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MOS FIELD EFFECT TRANSISTOR
DESCRIPTION
The 2SK2476 is N-Channel MOS Field Effect Transistor designed
for high voltage switching applications.
FEATURES
•Low On-Resistance
RDS (on) = 5.0 Ω (VGS = 10 V, ID = 2.0 A)
•Low Ciss Ciss = 590 pF TYP.
•High Avalanche Capability Ratings
•Isolated TO-220 Package
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS 800 V
Gate to Source Voltage VGSS ±30 V
Drain Current (DC) ID(DC) ±3.0 A
Drain Current (pulse)*ID(pulse) ±9.0 A
Total Power Dissipation (Tc = 25 ˚C) PT1 40 W
Total Power Dissipation (TA = 25 ˚C) PT2 2.0 W
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
Single Avalanche Current** IAS 3.0 A
Single Avalanche Energy** EAS 37.8 mJ
*PW ≤ 10
µ
s, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
2SK2476
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. D10268EJ1V0DS00 (1st edition)
Date Published August 1995 P
Printed in Japan
PACKAGE DIMENSIONS
(in millimeter)
10.0±0.3 4.5±0.2
3.2±0.2 2.7±0.2
2.5±0.11.3±0.2
1.5±0.2
2.54
0.7±0.1
2.54 0.65±0.1
123
3±0.14±0.2
15.0±0.3
12.0±0.213.5MIN.
1. Gate
2. Drain
3. Source
MP-45F (ISOLATED TO-220)
Body
Diode
Source
Drain
Gate
©1995
DATA SHEET
2SK2476
2
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS
Drain to Source On-Resistance RDS (on) 3.4 5.0 VGS = 10 V, ID = 2.0 A
Gate to Source Cutoff Voltage VGS (off) 2.5 3.5 VDS = 10 V, ID = 1 mA
Forward Transfer Admittance | yfs | 1.0 VDS = 20 V, ID = 2.0 A
Drain Leakage Current IDSS 100 VDS = VDSS, VGS = 0
Gate to Source Leakage Current IGSS ±100 VGS = ±30 V, VDS = 0
Input Capacitance Ciss 590 VDS = 10 V
Output Capacitance Coss 100 VGS = 0
Reverse Transfer Capacitance Crss 20 f = 1 MHz
Turn-On Delay Time td (on) 15 ID = 2.0 A
Rise Time tr5 VGS = 10 V
Turn-Off Delay Time td (off) 45 VDD = 150 V
Fall Time tf7 RG = 10 Ω
Total Gate Charge QG20 ID = 3.0 A
Gate to Source Charge QGS 5 VDD = 450 V
Gate to Drain Charge QGD 10 VGS = 10 V
Body Diode Forward Voltage VF (S-D) 1.0 IF = 3.0 A, VGS = 0
Reverse Recovery Time trr 510 IF = 3.0 A, VGS = 0
Reverse Recovery Charge Qrr 2.2 di/dt = 50 A/
µ
s
UNIT
Ω
V
S
µ
A
nA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
µ
C
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
Test Circuit 3 Gate Charge
VGS = 20 - 0 V
PG
RG = 25 Ω
50 Ω
D.U.T.
L
VDD
Test Circuit 1 Avalanche Capability
PG. RG = 10 Ω
D.U.T.
RL
VDD
Test Circuit 2 Switching Time
RG
PG.
IG = 2 mA
50 Ω
D.U.T.
RL
VDD
ID
VDD
IAS VDS
BVDSS
Starting Tch
VGS
0
t = 1us
Duty Cycle ≤ 1 %
VGS
Wave Form
ID
Wave Form
VGS
ID
10 %
10 %
0
0
90 %
90 %
90 %
10 %
VGS (on)
ID
ton toff
td (on) trtd (off) tf
t
2SK2476
3
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
FORWARD BIAS SAFE OPERATING AREA
VDS - Drain to Source Voltage - V
ID - Drain Current - A
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
ID - Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
VGS - Gate to Source Volta
g
e - V
ID - Drain Current - A
0.1
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TC - Case Temperature - ˚C
dT - Percentage of Rated Power - %
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
TC - Case Temperature - ˚C
PT - Total Power Dissipation - W
020
020 40 60 80 100 120 140 160
20
40
60
80
100
40 60 80 100 120 140 160
70
60
50
40
30
20
10
0.1
1
1
10
100
10 100 1000
TC = 25 ˚C
Single Pulse
020 30 40
5
1.0
10
100
Pulsed
VDS = 10 V
10
10
0
Pulsed
1 ms
51015
10 ms
100 ms
Power Dissipation Limited
R
DS(on)
Limited (at V
GS
= 10 V)
TA = –25 ˚C
25 ˚C
75 ˚C
125 ˚C
VGS = 20 V
10 V
8 V
6 V
ID(pulse)
ID(DC)
PW = 10 s
µ
2SK2476
4
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
th(t)
- Transient Thermal Resistance - ˚C/W
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
| y
fs
| - Forward Transfer Admittance - S
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-State Resistance - Ω
010
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - ˚C
V
GS(off)
- Gate to Source Cutoff Voltage - V
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-State Resistance - Ω
5
1.0
10
0.001
0.01
0.1
1
100
1 000
1 m 10 m 100 m 1 10 100 1 000 10 100
µµ
V
DS
= 20 V
Pulsed
10.1
0.1
1
10
1.0 10
5
20 30
Pulsed
10
10 100
Pulsed
V
GS
= 10 V
0
5
V
DS
= 10 V
I
D
= 1 mA
–50 0 50 100 150
0
0.01
Single Pulse
T
c
= 25 ˚C
10
I
D
= 3 A
1.5 A
0.6 A
T
A
= –25˚C
25˚C
75˚C
125˚C
R
th(ch-a)
= 62.5(˚C/W)
R
th(ch-c)
= 3.13(˚C/W)
2SK2476
5
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - ˚C
RDS(on) - Drain to Source On-State Resistance - Ω
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
VSD - Source to Drain Voltage - V
ISD - Diode Forward Current - A
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
Ciss, Coss, Crss - Capacitance - pF
SWITCHING CHARACTERISTICS
ID - Drain Current - A
td(on), tr, td(off), tf - Switching Time - ns
1.0
0.1
0
–50
5
050 100 150
VGS = 10 V
ID = 2 A
0.1
0
1
10
100
0.5
Pulsed
10
1.0
100
1 000
10 000
10 100 1 000
VGS = 0
f = 1 MHz
10
100
1 000
1.0 10 100
VGS - Gate to Source Voltage - V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
ID - Drain Current - A
trr - Reverse Recovery time - ns
di/dt = 50 A/ s
VGS = 0
µ
10
0.1
100
1 000
1.0 10 100
1.0 1.5
VDD = 150 V
VGS = 10 V
RG = 10 Ω
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Qg - Gate Charge - nC
2
4
6
8
10
12
14
16
0
Ciss
Coss
Crss
tr
td(off)
tf
td(on)
VGS = 10 V
VGS = 0
10 20 30
ID = 3.0 A
VDD = 150 V
300 V
450 V
10 000
2SK2476
6
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
L - Inductive Load - H
IAS - Single Avalanche Current - A
SINGLE AVALANCHE ENERGY
DERATING FACTOR
Starting Tch - Starting Channel Temperature - ˚C
Energy Derating Factor - %
0.1
0
25
1.0
10
100
µ
1 m 10 m 100 m
VDD = 150 V
VGS = 20 V → 0
RG = 25 Ω
20
80
120
160
50 75 100 125 150
VDD = 150 V
RG = 25 Ω
VGS = 20 V → 0
IAS ≤ 3.0A
100
60
40
140
IAS = 3.0 A
E
AS
= 37.8 mJ
2SK2476
7
REFERENCE
Document Name Document No.
NEC semiconductor device reliability/quality control system. TEI-1202
Quality grade on NEC semiconductor devices. IEI-1209
Semiconductor device mounting technology manual. IEI-1207
Semiconductor device package manual. IEI-1213
Guide to quality assurance for semiconductor devices. MEI-1202
Semiconductor selection guide. MF-1134
Power MOS FET features and application switching power supply. TEA-1034
Application circuits using Power MOS FET. TEA-1035
Safe operating area of Power MOS FET. TEA-1037
2SK2476
8
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
