PRLL5817,115 - NXP Semiconductors / Philips Semiconductors

DATA SH EET

Product data sheet

Supersedes data of 1996 May 03

1999 Apr 22

DISCRETE SEMICONDUCTORS

PRLL5817; PRLL5818; PRLL5819

Schottky barrier diodes

alfpage

M3D121

1999 Apr 22 2

NXP Semiconductors Product data sheet

Schottky barrier diodes PRLL5817; PRLL5818;

PRLL5819

FEATURES

•Low switching losses

•Fast recovery time

•Guard ring protected

•Hermetically se aled glass SMD

package.

APPLICATIONS

•Low power, switched-mode power

supplies

•Rectifying

•Polarity protection.

DESCRIPTION

The PRLL5817 to PRLL5819 types

are Schottky barrier diodes fabricated

in planar technology, and

encapsulated in SOD87 hermetically

sealed glass SMD packages

incorporating ImplotecTM(1)

technology.

(1) Implotec is a trademark of Philips.

MARKING

TYPE NUMBER MARKING CODE

PRLL5817 9

PRLL5818 9

PRLL5819 9

Fig.1 Simplified outline (SOD87) and symbol.

handbook, halfpage

MAM190

1999 Apr 22 3

NXP Semiconductors Pr oduct data shee t

Schottky barrier diodes PRLL5817; PRLL5818;

PRLL5819

LIMITING VALUES

In accordance with the Absolute Maximum Ratin g S ystem (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VRcontinuous revers e voltage

PRLL5817 −20 V

PRLL5818 −30 V

PRLL5819 −40 V

VRSM non-repetitive pea k re verse voltage

PRLL5817 −24 V

PRLL5818 −36 V

PRLL5819 −48 V

VRRM repetitive peak reverse voltage

PRLL5817 −20 V

PRLL5818 −30 V

PRLL5819 −40 V

VRWM crest working reverse voltage

PRLL5817 −20 V

PRLL5818 −30 V

PRLL5819 −40 V

IF(AV) average forward current Tamb = 60 °C−1 A

IFSM non-repetitive peak forward current t = 10 ms half sine wave;

Tj = Tj max prior to surge: VR = 0 −25 A

Tstg storage temperature −65 +175 °C

Tjjunction temperature −125 °C

1999 Apr 22 4

NXP Semiconductors Pr oduct data shee t

Schottky barrier diodes PRLL5817; PRLL5818;

PRLL5819

ELECTRICAL CHARACTERISTIC S

Tamb = 25 °C unless otherwise specified.

Note

1. Pulse test: tp = 300 μs; δ = 0.02.

THERMAL CHARACTE RISTICS

Note

1. Refer to SOD87 standard mounting conditions.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VFforward voltage see Fig.2

PRLL5817 IF = 0.1 A −−320 mV

IF = 1 A −−450 mV

IF = 3 A −−750 mV

VFforward voltage see Fig.2

PRLL5818 IF = 0.1 A −−330 mV

IF = 1 A −−550 mV

IF = 3 A −−875 mV

VFforward voltage see Fig.2

PRLL5819 IF = 0.1 A −−340 mV

IF = 1 A −−600 mV

IF = 3 A −−900 mV

IRreverse current VR = VRRMmax; note 1 −0.5 1mA

VR = VRRMmax; Tj = 100 °C −510 mA

Cddiode capacitan ce VR = 4 V; f = 1 MHz

PRLL5817 −70 −pF

PRLL5818 −50 −pF

PRLL5819 −50 −pF

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient note 1 150 K/W

1999 Apr 22 5

NXP Semiconductors Pr oduct data shee t

Schottky barrier diodes PRLL5817; PRLL5818;

PRLL5819

GRAPHICAL DATA

handbook, halfpage

MBE634

0.5 VF (V)

(A) Tj = 125 oC25 oC

Fig.2 Typical forward voltage .

Fig.3 PRLL817. Maximum values steady state forw ard power dissipation as a fun ction of the av erage forward

current; a = IF(RMS)/IF(AV).

00 0.5 1.5

MBE642

(W)

0.5

F(AV)

IF(AV) (A)

a = 3 2.5 1.57 1.42 1

1999 Apr 22 6

NXP Semiconductors Pr oduct data shee t

Schottky barrier diodes PRLL5817; PRLL5818;

PRLL5819

Fig.4 PRLL5818. Maximum values steady state for ward power dissipation as a function of the avera ge forward

current; a = IF(RMS)/IF(AV).

00 0.5 1.5

MBE641

(W)

0.5

F(AV)

IF(AV) (A)

a = 3 2.5 1.57 1.42 12

Fig.5 PRLL5819. Maximum values steady state for ward power dissipation as a function of the avera ge forward

current; a = IF(RMS)/IF(AV).

00 0.5 1.5

MBE643

(W)

0.5

F(AV)

IF(AV) (A)

a = 3 2.5 1.57 1.42 12

1999 Apr 22 7

NXP Semiconductors Pr oduct data shee t

Schottky barrier diodes PRLL5817; PRLL5818;

PRLL5819

Fig.6 PRLL5817. Maximum permissible junction

temperature as a function of reverse voltage;

device mounted; refer to SOD87 standard

mounting conditions.

200

MBE635

100

10 VR (V)

(

oC) VRWM

δ = 0.2

δ = 0.5

Fig.7 PRLL5817. Reverse power dissipation as a

function of revers e voltage (max. values);

device mounted; refer to SOD87 standard

mounting conditions.

0.1

MBE640

0.05

10 VR (V)

(

VRWM

VRδ = 0.5 δ = 0.2

Fig.8 PRLL5818. Maximum permissible junction

temperature as a function of reverse voltage;

device mounted; refer to SOD87 standard

mounting conditions.

200

MBE636

100

20 VR (V)

(

oC) VRWM

δ = 0.2

δ = 0.5

Fig.9 PRLL5818. Reverse power dissipation as a

function of revers e voltage (max. values);

device mounted; refer to SOD87 standard

mounting conditions.

0.1

MBE638

0.05

20 VR (V)

(

VRWM

VRδ = 0.5 δ = 0.2

1999 Apr 22 8

NXP Semiconductors Pr oduct data shee t

Schottky barrier diodes PRLL5817; PRLL5818;

PRLL5819

Fig.10 PRLL5819. Maximum permissible junction

temperature as a function of reverse voltage;

device mounted; refer to SOD87 standard

mounting conditions.

200

MBE637

100

10 VR (V)

(

oC) VRWM

δ = 0.2

δ = 0.5

Fig.11 PRLL5819 . Reverse power di ssipation as a

function of revers e voltage (max. values);

device mounted; refer to SOD87 standard

mounting conditions.

0.1

MBE639

0.05

20 VR (V)

(

VRWM

VRδ = 0.5 δ = 0.2

1999 Apr 22 9

NXP Semiconductors Pr oduct data shee t

Schottky barrier diodes PRLL5817; PRLL5818;

PRLL5819

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

SOD87 100H03 99-03-31

99-06-04

Hermetically sealed glass surface mounted package;

ImplotecTM(1) technology; 2 connectors SOD8

UNIT D

mm 2.1

2.0 2.0

1.8 3.7

3.3 0.3

D1 HL

DIMENSIONS (mm are the original dimensions) H

DD1

(2)

0 1 2 mm

scale

Notes

1. Implotec is a trademark of Philips.

2. The marking indicates the cathode.

1999 Apr 22 10

NXP Semiconductors Product data sheet

Schottky barrier diodes PRLL5817; PRLL5818;

PRLL5819

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document befor e initiating or co mpleting a design.

2. The product s ta tus of device(s) described in this do cument may have ch anged since this docu ment was published

and may differ in case of multiple devices. The latest product status information is available on th e Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the produc t specification.

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Printed in The Netherlands 115002/00/02/pp11 Date of release: 1999 Apr 22 Document orde r number: 9397 750 05474