DSS20201L
Document number: DS31605 Rev. 2 - 2 1 of 5
www.diodes.com December 2008
© Diodes Incorporated
DSS20201L
NEW PRODUCT
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
Features
• Ideal for Medium Power Amplification and Switching
• Complementary PNP Type Available (DSS20200L)
• Ultra Low Collector-Emitter Saturation Voltage
• Lead Free By Design/RoHS Compliant (Note 1)
• “Green” Device (Note 2)
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic, "Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish — Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.008 grams (approximate)
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 20 V
Collector-Emitter Voltage VCEO 20 V
Emitter-Base Voltage VEBO 6 V
Peak Pulse Current ICM 4 A
Continuous Collector Current IC 2 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ TA = 25°C PD 600 mW
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C R
θ
JA 209 °C/W
Power Dissipation (Note 4) @ TA = 25°C PD 1.2 mW
Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C R
θ
JA 104 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index .php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Device mounted on FR-4 PCB with 1 inch2 copper pad layout.
Top View Device Schematic
E
B
C
DSS20201L
Document number: DS31605 Rev. 2 - 2 2 of 5
www.diodes.com December 2008
© Diodes Incorporated
DSS20201L
NEW PRODUCT
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Conditions
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage V
(
BR
)
CBO 20 ⎯ ⎯ V IC = 100μA
Collector-Emitter Breakdown Voltage (Note 5) V
(
BR
)
CEO 20 ⎯ ⎯ V IC = 10mA
Emitter-Base Breakdown Voltage V
(
BR
)
EBO 6 ⎯ ⎯ V IE = 100μA
Collector-Base Cutoff Current ICBO ⎯ ⎯ 100 nA VCB = 20V, IE = 0
Emitter-Base Cutoff Current IEBO ⎯ ⎯ 100 nA
VEB = 6V, IC = 0
ON CHARACTERISTICS (Note 5)
DC Current Gain hFE
200 ⎯ ⎯
⎯
VCE = 2V, IC = 10mA
200 330 ⎯ VCE = 2V, IC = 500mA
200 ⎯ ⎯ V
CE = 2V, IC = 1A
200 ⎯ ⎯ V
CE = 2V, IC = 2A
Collector-Emitter Saturation Voltage VCE(SAT)
⎯ ⎯ 10
mV
IC = 0.1A, IB = 10mA
⎯ 40 50 IC = 1.0A, IB = 100mA
⎯ 75 90 IC = 1.0A, IB = 10mA
⎯ 70 100 IC = 2.0A, IB = 200mA
Equivalent On-Resistance RCE
(
SAT
)
⎯ 35 50
mΩ IE = 2A, IB = 200mA
Base-Emitter Saturation Voltage VBE
(
SAT
)
⎯ ⎯ 0.9 V
IC = 1A, IB = 10mA
Base-Emitter Turn-on Voltage VBE
(
ON
)
⎯ ⎯ 0.9 V
VCE = 2V, IC = 1A
SMALL SIGNAL CHARACTERISTICS
Transition Frequency fT 150 ⎯ ⎯ MHz VCE = 5V, IC = 100mA,
f = 100MHz
Output Capacitance Cobo ⎯ ⎯ 45 pF
VCB = 3V, f = 1MHz
Input Capacitance Cibo ⎯ ⎯ 450 pF
VEB = 0.5V, f = 1MHz
SWITCHING CHARACTERISTICS
Turn-On Time ton ⎯ ⎯ 200 ns
VCC = 15V, IC = 750mA,
IB1 = 15mA
Delay Time td ⎯ ⎯ 100 ns
Rise Time t
r
⎯ ⎯ 100 ns
Turn-Off Time toff ⎯ ⎯ 610 ns
VCC = 15V, IC = 750mA,
IB1 = IB2 = 15mA
Storage Time ts ⎯ ⎯ 500 ns
Fall Time tf ⎯ ⎯ 110 ns
Notes: 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
00
P , POWER DISSIPATION (W)
D
T , AMBIENT TEMPERA TURE ( C)
A
°
(Note 3)
Fig . 1 Pow er D issipation vs. Ambien t Tem per at ur e
0.2
25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
(Note 4)
0.1 1 10 100
V , COLLECTOR -EM I TTER VOLTAGE ( V)
CE
Fig. 2 Typical Collector Current
vs. Collector-Emitter Vo ltage
0.001
0.01
0.1
1
10
I,
LLE
E
(A)
C
DC
Pw = 100ms
Pw = 10ms
DSS20201L
Document number: DS31605 Rev. 2 - 2 3 of 5
www.diodes.com December 2008
© Diodes Incorporated
DSS20201L
NEW PRODUCT
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
012345
0
V , COLLECTOR- EMIT TER VOLTAGE (V)
CE
Fig. 3 Typical Collector Current
vs. Collector-Emitter V oltage
I,
LLE
EN
(A )
C
I = 1mA
B
I = 2mA
B
I = 3mA
B
I = 4mA
B
I = 5mA
B
1 10 100 1,000 10,000
I , COLLECTOR CURRENT (mA)
C
Fig. 4 Typical DC Current Gain vs. Collector Current
10
100
1,000
h, D
EN
AIN
FE
T = 150°C
A
T = 25°C
A
T = -55°C
A
T = 85°C
A
V = 2V
CE
1 10 100 1,000 10,000
I , COLLECTOR CURRENT (mA)
C
Fig. 5 Typical Collector-Emitter Saturation Voltage
vs. C ollect or Curr ent
0.001
0.01
0.1
1
V,
LLE
-EMI
E
SATURA TION
CE(SAT)
VOLTAGE (V)
I/I = 10
CB
T = 85°C
A
T = 25°C
A
T = -55°C
A
T = 150°C
A
1 10 100 1,000 10,000
I , COLLECTOR CURRENT (mA)
C
Fig. 6 T y pical Base-Emitter Tu rn-On Voltage
vs. Col lector Current
0
0.2
0.4
0.6
0.8
1.0
1.2
V , BASE -EM I
T
T
E
R
T
U
R
N-
O
N V
O
L
T
A
G
E (V)
BE(ON)
T = 150°C
A
T = 25° C
A
T = -55°C
A
T = 85° C
A
V = 2V
CE
1 10 100 1,000 10,000
I , COLLECTOR CURRENT (mA)
C
Fig. 7 T y pical Base-Emitter Saturation Vo ltage
vs. Col lector Cu r re nt
0
0.2
0.4
0.6
0.8
1.0
1.
2
V , BASE-EMI
E
SA
A
I
N V
L
A
E (V)
BE(SAT)
T = 150°C
A
T = 25°C
A
T = -55°C
A
T = 85°C
A
I = 10
CB
/I
0.1 1 10 100
V , REVERSE VOL TAGE (V)
R
Fig. 8 Typical Capacitance Characteristics
1
10
100
1,000
C
A
P
A
C
I
T
A
N
C
E (p
F
)
C
ibo
C
obo
f = 1MHz
DSS20201L
Document number: DS31605 Rev. 2 - 2 4 of 5
www.diodes.com December 2008
© Diodes Incorporated
DSS20201L
NEW PRODUCT
Fig. 9 Typi cal Gain-Ban dwi dth Pr oduct
vs. Col lector Cu rre nt
0102030405060708090100
I , COLLECTOR CURRENT (mA)
C
1
10
100
1,000
f,
AIN-BANDWID
D
(M
z)
T
V = 2V
f = 100MHz
CE
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
Fig. 10 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.001
0.01
0.1
1
r(t),
ANSIEN
E
MAL
ESIS
AN
E
T - T = P * R (t)
Duty Cycle, D = t /t
JA JA
12
θ
R (t) = r(t) *
θ
JA
R
R = 168°C/W
θ
θ
JA
JA
P(pk) t
1
t
2
D = 0.7
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.5
Ordering Information (Note 6)
Part Number Case Packaging
DSS20201L-7 SOT-23 3000/Tape & Reel
Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Date Code Key
Year 2008 2009 2010 2011 2012 2013 2014 2015
Code V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
ZN1 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
ZN1
YM
DSS20201L
Document number: DS31605 Rev. 2 - 2 5 of 5
www.diodes.com December 2008
© Diodes Incorporated
DSS20201L
NEW PRODUCT
Package Outline Dimensions
Suggested Pad Layout
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume an y liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages. LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
SOT-23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00
K1 - - 0.400
L 0.45 0.61 0.55
M 0.085 0.18 0.11
α 0° 8° -
All Dimensions in mm
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
A
M
JL
D
F
BC
H
K
G
K1
XE
Y
C
Z