© 2015 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25C to 150C - 500 V
VDGR TJ= 25C to 150C, RGS = 1M- 500 V
VGSS Continuous 20 V
VGSM Transient 30 V
ID25 TC= 25C - 10 A
IDM TC= 25C, Pulse Width Limited by TJM - 30 A
IATC= 25C - 10 A
EAS TC= 25C 1.5 J
dv/dt IS IDM, VDD VDSS, TJ 150C 10 V/ns
PDTC= 25C 300 W
TJ-55 ... +150 C
TJM 150 C
Tstg -55 ... +150 C
TL1.6mm (0.062 in.) from Case for 10s 300 C
TSOLD Plastic Body for 10s 260 C
MdMounting Torque (TO-3P,TO-220 & TO-247) 1.13/10 Nm/lb.in
Weight TO-263 2.5 g
TO-220 3.0 g
TO-3P 5.5 g
TO-247 6.0 g
DS99911D(2/15)
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = - 250A - 500 V
VGS(th) VDS = VGS, ID = - 250A - 2.0 - 4.5 V
IGSS VGS = 20V, VDS = 0V 100 nA
IDSS VDS = VDSS, VGS = 0V - 10 A
TJ = 125C - 250A
RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1 1
PolarPTM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTA10P50P
IXTP10P50P
IXTQ10P50P
IXTH10P50P
VDSS = - 500V
ID25 = - 10A
RDS(on)
1
TO-263 AA (IXTA)
G
S
D (Tab)
G = Gate D = Drain
S = Source Tab = Drain
TO-247 (IXTH)
G
S
DD (Tab)
TO-3P (IXTQ)
D
G
SD (Tab)
TO-220AB (IXTP)
D (Tab)
S
D
G
Features
International Standard Packages
Avalanche Rated
Rugged PolarPTM Process
Low Package Inductance
Fast Intrinsic Diode
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
High-Side Switches
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
IXTA10P50P IXTQ10P50P
IXTP10P50P IXTH10P50P
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = -10V, ID = 0.5 • ID25, Note 1 6.5 11 S
Ciss 2840 pF
Coss VGS = 0V, VDS = - 25V, f = 1MHz 275 pF
Crss 42 pF
td(on) 20 ns
tr 28 ns
td(off) 52 ns
tf 44 ns
Qg(on) 50 nC
Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 17 nC
Qgd 18 nC
RthJC 0.42C/W
RthCS (TO-3P & TO-247) 0.25 C/W
(TO-220) 0.50 C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V - 10 A
ISM Repetitive, Pulse Width Limited by TJM - 40 A
VSD IF = - 5A, VGS = 0V, Note 1 - 3 V
trr 414 ns
QRM 5.90 C
IRM - 28.6 A
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1: Pulse test, t 300s, duty cycle, d 2%.
Resistive Switching Times
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 3.3 (External)
IF = - 5A, -di/dt = -100A/s
VR = -100V, VGS = 0V
© 2015 IXYS CORPORATION, All Rights Reserved
IXTA10P50P IXTQ10P50P
IXTP10P50P IXTH10P50P
Fig. 1. Output Characteristics @ T
J
= 25ºC
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0-10-9-8-7-6-5-4-3-2-10
V
DS
- Volts
I
D
- Amperes
V
GS
= -10V
- 7V
- 5V
- 6V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
-26
-22
-18
-14
-10
-6
-2
-32-28-24-20-16-12-8-40
V
DS
- Volts
I
D
- Amperes
V
GS
= - 10V
- 8V
- 5V
- 6V
- 7V
Fig. 3. Output Characteristics @ T
J
= 125ºC
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0-18-16-14-12-10-8-6-4-20
V
DS
- Volts
I
D
- Amperes
V
GS
= - 10V
- 7V
- 6V
- 5V
Fig. 4. R
DS(on)
Normalized to I
D
= - 5A Value vs.
Junc tion Tempe ratu re
0.2
0.6
1.0
1.4
1.8
2.2
2.6
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centi grade
R
DS(on)
- Normalized
V
GS
= - 10V
I
D
= - 10A
I
D
= - 5A
Fig. 5 . RDS(on) Normalized to ID = - 5A Value vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
-26-22-18-14-10-6-2
I
D
- Am peres
R
DS(on)
- Normalized
V
GS
= - 10V
T
J
= 25ºC
T
J
= 125ºC
Fig. 6. Maximum Drain Current vs.
Case Temperature
-11
-9
-7
-5
-3
-1
-50 -25 0 25 50 75 100 125 150
Tc - Degrees Centigrade
I
D
- Amperes
IXTA10P50P IXTQ10P50P
IXTP10P50P IXTH10P50P
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 7. Input Admittance
-16
-14
-12
-10
-8
-6
-4
-2
0-6.5-6.0-5.5-5.0-4.5-4.0-3.5
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
4
8
12
16
20
24
-18-16-14-12-10-8-6-4-20
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-30
-25
-20
-15
-10
-5
0-3.5-3.0-2.5-2.0-1.5-1.0-0.5
V
SD
- Volts
I
S
- Amperes
T
J
= 12 5ºC
T
J
= 25ºC
Fig. 10. Gate Charge
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
00 5 10 15 20 25 30 35 40 45 50
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= - 250V
I
D
= - 5A
I
G
= -1mA
Fig. 11. Capacitance
10
100
1,000
10,000
-40-35-30-25-20-15-10-50
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MH
z
Ciss
Crss
Coss
Fig. 12. Forward-Bias Safe Operating Area
0.1
1
10
100
10 100 1000
V
DS
- Volts
I
D
- Amper es
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
100µs
R
DS(on)
Limit
10ms
DC
-
-
----
-100ms
© 2015 IXYS CORPORATION, All Rights Reserved
IXTA10P50P IXTQ10P50P
IXTP10P50P IXTH10P50P
Fig. 13. Maxim um Transient Thermal Impedance
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Pul se Width - Seconds
Z
(th)JC
- ºC / W
IXTA10P50P IXTQ10P50P
IXTP10P50P IXTH10P50P
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_10P50P(B5)5-21-08-B
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
TO-247 (IXTH) Outline
Terminals: 1 - Gate 2 - Drain
e
P
1 2 3
TO-3P (IXTQ) Outline
Pins: 1 - Gate 2 - Drain
TO-220 (IXTP) Outline
TO-263 (IXTA) Outline
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