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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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©2015 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
FGA6530WDF Rev. 1.1
FGA6530WDF — 650 V, 30 A Field Stop Trench IGBT
August 2015
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Notes:
1. VCC = 400 V, VGE = 15 V, IC = 90 A, RG = 55.9 Inductive Load
2. Repetitive rating: Pulse width limited by max. junction temperature
Symbol Description FGA6530WDF Unit
VCES Collector to Emitter Voltage 650 V
VGES
Gate to Emitter Voltage 20 V
Transient Gate to Emitter Voltage 30 V
IC
Collector Current @ TC = 25oC60 A
Collector Current @ TC = 100oC30 A
ILM (1) Pulsed Collector Current @ TC = 25oC 90 A
ICM (2) Pulsed Collector Current 90 A
IF
Diode Forward Current @ TC = 25oC30 A
Diode Forward Current @ TC = 100oC15 A
IFM Pulsed Diode Maximum Forward Current 60 A
PD
Maximum Power Dissipation @ TC = 25oC176 W
Maximum Power Dissipation @ TC = 100oC88 W
TJ Operating Junction Temperature -55 to +175 oC
Tstg Storage Temperature Range -55 to +175 oC
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds 300 oC
G
E
C
TO-3PN
GCE
FGA6530WDF
650 V, 30 A Field Stop Trench IGBT
Features
• Maximum Junction Temperature : TJ = 175oC
• Positive Temperaure Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.8 V(Typ.) @ IC = 30 A
• 100% of the Parts Tested for ILM(1)
• High Input Impedance
• Fast Switching
• Tighten Parameter Distribution
•RoHS Compliant
General Description
Using novel field stop IGBT technology, Fairchild’s new series of
field stop 3rd generation IGBTs offer the optimum performance
for welder and industial applications where low conduction and
switching losses are essential.
Applications
• Welder and Industrial Application
• Power Factor Correction
FGA6530WDF — 650 V, 30 A Field Stop Trench IGBT
©2015 Fairchild Semiconductor Corporation 2www.fairchildsemi.com
FGA6530WDF Rev. 1.1
Thermal Characteristics
Package Marking and Ordering Information
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol Parameter FGA6530WDF Unit
RJC(IGBT) Thermal Resistance, Junction to Case, Max. 0.85 oC/W
RJC(Diode) Thermal Resistance, Junction to Case, Max. 3.5 oC/W
RJA Thermal Resistance, Junction to Ambient, Max. 40 oC/W
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FGA6530WDF FGA6530WDF TO-3PN Tube - - 30
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Off Characteristics
BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA 650 - - V
BVCES
TJ
Temperature Coefficient of Breakdown
Voltage IC = 1 mA, Reference to 25oC-0.52-V/
oC
ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 A
IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±400 nA
On Characteristics
VGE(th) G-E Threshold Voltage IC = 30 mA, VCE = VGE 4.1 5.6 7.6 V
VCE(sat) Collector to Emitter Saturation Voltage
IC = 30 A, VGE = 15 V -1.82.3V
IC = 30 A, VGE = 15 V,
TC = 175oC-2.4- V
Dynamic Characteristics
Cies Input Capacitance
VCE = 30 V, VGE = 0 V,
f = 1MHz
- 1072 - pF
Coes Output Capacitance - 36 - pF
Cres Reverse Transfer Capacitance - 13 - pF
Switching Characteristics
td(on) Turn-On Delay Time
VCC = 400 V, IC = 30 A,
RG = 6 , VGE = 15 V,
Inductive Load, TC = 25oC
-12- ns
trRise Time - 19.2 - ns
td(off) Turn-Off Delay Time - 42.4 - ns
tfFall Time - 7.2 - ns
Eon Turn-On Switching Loss - 960 - uJ
Eoff Turn-Off Switching Loss - 162 - uJ
Ets Total Switching Loss - 1122 - uJ
td(on) Turn-On Delay Time
VCC = 400 V, IC = 30 A,
RG = 6 , VGE = 15 V,
Inductive Load, TC = 175oC
-12.8- ns
trRise Time - 27.2 - ns
td(off) Turn-Off Delay Time - 46.4 - ns
tfFall Time - 12.8 - ns
Eon Turn-On Switching Loss - 1430 - uJ
Eoff Turn-Off Switching Loss - 310 - uJ
Ets Total Switching Loss - 1740 - uJ
FGA6530WDF — 650 V, 30 A Field Stop Trench IGBT
©2015 Fairchild Semiconductor Corporation 3www.fairchildsemi.com
FGA6530WDF Rev. 1.1
Electrical Characteristics of the IGBT (Continued)
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max Unit
QgTotal Gate Charge
VCE = 400 V, IC = 30 A,
VGE = 15 V
- 37.4 - nC
Qge Gate to Emitter Charge - 7.2 - nC
Qgc Gate to Collector Charge - 15 - nC
Symbol Parameter Test Conditions Min. Typ. Max Unit
VFM Diode Forward Voltage IF = 15 A TC = 25oC- 1.7 2.6V
TC = 175oC - 1.62 -
Erec Reverse Recovery Energy
IF = 15 A, dIF/dt = 200 A/s
TC = 175oC- 76 - uJ
trr Diode Reverse Recovery Time TC = 25oC- 81 - ns
TC = 175oC - 257 -
Qrr Diode Reverse Recovery Charge TC = 25oC - 254 - nC
TC = 175oC - 1189 -
FGA6530WDF — 650 V, 30 A Field Stop Trench IGBT
©2015 Fairchild Semiconductor Corporation 4www.fairchildsemi.com
FGA6530WDF Rev. 1.1
Typical Performance Characteristics
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage Figure 4. Saturation Voltage vs. Case
Characteristics Temperature at Variant Current Level
Figure 5. Saturation Voltage vs. VGE Figure 6. Saturation Voltage vs. VGE
0123456
0
15
30
45
60
75
90 20V
TC = 25oC
15V
12V
10V
VGE = 8V
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
0123456
0
15
30
45
60
75
90 20V
TC = 175oC
15V
12V 10V
VGE = 8V
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
012345
0
15
30
45
60
75
90
Common Emitter
VGE = 15V
TC = 25oC
TC = 175oC
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
-100 -50 0 50 100 150 200
1
2
3
4
60A
30A
IC = 15A
Common Emitter
VGE = 15V
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Case Temperature, TC [oC]
4 8 12 16 20
0
4
8
12
16
20
IC = 15A 30A
60A
Common Emitter
TC = 25oC
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage, VGE [V]
4 8 12 16 20
0
4
8
12
16
20
60A
IC = 15A
30A
Common Emitter
TC = 175oC
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage, VGE [V]
FGA6530WDF — 650 V, 30 A Field Stop Trench IGBT
©2015 Fairchild Semiconductor Corporation 5www.fairchildsemi.com
FGA6530WDF Rev. 1.1
Typical Performance Characteristics
Figure 7. Capacitance Characteristics Figure 8. Gate charge Characteristics
Figure 9. Turn-on Characteristics vs. Figure 10. Turn-off Characteristics vs.
Gate Resistance Gate Resistance
Figure 11. Switching Loss vs. Figure 12. Turn-on Characteristics vs.
Gate Resistance Collector Current
110
10
100
1000
10000
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oCCres
Coes
Cies
Capacitance [pF]
Collector-Emitter Voltage, VCE [V]
30
0 8 16 24 32 40
0
3
6
9
12
15
Common Emitter
TC = 25oC
300V
400V
VCC = 200V
Gate-Emitter Voltage, VGE [V]
Gate Charge, Qg [nC]
0 1020304050607080
5
10
100
Common Emitter
VCC = 400V, VGE = 15V
IC = 30A
TC = 25oC
TC = 175oC
td(on)
tr
Switching Time [ns]
Gate Resistance, RG []
0 1020304050607080
1
10
100
1000
Common Emitter
VCC = 400V, VGE = 15V
IC = 30A
TC = 25oC
TC = 175oC
td(off)
tf
Switching Time [ns]
Gate Resistance, RG []
0 1020304050607080
50
100
1000
5000
Common Emitter
VCC = 400V, VGE = 15V
IC = 30A
TC = 25oC
TC = 175oC
Eon
Eoff
Switching Loss [uJ]
Gate Resistance, RG []
0 153045607590
1
10
100
300
Common Emitter
VGE = 15V, RG = 6
TC = 25oC
TC = 175oC
tr
td(on)
Switching Time [ns]
Collector Current, IC [A]
FGA6530WDF — 650 V, 30 A Field Stop Trench IGBT
©2015 Fairchild Semiconductor Corporation 6www.fairchildsemi.com
FGA6530WDF Rev. 1.1
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs. Figure 14. Switching Loss vs.
Collector Current Collector Current
F i g u r e 1 5 . L o a d C u r r e n t V s . F r e q u e n c y F i g u r e 1 6 . S O A C h a r a c t e r i s t i c s
F ig u r e 17 . F o rw a r d Ch ar a c t er i st ic s F ig ur e 18 . R e ve rs e Re co v e r y C ur r e n t
0 153045607590
1
10
100
300
Common Emitter
VGE = 15V, RG = 6
TC = 25oC
TC = 175oC
td(off)
tf
Switching Time [ns]
Collector Current, IC [A]
0 153045607590
10
100
1000
10000
Common Emitter
VGE = 15V, RG = 6
TC = 25oC
TC = 175oC
Eon
Eoff
Switching Loss [uJ]
Collector Current, IC [A]
1k 10k 100k 1M
0
50
100
150
TC = 75oC
TC = 25oC
TC = 100oC
Square Wave
TJ <= 175oC, D = 0.5, VCE = 400V
VGE = 15/0V, RG = 6
Collector Current, [A]
Switching Frequency, f[Hz]
1 10 100 1000
0.1
1
10
100
DC
1ms
10 ms
*Notes:
1. TC = 25oC
2. TJ = 175oC
3. Single Pulse
10s
100s
Collector Current, Ic [A]
Collector-Emitter Voltage, VCE [V]
012345
1
10
90
TC = 75oC
TC = 25oC
TC = 25oC
TC = 75oC
TC = 175oC
TC = 175oC
Forward Voltage, VF [V]
Forward Current, IF [A]
0 1020304050607080
0
3
6
9
12
TC = 25oC
TC = 175oC ---
di/dt = 100A/s
di/dt = 200A/s
di/dt = 100A/s
di/dt = 200A/s
Reverse Recovery Currnet, Irr [A]
Forward Current, IF [A]
FGA6530WDF — 650 V, 30 A Field Stop Trench IGBT
©2015 Fairchild Semiconductor Corporation 7www.fairchildsemi.com
FGA6530WDF Rev. 1.1
Typical Performance Characteristics
Figure 19. Reverse Recovery Time Figure 20. Stored Charge
Figure 21.Transient Thermal Impedance of IGBT
Figure 22.Transient Thermal Impedance of Diode
0 1020304050607080
0
100
200
300
400
500
TC = 25oC
TC = 175oC - - -
di/dt = 200A/s
di/dt = 100A/s
Reverse Recovery Time, trr [ns]
Forward Current, IF [A]
0 1020304050607080
0
500
1000
1500
2000
2500
TC = 25oC
TC = 175oC - - -
di/dt = 200A/s
di/dt = 100A/s
Stored Recovery Charge, Qrr [nC]
Forward Current, I
F
[A]
10-5 10-4 10-3 10-2 10-1 100
0.01
0.1
1
0.01
0.02
0.1
0.05
0.2
single pulse
Thermal Response [Zthjc]
Rectangular Pulse Duration [sec]
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.5
t
1
P
DM
t
2
10-5 10-4 10-3 10-2 10-1 100
0.01
0.1
1
4
0.01
0.02
0.1
0.05
0.2
single pulse
Thermal Response [Zthjc]
Rectangular Pulse Duration [sec]
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.5
t
1
P
DM
t
2
R
0.50
16.20
15.40
5.20
4.80
20.10
19.70
2.20
1.80
3.70
3.30
3.20
2.80
1.20
0.80
5.45 5.45
18.90
18.50
1.85
0.55
M
1.65
1.45
R
0.50
5.00
4.60
2.60
2.20
0.75
0.55
2.00
1.60
3° 4°
3°
3.30
3.10
7.20
6.80
13.80
13.40
16.96
16.56
20.30
19.70
NOTES: UNLESS OTHERWISE SPECIFIED
A) THIS PACKAGE CONFORMS TO EIAJ
SC-65 PACKAGING STANDARD.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSION AND TOLERANCING PER
ASME14.5-2009.
D) DIMENSIONS ARE EXCLUSSIVE OF BURRS,
MOLD FLASH, AND TIE BAR EXTRUSSIONS.
E) DRAWING FILE NAME:
TO3PN03AREV2.
F) FAIRCHILD SEMICONDUCTOR.
13
www.onsemi.com
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
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designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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