BFR193E6327XT - Infineon Technologies AG

2007-03-30

BFR193

NPN Silicon RF Transistor*

• For low noise, high-gain amplifiers up to 2 GHz

• For linear broadband amplifiers

• fT = 8 GHz, F = 1 dB at 900 MHz

• Pb-free (RoHS compliant) package1)

• Qualified according AEC Q101

* Short term description

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type Marking Pin Configuration Package

BFR193 RCs 1 = B 2 = E 3 = C SOT23

Maximum Ratings

Parameter Symbol Value Unit

Collector-emitter voltage VCEO 12 V

Collector-emitter voltage VCES 20

Collector-base voltage VCBO 20

Emitter-base voltage VEBO 2

Collector current IC80 mA

Base current IB10

Total power dissipation2)

TS ≤ 69°C Ptot 580 mW

Junction temperature T

150 °C

Ambient temperature T

-65 ... 150

Storage temperature Tst

-65 ... 150

Thermal Resistance

Parameter Symbol Value Unit

Junction - soldering point3) RthJS ≤ 140 K/W

1Pb-containing package may be available upon special request

2TS is measured on the collector lead at the soldering point to the pcb

3For calculation of RthJA please refer to Application Note Thermal Resistance

2007-03-30

BFR193

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0 V(BR)CEO 12 - - V

Collector-emitter cutoff current

VCE = 20 V, VBE = 0 ICES - - 100 µA

Collector-base cutoff current

VCB = 10 V, IE = 0 ICBO - - 100 nA

Emitter-base cutoff current

VEB = 1 V, IC = 0 IEBO - - 1 µA

DC current gain-

IC = 30 mA, VCE = 8 V, pulse measured hFE 70 100 140 -

2007-03-30

BFR193

Electrical Characteristics at T

= 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

AC Characteristics (verified by random sampling)

Transition frequency

IC = 50 mA, VCE = 8 V, f = 500 MHz fT6 8 - GHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz, VBE = 0 ,

emitter grounded

Ccb - 0.66 1 pF

Collector emitter capacitance

VCE = 10 V, f = 1 MHz, VBE = 0 ,

base grounded

Cce - 0.28 -

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz, VCB = 0 ,

collector grounded

Ceb - 2.25 -

Noise figure

IC = 10 mA, VCE = 8 V, ZS = ZSopt ,

f = 900 MHz

IC = 10 mA, VCE = 8 V, ZS = ZSopt ,

f = 1.8 GHz

1.6

Power gain, maximum available1)

IC = 30 mA, VCE = 8 V, ZS = ZSopt ,

ZL = ZLopt , f = 900 MHz

IC = 30 mA, VCE = 8 V, ZS = ZSopt ,

ZL = ZLopt , f = 1.8 GHz

Gma

Transducer gain

IC = 30 mA, VCE = 8 V, ZS = ZL = 50Ω ,

f = 900 MHz

IC = 30 mA, VCE = 8 V, ZS = ZL = 50Ω ,

f = 1.8 GHz

|S21e|2

7.5

1Gma = |S21 / S12| (k-(k²-1)1/2)

2007-03-30

BFR193

SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):

Transistor Chip Data:

NF = 0.95341 -

ISE = 10.627 fA

NR = 1.4289 -

ISC = 0.037409 fA

IRB = 0.91763 mA

RC = 0.11938 Ω

MJE = 0.48654 -

VTF = 0.8 V

CJC = 935.03 fF

XCJC = 0.053563 -

VJS = 0.75 V

EG = 1.11 eV

TNOM 300 K

BF = 125 -

IKF = 0.26949 A

BR = 14.267 -

IKR = 0.037925 A

RB = 1.8368 Ω

RE = 0.76534 -

VJE = 0.70276 V

XTF = 0.69477 -

PTF = 0 deg

MJC = 0.30002 -

CJS = 0 fF

NK = 0 -

FC = 0.72063

IS = 0.2738 fA

VAF = 24 V

NE = 1.935 -

VAR = 3.8742 V

NC = 0.94371 -

RBM = 1Ω

CJE = 1.1824 fF

TF = 18.828 ps

ITF = 0.96893 mA

VJC = 1.1828 V

TR = 1.0037 ns

MJS = 0-

XTI = 3-

All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by:

Institut für Mobil- und Satellitentechnik (IMST)

Package Equivalent Circuit: LBI = 0.85 nH

LBO = 0.51 nH

LEI = 0.69 nH

LEO = 0.61 nH

LCI = 0nH

LCO = 0.43 nH

CBE = 73 fF

CCB =84 fF

E = 165 fF

For examples and ready to use parameters

please contact your local Infineon Technologies

distributor or sales office to obtain a Infineon

Technologies CD-ROM or see Internet:

http://www.infineon.com

Valid up to 6GHz

2007-03-30

BFR193

Total power dissipation Ptot = ƒ(TS)

0 20 40 60 80 100 120 °C 150

100

200

300

400

600

Ptot

Permissible Pulse Load RthJS = ƒ(tp)

10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0

K/W

RthJS

0.5

0.2

0.1

0.05

0.02

0.01

0.005

D = 0

Permissible Pulse Load

Ptotmax/PtotDC = ƒ(tp)

10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0

Ptotmax/PtotDC

D = 0

0.005

0.01

0.02

0.05

0.1

0.2

0.5

2007-03-30

BFR193

Package SOT23

Package Outline

Foot Print

Marking Layout (Example)

Standard Packing

Reel ø180 mm = 3.000 Pieces/Reel

Reel ø330 mm = 10.000 Pieces/Reel

BCW66

Type code

Pin 1

0.8

0.9 0.91.3

0.8 1.2

0.25 MBC

1.9

-0.05

+0.1

0.4

±0.1

2.9

0.95

0...8˚

0.2 A

0.1 MAX.

10˚ MAX.

0.08...0.15

1.3

±0.1

10˚ MAX.

2.4

±0.15

±0.1

0.15 MIN.

1) Lead width can be 0.6 max. in dambar area

3.15

2.65

2.13

0.9

0.2

1.15

Pin 1

Manufacturer

2005, June

Date code (YM)

2007-03-30

BFR193

Edition 2006-02-01

Published by

Infineon Technologies AG

81726 München, Germany

Attention please!

The information given in this dokument shall in no event be regarded as a guarantee

of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any

examples or hints given herein, any typical values stated herein and/or any information

regarding the application of the device, Infineon Technologies hereby disclaims any

and all warranties and liabilities of any kind, including without limitation warranties of

non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices

please contact your nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements components may contain dangerous substances.

For information on the types in question please contact your nearest

Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or

systems with the express written approval of Infineon Technologies, if a failure of

such components can reasonably be expected to cause the failure of that

life-support device or system, or to affect the safety or effectiveness of that

device or system.

Life support devices or systems are intended to be implanted in the human body,

or to support and/or maintain and sustain and/or protect human life. If they fail,

it is reasonable to assume that the health of the user or other persons

may be endangered.