Document Number: 83653 www.vishay.com
Revision 17-August-01
2–198
FEATURES
• Identical Channel to Channel Footprint
ILD620 Crosses to TLP620-2
ILQ620 Crosses to TLP620-4
• Current Transfer Ratio (CTR) at
I
F
= ±5.0 mA
ILD/Q620: 50% Min.
ILD/Q620GB: 100% Min.
• Saturated Current Transfer Ratio (CTR
SAT
)
at
I
F
= ±1.0 mA
ILD/Q620: 60% Typ.
ILD/Q620GB: 30% Min.
• High Collector-Emitter Voltage, BV
CEO
=70 V
• Dual and Quad Packages Feature:
– Reduced Board Space
– Lower Pin and Parts Count
– Better Channel to Channel CTR Match
– Improved Common Mode Rejection
• Field-Effect Stable by TRIOS
(TRansparent IOn Shield)
• Isolation Test Voltage from Double Molded
Package
• Underwriters Lab File #E52744
• VDE 0884 Available with Option 1
Maximum Ratings
(Each Channel)
Emitter
Forward Current .........................................±60 mA
Surge Current .............................................. ±1.5 A
Power Dissipation ...................................... 100 mW
Derate from 25
°
C .................................. 1.3 mW/
°
C
Detector
Collector-Emitter Breakdown Voltage ............. 70 V
Collector Current ......................................... 50 mA
Collector Current (t <1.0 ms)...................... 100 mA
Power Dissipation ...................................... 150 mW
Derate from 25
°
C.................................. 2.0 mW/
°
C
Package
Isolation Test Voltage (t=1.0 sec.) ......... 5300 V
RMS
Package Dissipation, ILD620/GB ............. 400 mW
Derate from 25
°
C............................... 5.33 mW/
°
C
Package Dissipation, ILQ620/GB............. 500 mW
Derate from 25
°
C............................... 6.67 mW/
°
C
Creepage..................................................
≥
7.0 mm
Clearance ................................................
≥
7.0 mm
Isolation Resistance
V
IO
=500 V,
T
A
=25
°
C...............................
≥
10
12
Ω
V
IO
=500 V,
T
A
=100
°
C............................
≥
10
11
Ω
Storage Temperature .................. –55
°
C to +150
°
C
Operating Temperature .............. –55
°
C to +100
°
C
Junction Temperature ................................... 100
°
C
Soldering Temperature
(2.0 mm from case bottom) ...................... 260
°
C
V
DE
DESCRIPTION
The ILD/Q620 and ILD/Q620GB are multi-channel input phototransistor
optocouplers that use inverse parallel GaAs IRLED emitters and high gain
NPN silicon phototransistors per channel. These devices are constructed
using over/under leadframe optical coupling and double molded insulation
resulting in a Withstand Test Voltage of 5300 V
RMS
.
The LED parameters and the linear CTR characteristics combined with the
TRIOS field-effect process make these devices well suited for AC voltage
detection. The ILD/Q620GB with its low
I
F
guaranteed CTR
CE
sat
minimizes
power dissipation of the AC voltage detection network that is placed in
series with the LEDs. Eliminating the phototransistor base connection pro-
vides added electrical noise immunity from the transients found in many
industrial control environments.
Collector
Emitter
Collector
Emitter
Collector
Emitter
Collector
Emitter
A/K
A/K
A/K
A/K
A/K
A/K
A/K
A/K
1
2
3
4
5
6
7
8
16
15
14
13
Collector
Emitter
Collector
Emitter
A/K
A/K
A/K
A/K
1
2
3
4
8
7
6
5
12
11
10
9
K=Cathode
K=Cathode
pin one ID
.255 (6.48)
.268 (6.81)
.379 (9.63)
.390 (9.91)
.030 (0.76)
.045 (1.14)
4° typ.
.100 (2.54) typ.
10°
3°–9°
.300 (7.62)
typ.
.018 (.46)
.022 (.56) .008 (.20)
.012 (.30)
.110 (2.79)
.130 (3.30)
.130 (3.30)
.150 (3.81)
.020 (.51 )
.035 (.89 )
.230(5.84)
.250(6.35)
4321
.031 (0.79)
.050 (1.27)
5678
.255 (6.48)
.265 (6.81)
.779 (19.77 )
.790 (20.07)
.030 (.76)
.045 (1.14)
4°
.100 (2.54)typ.
10°
typ.
3°–9°
.018 (.46)
.022 (.56)
.008 (.20)
.012 (.30)
.110 (2.79)
.130 (3.30)
pin
one ID
.130 (3.30)
.150 (3.81)
.020(.51)
.035 (.89)
8 7 6 5 4 3 2 1
9 10 11 12 13 14 15 16
.031(.79)
.300 (7.62)
typ.
.230 (5.84)
.250 (6.35)
.050 (1.27)
Dimensions in inches (mm)
DUAL CHANNEL
ILD620/620GB
QUAD CHANNEL
ILQ620/620GB
AC Input Phototransistor
Optocoupler
Document Number: 83653 www.vishay.com
Revision 17-August-01
2–199
Characteristics
Symbol Min. Typ. Max. Unit Condition
Emitter
Forward Voltage
V
F
1.0 1.15 1.3 V
I
F
=
±
10 mA
Forward Current
I
F
—2.5 20
µ
A
V
R
=
±
0.7 V
Capacitance
C
O
—25 —pF
V
F
=0 V, f=1.0 MHz
Thermal Resistance, Junction to Lead
R
THJL
—750 —K/W —
Detector
Capacitance
C
CE
—6.8 —pF
V
CE
=5.0 V, f=1.0 MHz
Collector-Emitter Leakage Current
I
CEO
—10 100 nA
V
CE
=24 V
Collector-Emitter Leakage Current
I
CEO
—2.0 50
µ
A
T
A
=85
°
C,
V
CE
=24 V
Thermal Resistance, Junction to Lead
R
THJL
—500 —K/W —
Package Transfer Characteristics
Channel/Channel CTR Match CTRX/CTRY 1 to 1 —3 to 1 —
I
F
=
±
5.0 mA,
V
CE
=5.0 V
CTR Symmetry I
CE(RATIO)
0.5 —2.0 —I
CE
(
I
F
=–5.0 mA)/I
CE
(
I
F
=+5.0 mA)
Off-State Collector Current I
CE(OFF)
—1.0 10
µ
A
V
F
=±0.7 V,
V
CE
=24 V
ILD/Q620
Saturated Current Transfer Ratio CTR
CEsat
—60 —%
I
F
=
±
1.0 mA,
V
CE
=0.4 V
Current Transfer Ratio CTR
CE
50 80 600 %
I
F
=
±
5.0 mA,
V
CE
=5.0 V
Collector-Emitter Saturation Voltage
V
CEsat
——0.4 V
I
F
=
±
8.0 mA, I
CE
=2.4 mA
ILD/Q620GB
Saturated Current Transfer Ratio CTR
CEsat
30 ——%
I
F
=
±
1.0 mA,
V
CE
=0.4 V
Current Transfer Ratio (Collector-Emitter) CTR
CE
100 200 600 %
I
F
=
±
5.0 mA,
V
CE
=5.0 V
Collector-Emitter Saturation Voltage
V
CEsat
——0.4 V
I
F
=
±
1.0 mA, I
CE=0.2 mA
Isolation and Insulation
Common Mode Rejection, Output High CMH —5000 —V/µsV
CM=50 VP-P, RL=1.0 kΩ, IF=0
mA
Common Mode Rejection, Output Low CML —5000 —V/µsV
CM=50 VP-P, RL=1.0 kΩ,
IF=10 mA
Common Mode Coupling Capacitance CCM —0.01 —pF —
Package Capacitance CI-O —0.8 —pF VI-O=0 V, f=1.0 MHz
Insulation Resistance RS—1012 —ΩVI-O=500 V
Channel to Channel Insulation —500 ——VAC —
Switching Times
Figure 1. Non-saturated switching timing
Figure 2. Saturated switching timing
Figure 3. Non-saturated switching timing
VO
VCC=5 V
RL=75 Ω
F=10 KHz,
DF=50%
IF=10 mA
VO
VCC=5 V
F=10 KHz,
DF=50%
IF=10 mA
RL=1 KΩ
V0
IF
tPHL
tS
50%
tPLH
ton toff
tR
tD
tF
Document Number: 83653 www.vishay.com
Revision 17-August-01 2–200
Figure 4. Saturated switching timing
IF
tR
VO
tD
tStF
tPHL
tPLH
VTH=1.5 V
Non-saturated
Saturated
Characteristic Symbol Typ. Unit Test
Condition
On Time tON 3.0 µsIF=±10 mA
VCC=5.0 V
RL=75 Ω
50% of VPP
Rise Time tr20 µs
Off Time tOFF 2.3 µs
Fall Time tf2.0 µs
Propagation H-L tPHL 1.1 µs
Propagation L-H tPLH 2.5 µs
Characteristic Symbol Typ. Unit Test
Condition
On Time tON 4.3 µsIF=±10 mA
VCC=5.0 V
RL=1.0 KΩ
VTH=1.5 V
Rise Time tr2.8 µs
Off Time tOFF 2.5 µs
Fall Time tf11 µs
Propagation H-L tPHL 2.6 µs
Propagation L-H tPLH 7.2 µs
Figure 5. LED forward current versus forward voltage
Figure 6. Collector-emitter leakage versus temperature
Figure 7. Maximum LED current versus ambient
temperature
Figure 8. Maximum LED power dissipation
-1.5 -1.0 -0.5 0.0 0.5 1.0 1.5
-60
-40
-20
0
20
40
60
25°
C
85°
C
–55°
C
VF - LED Forward Voltage - V
IF - LED Forward Current - mA
100806040200-20
10
10
10
10
10
10
10
10
-2
-1
0
1
2
3
4
5
TA - Ambient Temperature - °C
Iceo - Collector-Emitter - nA
TYPICAL
Vce = 10V
--60 -40 -20 0 20 40 60 80 100
120
100
80
60
40
0
20
Ta - Ambient Temperature - °C
IF - Maximum LED Current - mA
TJ (MAX)=100°C
--60 -40 -20 0 20 40 60 80 100
200
100
0
50
Ta - Ambient Temperature - °C
PLED - LED Power - mW
150
Document Number: 83653 www.vishay.com
Revision 17-August-01 2–201
Figure 9. Collector current versus diode forward
current
Figure 10. Normalization factor for non-saturated and
saturated CTR TA=50°C versus IF
Figure 11. Normalization factor for non-saturated and
saturated CTR TA=70°C versus IF
1 5 10 20
100
50
10
2.5
5.0
1.0
0.5
0.1
Forward Current–IF (mA)
IC –Normalized Collector Current
Normalized to
ILD/Q620GB
ILD/Q620
IF=10 mA
VCE=5 V
TA=25°C
CTRNF - Normalized CTR Factor
.1 1 10 100
2.0
1.5
1.0
0.5
0.0
IF - LED Current - mA
NCTRce
TA = 50°C
NCTRce(sat)
Normalized to:
VCE = 10 V, IF = 5 mA, TA = 25°C
CTRce(sat) VCE = 0.4 V
CTRNF - Normalized CTR Factor
.1 1 10 100
2.0
1.5
1.0
0.5
0.0
IF - LED Current - mA
NCTRce
TA = 70°C
NCTRce(sat)
Normalized to:
VCE = 10 V, IF = 5 mA, TA = 25°C
CTRce(sat) VCE = 0.4 V
Figure 12. Normalization factor for non-saturated and
saturated CTR TA=100°C versus IF
Figure 13. Peak LED current versus peak duration, Tau
Figure 14. Maximum detector power dissipation
Figure 15. Maximum collector current versus collector
voltage
CTRNF - Normalized CTR Factor
.1 1 10 100
2.0
1.5
1.0
0.5
0.0
IF - LED Current - mA
NCTRce
TA = 100°C
NCTRce(sat)
Normalized to:
VCE = 10 V, IF = 5 mA, TA = 25°C
CTRce(sat) VCE = 0.4 V
τ
10-6 10-5 10-4 10-3 10-2 10-1 100101
10000
1000
100
10
t - LED Pulse Duration - s
If(pk) - Peak LED Current - mA
τ
t
DF = /t
.005
.05
.1
.2
.01
.5
.02
Duty Factor
-60 -40 -20 0 20 40 60 80 100
0
50
100
150
200
Ta - Ambient Temperature - °C
P - Detector Power - mW
DET
.1 1 10 100
1000
100
10
1
.1
VCE - Collector-Emitter Voltage - V
ICE - Collector Current - mA
Rth=500°C/W
25°C
50°C
75°C
90°C
