MMBTH10 NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 5
www.unisonic.com.tw QW-R206-003.F
ABSOLUTE MAXIMUM RATING (Ta=25°С unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO 30 V
Collector-Emitter Voltage VCEO 25 V
Emitter-Base Voltage VEBO 3 V
SOT-23 225 mW
Power Dissipation SOT-323/SOT-523 PC 200 mW
Collector current IC 50 mA
Junction Temperature TJ 150 °C
Storage Temperature TSTG -55 ~ +150 °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°С unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BVCBO I
C=100µA 30 V
Collector-Emitter Breakdown Voltage BVCEO I
C=1mA 25 V
Emitter-Base Breakdown Voltage BVEBO I
E=10µA 3 V
Collector-Emitter Saturation Voltage VCE(SAT) IC=4mA, IB=400µA 500 mV
Base-Emitter on Voltage VBE(ON) VCE=10V, IC=4mA 950 mV
Collector Cut-off Current ICBO V
CB=25V 100 nA
Emitter Cut-off Current IEBO V
EB=2V 100 nA
DC Current Gain hFE V
CE=10V, IC=4mA 60
Output Capacitance Cob V
CB=10V, f=1MHZ 0.7 pF
Current Gain Bandwidth Product fT V
CE=10V, IC=4mA, f=100MHz 650 MHz
CLASSIFICATION OF hFE
RANK A B C
RANGE 60-100 90-130 120-200