairchildsemi.com FGA6530WDF -- 650 V, 30 A Field Stop Trench IGBT Typical Performance Characteristics Figure 19. Reverse Recovery Time 500 Figure 20. Stored Charge 2500 o Stored Recovery Charge, Qrr [nC] Reverse Recovery Time, trr [ns] TC = 25 C o TC = 175 C - - - 400 300 di/dt = 100A/s di/dt = 200A/s 200 100 0 0 10 20 30 40 50 60 Forward Current, IF [A] 70 o TC = 25 C o TC = 175 C - - - 2000 1500 di/dt = 200A/s 1000 di/dt = 100A/s 500 0 80 0 10 20 30 40 50 60 Forward Current, IF [A] 70 80 Figure 21.Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1 0.5 0.2 0.1 0.1 0.05 PDM 0.02 t1 0.01 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC single pulse 0.01 -5 10 -4 10 -3 -2 10 -1 10 10 0 10 Rectangular Pulse Duration [sec] Figure 22.Transient Thermal Impedance of Diode Thermal Response [Zthjc] 4 0.5 1 0.2 0.1 0.05 0.1 0.02 PDM 0.01 t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC single pulse 0.01 -5 10 -4 10 -3 -2 10 10 -1 10 0 10 Rectangular Pulse Duration [sec] (c)2015 Fairchild Semiconductor Corporation FGA6530WDF Rev. 1.1 7 www.fairchildsemi.com FGA6530WDF -- 650 V, 30 A Field Stop Trench IGBT Typical Performance Characteristics 5.00 4.60 1.65 1.45 16.20 15.40 5.20 4.80 13.80 13.40 3.30 3.10 R0.50 3 20.10 19.70 16.96 16.56 18.90 18.50 3 1 3 3.70 3.30 1.85 2.20 1.80 3.20 2.80 2.00 1.60 4 2.60 2.20 20.30 19.70 1.20 0.80 0.55 M 5.45 R0.50 0.75 0.55 5.45 NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE CONFORMS TO EIAJ SC-65 PACKAGING STANDARD. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSION AND TOLERANCING PER ASME14.5-2009. D) DIMENSIONS ARE EXCLUSSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSSIONS. E) DRAWING FILE NAME: TO3PN03AREV2. F) FAIRCHILD SEMICONDUCTOR. 7.20 6.80 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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