General Purpose Silicon Rectifiers
QW-BG015 Page 1
REV:A
Voltage: 50 to 1000 V
Current: 3.0 A
RoHS Device
1N5400-G Thru. 1N5408-G
Dimensions in inches and (millimeter)
DO-27 (DO-201AD)
Features
-Low forward voltage drop.
-High reliability.
-High current capability.
-High surge current capability.
Mechanical data
-Case: Molded plastic
-Epoxy: UL 94V-0 rate flame retardant
-Polarity: Color band denotes cathode end
-Mounting position: Any
-Weight: 1.2 grams
1.000(25.40) Min.
1.000(25.40) Min.
0.375(9.53)
0.335(8.51)
0.052(1.32)
0.048(1.22) DIA.
0.220(5.60)
0.197(5.00) DIA.
-Lead: Axial leads, solderable per MIL-STD-202,
method 208 guaranteed
Parameter Symbol Unit
Maximum re peak reverse voltagepetitive
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
.375”(9.5mm) Lead length @TA=75°C
Peak forward surge current, 8.3ms single
half sine-wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage @3.0A
Maximum reverse current DC
at rated DC blocking voltage
50
35
50
VRRM
VRMS
VDC
IF(AV)
IFSM
VF
IR
3.0
200
1.0
5.0
V
V
V
A
A
V
μA
Operating temperature range
Storage temperature range
Typical thermal resistance (Note 1) RθJA
TJ
TSTG
18
-65 to +125
-65 to +150
°C
°C
°C/W
NOTES:
1. Thermal resistance from junction to ambient 0.375” (9.5mm) lead length.
100
70
100
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
1000
@TJ=25°C
@TJ=100°C 100
Maximum Ratings and Electrical Characteristics (at TA=25°C unless otherwise noted)
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
1N5400
-G 1N5401
-G 1N5402
-G 1N5404
-G 1N5406
-G 1N5407
-G 1N5408
-G