1
PNA2W01M (PN207)
Darlington Phototransistor
For optical control systems
Features
High sensitivity
Easy to combine with red and infrared light emitting diodes
Small size designed for easier mounting to printed circuit board
Darlington Phototransistors
;;
50Ω
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
Sig.IN
;
;
R
L
V
CC
Sig.OUT
(Input pulse)
(Output pulse) 10%
90%
t
d
t
r
t
f
2.8±0.2
3.2±0.3
0.5±0.1
0.15
45˚
12
10.0 min.
Type number : Emitter mark (Black)
10.0 min.
3.2±0.3
1.8 1.8
(0.7)
(0.7)
0.4±0.1
2.2±0.15
2.8±0.2 1.05±0.10.85 ± 0.15
R0.9
ø1.8
1: Collector
2: Emitter
Unit : mm
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Symbol Ratings Unit
Collector to emitter voltage
VCEO 20 V
Emitter to collector voltage
VECO 5V
Collector current IC30 mA
Collector power dissipation
PC100 mW
Operating ambient temperature
Topr –25 to +85 ˚C
Storage temperature Tstg –30 to +100 ˚C
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Symbol Conditions min typ max Unit
Dark current ICEO VCE = 10V 0.1 0.5 µA
Collector photo current ICE(L) VCE = 10V, L = 2 lx*1 0.5 3 mA
Peak sensitivity wavelength
λPVCE = 10V 800 nm
Acceptance half angle θ
Measured from the optical axis to the half power point
18 deg.
Response time tr, tf*2 VCC = 10V, ICE(L) = 5mA, RL = 100Ω200 µs
Collector saturation voltage
V
CE(sat)
ICE(L) = 1mA, L = 100 lx*1 0.7 1.5 V
*1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2 Switching time measurement circuit
Note) The part number in the parenthesis shows conventional part number.
2
PNA2W01M Darlington Phototransistors
Fall time tf (µs)
tr — ICE(L)
10 5
104
103
10 2
Collector photo current ICE(L) (mA)
Rise time tr (µs)
10 –1 110
10
10 –2
VCC = 10V
Ta = 25˚C
tf — ICE(L)
10 5
104
103
10 2
Collector photo current ICE(L) (mA)
10 –1 110
10
10 –2
VCC = 10V
Ta = 25˚C
PC — Ta
120
100
80
60
40
20
Ambient temperature Ta (˚C )
Collector power dissipation PC (mW)
0 20406080100
0
– 20
ICE(L) — VCE
32
24
16
8
0
Collector to emitter voltage VCE (V)
Collector photo current ICE(L) (mA)
02016812424
Ta = 25˚C
T = 2856K
ICE(L) — L
10 3
10 2
10
1
Illuminance L (lx)
Collector photo current ICE(L) (mA)
10 10 2 10 3
10 –1 1
VCE = 10V
Ta = 25˚C
T = 2856K
Spectral sensitivity characteristics
100
80
60
40
20
Wavelength λ (nm)
Relative sensitivity S (%)
400 600 800 1000 1200
0
200
VCE = 10V
Ta = 25˚C
VCE = 10V
T = 2856K
ICE(L) — Ta
10 2
1
10
Ambient temperature Ta (˚C )
– 40 0 40 80 120
10 –1
Collector photo current ICE(L) (mA)
ICEO — Ta
10 2
10 –1
10
10 –2
1
Ambient temperature Ta (˚C )
VCE = 10V
Dark current ICEO (µA)
10 –3
– 20 0 40 8020 60 100
0˚ 10˚ 20˚
30˚
40˚
50˚
60˚
70˚
80˚
90˚
Directivity characteristics
20
90
100
80
70
60
50
40
30
Relative sensitivity S (%)
1 lx
PC = 100mW
L = 10 lx
5 lx
2 lx
RL = 1kΩ
500Ω
100Ω
RL = 1kΩ
500Ω
100Ω
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2001 MAR
