2N6674
2N6675
NPN SILICON
POWER TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6674, 2N6675
types are NPN Silicon Triple Diffused Mesa Power
Transistors designed for high voltage switching
applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25°C) SYMBOL 2N6674 2N6675 UNITS
Collector-Emitter Voltage VCEV 450 650 V
Collector-Emitter Voltage VCEO 300 400 V
Emitter-Base Voltage VEBO 7.0 V
Continuous Collector Current IC 15 A
Peak Collector Current ICM 20 A
Continuous Base Current IB 5.0 A
Power Dissipation PD 175 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance ΘJC 1.0 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICEV V
CE=Rated VCEV, VBE=1.5V 0.1 mA
ICEV V
CE=Rated VCEV, VBE=1.5V, TC=100°C 1.0 mA
IEBO V
EB=7.0V 2.0 mA
BVCEO I
C=200mA (2N6674) 300 V
BVCEO I
C=200mA (2N6675) 400 V
VCE(SAT) I
C=10A, IB=2.0A 1.0 V
VCE(SAT) I
C=10A, IB=2.0A, TC=100°C 2.0 V
VCE(SAT) I
C=15A, IB=5.0A 5.0 V
VBE(SAT) I
C=10A, IB=2.0A 1.5 V
hFE V
CE=2.0V, IC=10A 8.0 20
IS/b V
CE=30V, IC=5.9A 1.0 s
IS/b V
CE=100V, IC=250mA 1.0 s
hfe V
CE=10V, IC=1.0A, f=5.0MHz 3.0 10
ft V
CE=10V, IC=1.0A, f=5.0MHz 15 50 MHz
Cob V
CB=10V, IE=0, f=100kHz 150 500 pF
TO-3 CASE
R1 (10-March 2011)
www.centralsemi.com
ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
td* VEB=6.0V, IC=10A, IB=2.0A 0.1 µs
tr* VEB=6.0V, IC=10A, IB=2.0A 0.6 µs
tr* VEB=6.0V, IC=10A, IB=2.0A, TC=100°C 1.0 µs
ts* VEB=6.0V, IC=10A, IB1=IB2=2.0A 2.5 µs
ts* VEB=6.0V, IC=10A, IB1=IB2=2.0A, TC=100°C 4.0 µs
tf* VEB=6.0V, IC=10A, IB1=IB2=2.0A 0.5 µs
tf* VEB=6.0V, IC=10A, IB1=IB2=2.0A, TC=100°C 1.0 µs
* VCC=135V, tp=20µs
2N6674
2N6675
NPN SILICON
POWER TRANSISTOR
TO-3 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Emitter
Case) Collector
MARKING:
FULL PART NUMBER
www.centralsemi.com
R1 (10-March 2011)
