UNISONIC TECHNOLOGIES CO., LTD
MMBTH10 NPN SILICON TRANSISTOR
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Copyright © 2009 Unisonic Technologies Co., Ltd QW-R206-003.F
RF TRANSISTOR
DESCRIPTION
The UTC MMBTH10 is designed for using as VHF and UHF
oscillators and VHF Mixer in a tuner of a TV receiver.
ORDERING INFORMATION
Ordering Number Pin Assignment
Normal Lead Free Plating Halogen Free Package 1 2 3 Packing
MMBTH10-x-AE3-R MMBTH10L-x-AE3-R MMBTH10G-x-AE3-R SOT-23 E B C Tape Reel
MMBTH10-x-AL3-R MMBTH10L-x-AL3-R MMBTH10G-x-AL3-R SOT-323 E B C Tape Reel
MMBTH10-x-AN3-R MMBTH10L-x-AN3-R MMBTH10G-x-AN3-R SOT-523 E B C Tape Reel
MARKING
MMBTH10 NPN SILICON TRANSISTOR
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ABSOLUTE MAXIMUM RATING (Ta=25°С unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO 30 V
Collector-Emitter Voltage VCEO 25 V
Emitter-Base Voltage VEBO 3 V
SOT-23 225 mW
Power Dissipation SOT-323/SOT-523 PC 200 mW
Collector current IC 50 mA
Junction Temperature TJ 150 °C
Storage Temperature TSTG -55 ~ +150 °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°С unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BVCBO I
C=100µA 30 V
Collector-Emitter Breakdown Voltage BVCEO I
C=1mA 25 V
Emitter-Base Breakdown Voltage BVEBO I
E=10µA 3 V
Collector-Emitter Saturation Voltage VCE(SAT) IC=4mA, IB=400µA 500 mV
Base-Emitter on Voltage VBE(ON) VCE=10V, IC=4mA 950 mV
Collector Cut-off Current ICBO V
CB=25V 100 nA
Emitter Cut-off Current IEBO V
EB=2V 100 nA
DC Current Gain hFE V
CE=10V, IC=4mA 60
Output Capacitance Cob V
CB=10V, f=1MHZ 0.7 pF
Current Gain Bandwidth Product fT V
CE=10V, IC=4mA, f=100MHz 650 MHz
CLASSIFICATION OF hFE
RANK A B C
RANGE 60-100 90-130 120-200
MMBTH10 NPN SILICON TRANSISTOR
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TYPICAL CHARACTERISTICS
Typical Pulsed Current Gain, hFE
Collector-Emitter Voltage, VCE(SAT) (V)
Base Emitter Voltage, VBE(SAT) (V)
Base Emitter On Voltage, VBE(ON)(V)
Collector Current, ICBO (nA)
Power Dissipation, PD(mW)
MMBTH10 NPN SILICON TRANSISTOR
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TYPICAL CHARACTERISTICS(Cont.)
12
0
100 1000
Output Admittance
200 500
6
VCE=10V
IC=5mA
10
8
4
2
gob
bob
120
-120
01000
Input Admittance
200 500
0
80
40
-40
-80
gib
bib
Input Admittance, |Yib| (mmhos)
Frequency, f (MHz)
Output Admittance, |Yob| (mmhos)
Frequency, f (MHz)
VCE=10V
IC=5mA
120
-120
01000
Forward Transfer Admittance
200 500
0
80
40
-40
-80
gfb
bfb
8
0
01000
Reverse Transfer Admittan
200 500
6
4
2
-grb
-brb
Forward Admittance, |Yfb| (mmhos)
Frequency, f (MHz) Frequency, f (MHz)
Reverse Admittance, |Yrb| (mmhos)
24
0
01000
Input Admittance
200 500
12
VCE=10V
20
16
8
4
Ic=2mA
gie
bie
6
0
01000
Output Admittance
200 500
3
VCE=10V
5
4
2
1
Ic=2mA
boe
goe
Input Admittance, |Yie| (mmhos)
Frequency, f (MHz) Frequency, f (MHz)
Output Admittance, |Yoe| (mmhos)
VCE=10V
IC=5mA
VCE=10V
IC=5mA
MMBTH10 NPN SILICON TRANSISTOR
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TYPICAL CHARACTERISTICS(Cont.)
Rorward Admittance, |Yfe| (mmhos)
Reverse Admittance, |Yre| (mmhos)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.