Rev. J 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 1
www.SEMICOA.com
2N3227UB
Silicon NPN Transisto
r
Data Sheet
Description
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N3227UBJ)
• JANTX level (2N3227UBJX)
• JANTXV level (2N3227UBJV)
• JANS level (2N3227UBJS)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
• Radiation testing (total dose) upon request
www.SEMICOA.com or (714) 979-1900
Applications
• High-speed switching transistor
• Low power
• NPN silicon transistor
Features
• Hermetically sealed Cersot ceramic
• Also available in chip configuration
• Chip geometry 0005
• Reference document:
MIL-PRF-19500/317
Benefits
• Qualification Levels: JAN, JANTX,
JANTXV and JANS
• Radiation testing available
Absolute Maximum Ratings TC = 25°C unless otherwise specified
Parameter Symbol Rating Unit
Collector-Emitter Voltage VCEO 20
Volts
Collector-Base Voltage VCBO 40
Volts
Emitter-Base Voltage VEBO 6
Volts
Power Dissipation, TA = 25°C
Derate linearly above 70°C PT 0.4
3.08
mW
mW/°C
Thermal Resistance RθJA 325 °C/W
Operating Junction Temperature TJ -65 to +200 °C
Storage Temperature TSTG -65 to +200 °C
Copyright 2010
SEMICOA Corporation offers:
Please contact SEMICOA for special configurations
SEMICOA Corporation
Rev. J 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2
www.SEMICOA.com
2N3227UB
Silicon NPN Transisto
r
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Collector-Emitter Breakdown Voltage V(BR)CEO I
C = 10 mA 20 Volts
Collector-Base Cutoff Current
ICBO1
ICBO2
ICBO3
VCB = 40 Volts
VCB = 32 Volts
VCB = 20 Volts, TA = 150°C
10
0.2
30
µA
Collector-Emitter Cutoff Current ICEX VCE= 10Volts, VEB= 0.25Volts
TA = 125°C 30
µA
Collector-Emitter Cutoff Current ICES V
CE = 20 Volts 400 nA
Emitter-Base Cutoff Current IEBO1
IEBO2
VEB = 6 Volts
VEB = 4 Volts
10
0.25 µA
On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Parameter Symbol Test Conditions Min Typ Max Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
hFE5
IC = 10 mA, VCE = 0.35 Volts
IC = 30 mA, VCE = 0.4 Volts
IC = 10 mA, VCE = 1 Volts
IC = 100 mA, VCE = 1 Volts
IC = 10 mA, VCE = 1 Volts
TA = -55°C
70
40
75
30
20
250
250
300
150
Base-Emitter Saturation Voltage
VBEsat1
VBEsat2
VBEsat3
VBEsat4
VBEsat5
IC = 10 mA, IB = 1 mA
IC = 30 mA, IB = 3 mA
IC = 100 mA, IB = 10 mA
IC= 10mA, IB= 1mA,TA=+125°C
IC= 10mA, IB= 1mA, TA = -55°C
0.70
0.80
0.50
0.85
0.90
1.20
1.02
Volts
Collector-Emitter Saturation Voltage
VCEsat1
VCEsat2
VCEsat3
VCEsat4
IC = 10 mA, IB = 1 mA
IC = 30 mA, IB = 3 mA
IC = 100 mA, IB = 10 mA
IC= 10mA, IB= 1mA,TA=+125°C
0.20
0.25
0.45
0.30
Volts
Dynamic Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio |hFE| VCE = 10 Volts, IC = 10 mA,
f = 100 MHz 5 10
Open Circuit Output Capacitance COBO VCB = 5 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz 4
pF
Open Circuit Input Capacitance CIBO VEB = 0.5 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz 4
pF
Storage Time ts I
C = 10 mA, IB1=IB2 = 10 mA 18 ns
Saturated Turn-On Time tON IC = 10 mA, IB1= 3 mA,
IB2 = 1.5 mA 12
ns
Saturated Turn-Off Time tOFF IC = 10 mA, IB1= 3 mA,
IB2 = 1.5 mA 25
ns
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