2N6674 2N6675 NPN SILICON POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6674, 2N6675 types are NPN Silicon Triple Diffused Mesa Power Transistors designed for high voltage switching applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25C) Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCEV VCEO 2N6674 450 VEB=7.0V IC=200mA (2N6674) BVCEO VCE(SAT) IC=200mA (2N6675) IC=10A, IB=2.0A VCE(SAT) VCE(SAT) UNITS V 400 V 300 VEBO IC 7.0 V 15 A ICM IB 20 A 5.0 A 175 W PD TJ, Tstg -65 to +200 C JC 1.0 C/W ELECTRICAL CHARACTERISTICS: (TC=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICEV VCE=Rated VCEV, VBE=1.5V ICEV VCE=Rated VCEV, VBE=1.5V, TC=100C IEBO BVCEO 2N6675 650 MAX 0.1 UNITS mA 1.0 mA 2.0 mA 300 V 400 V 1.0 V IC=10A, IB=2.0A, TC=100C IC=15A, IB=5.0A 2.0 V 5.0 V VBE(SAT) hFE IC=10A, IB=2.0A VCE=2.0V, IC=10A 1.5 V IS/b IS/b VCE=30V, IC=5.9A VCE=100V, IC=250mA 1.0 hfe ft VCE=10V, IC=1.0A, f=5.0MHz VCE=10V, IC=1.0A, f=5.0MHz 3.0 15 50 MHz Cob VCB=10V, IE=0, f=100kHz 150 500 pF 8.0 20 s 1.0 s 10 R1 (10-March 2011) 2N6674 2N6675 NPN SILICON POWER TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (TC=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX td* VEB=6.0V, IC=10A, IB=2.0A 0.1 tr* VEB=6.0V, IC=10A, IB=2.0A 0.6 tr* ts* ts* tf* tf* VEB=6.0V, IC=10A, IB=2.0A, TC=100C VEB=6.0V, IC=10A, IB1=IB2=2.0A VEB=6.0V, IC=10A, IB1=IB2=2.0A, TC=100C VEB=6.0V, IC=10A, IB1=IB2=2.0A VEB=6.0V, IC=10A, IB1=IB2=2.0A, TC=100C 1.0 UNITS s s s 2.5 s 4.0 s 0.5 s 1.0 s * VCC=135V, tp=20s TO-3 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter Case) Collector MARKING: FULL PART NUMBER R1 (10-March 2011) w w w. c e n t r a l s e m i . c o m