SOT323 NPN SILICON PLANAR
RF TRANSISTORS
ISSUE 1 – DECEMBER 1998
PARTMARKING DETAIL — ZUMTS17 - T4
ZUMTS17H - T4H
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 25 V
Collector-Emitter Voltage VCEO 15 V
Emitter-Base Voltage VEBO 2.5 V
Peak Pulse Current ICM 50 mA
Continuous Collector Current IC25 mA
Power Dissipation at Tamb
=25°C Ptot 330 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector Cut-Off
Current
ICBO 10
10
nA
µA
VCB
=10V, IE=0
VCB
=10V, IE=0,
Tamb
= 100°C
Static Forward Current
Transfer Ratio
hFE 25
20
150
125
IC=2.0mA, VCE
=1.0V
IC=25mA, VCE
=1.0V
ZUMTS17H 70 200 IC=2.0mA, VCE
=1.0V
Transition
Frequency
fT1.0
1.3
GHz
GHz
IC=2.0mA, VCE
=5.0V
f=500MHz
IC=25mA, VCE
=5.0V
f=500MHz
Feedback Capacitance -Cre 0.85 pF IC=2.0mA, VCE
=5V, f=1MHz
Collector Capacitance CTc 1.5 pF IE=Ie=0, VCB
=10V,
f=1MHz
Emitter Capacitance CTe 2.0 pF IC=Ic=0, VEB
=5.0V,
f=1MHz
Noise Figure N 4.5 dB IC=2.0mA, VCE
=5.0V
RS=50Ω, f=500MHz
Intermodulation
Distortion
dim -45 dB IC=10mA, VCE
=6.0V
RL=37.5Ω,Tamb
=25°C
Vo=100mV at fp=183MHz
Vo=100mV at fq=200MHz
measured at f(2q-p)
=217MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
ZUMTS17
ZUMTS17H
3 -
TYPICAL CHARACTERISTICS
f
T
v I
C
I
C
- Collector Current (mA)
f
T
- (GHz)
1µ10µ10m
100µ1m
I
C
- Collector Current (A)
h
FE
v I
C
h
FE
- Normalised Gain
20
40
60
80
1000.1
f=400MHz
1000
1
2
3
V
CE
- (V)
C
RE
v V
CE
C
RE
- (pF)
0
10 20 30
0.5
1.0
1.5
2.0
VCE=10V
0110
VCE=10V
VCE=5V
100m
f=1MHz
ZUMTS17
ZUMTS17H
