IRGPS40B120UDP
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features VCES = 1200V
VCE(on) typ. = 3.12V
@ VGE = 15V,
ICE = 40A, Tj=25°C
11/19/04
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 1200 V
IC @ TC = 25°C Continuous Collector Current 80
IC @ TC = 100°C Continuous Collector Current 40
ICM Pulsed Collector Current 160 A
ILM Clamped Inductive Load Current160
IF @ TC = 25°C Diode Continuous Forward Current 80
IF @ TC = 100°C Diode Continuous Forward Current 40
IFM Diode Maximum Forward Current 160
VGE Gate-to-Emitter Voltage ± 20 V
PD @ TC = 25°C Maximum Power Dissipation 595
PD @ TC = 100°C Maximum Power Dissipation 238
TJOperating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
• Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Super-247 Package.
• Lead-Free
Benefits
W
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• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Significantly Less Snubber Required
• Excellent Current Sharing in Parallel Operation.
E
G
C
N-channel
Parameter Min. Typ. Max. Units
RθJC Junction-to-Case - IGBT ––– ––– 0.20
RθJC Junction-to-Case - Diode ––– ––– 0.83 °C/W
RθCS Case-to-Sink, flat, greased surface ––– 0.24 –– –
RθJA Junction-to-Ambient, typical socket mount ––– ––– 40
Recommended Clip Force 20 (2) ––– ––– N(kgf)
Wt Weight ––– 6.0 (0.21) ––– g (oz)
Le Internal Emitter Inductance (5mm from package) ––– 13 ––– nH
Thermal Resistance
Super-247™
UltraFast Co-Pack IGBT
PD- 95967
IRGPS40B120UDP
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Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Ref.Fig.
5, 6
7, 9
10
11
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 ––– ––– V VGE = 0V, IC = 500µA
∆V(BR)CES/∆TJTemperature Coeff. of Breakdown Voltage ––– 0.40 ––– V/°C VGE = 0V, IC = 1.0mA, (25°C-125°C)
VCE(on) Collector-to-Emitter Saturation Voltage ––– 3.12 3.40 IC = 40A VGE = 15V
––– 3.39 3.70 V IC = 50A
––– 3.88 4.30 IC = 40A, TJ = 125°C
––– 4.24 4.70 IC = 50A, TJ = 125°C
VGE(th) Gate Threshold Voltage 4.0 5 .0 6.0 VCE = VGE, I C = 250µA
∆VGE(th)/∆TJTemperature Coeff. of Threshold Voltage –– – -12 ––– mV/°C VCE = VGE, IC = 1.0mA, (25°C-125°C)
gfe Forward Transconductance ––– 30.5 ––– S VCE = 50V, IC = 40A, PW=80µs
ICES Zero Gate Voltage Collector Current ––– ––– 500 µA V GE = 0V, VCE = 1200V
––– 420 1200 VGE = 0V, V CE = 1200V, TJ = 125°C
VFM Diode Forward Voltage Drop ––– 2.03 2.40 IC = 40A
––– 2.17 2.60 V IC = 50A
––– 2.26 2.68 IC = 40A, TJ = 125°C
––– 2.46 2.95 IC = 50A, TJ = 125°C
IGES Gate-to-Emitter Leakage Current ––– ––– ±100 nA V GE = ±20V
9,10
11 ,12
8
Ref.Fig.
Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) –– – 34 0 5 1 0 IC = 40A
Qge Gate - Emitter Charge (turn-on) ––– 40 60 nC VCC = 600V
Qgc Gate - Collector Charge (turn-on) ––– 1 65 248 VGE = 15V
Eon Turn-On Switching Loss ––– 1400 1750 µJ IC = 40A, VCC = 600V
Eoff Turn-Off Switching Loss ––– 1650 2050 VGE = 15V,RG = 4.7 Ω, L =200µH
Etot Total Switching Loss ––– 3050 3800 Ls = 150nH TJ = 25°C
Eon Turn-On Switching Loss – – – 1950 2300 TJ = 125°C
Eoff Turn-Off Switching Loss ––– 2200 2950 µJ Energy losses include "tail" and
Etot Total Switching Loss ––– 4150 5250 diode reverse recovery.
td(on) Turn-On Delay Time ––– 76 99 IC = 40A, VCC = 600V
trRise Time ––– 39 55 VGE = 15V, RG = 4.7Ω L =200µH
td(off) Turn-Off Delay Time – –– 332 365 ns Ls = 150nH, TJ = 125°C
tfFall Time ––– 25 33
Cies Input Capacitance ––– 4300 ––– VGE = 0V
Coes Output Capacitance ––– 33 0 ––– pF VCC = 30V
Cres Reverse Transfer Capacitance ––– 160 ––– f = 1.0MHz
TJ = 150°C, IC = 160A, Vp =1200V
VCC = 1000V, VGE = +15V to 0V
RG = 4.7Ω
TJ = 150°C, Vp =1200V
VCC = 900V, VGE = +15V to 0V,
RG = 4.7Ω
Erec Reverse Recovery energy of the diode ––– 3346 ––– µJ TJ = 125°C
trr Diode Reverse Recovery time ––– 1 80 ––– ns VCC = 600V, IF = 60A, L =200µH
Irr Diode Peak Reverse Recovery Current ––– 50 ––– A VGE = 15V,RG = 4.7Ω, Ls = 150nH
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
23
CT1
CT4
WF1
WF2
13,15
14, 16
CT4
WF1
WF2
22
4
CT2
CT3
WF4
17,18,19
20, 21
CT4,WF3
RBSOA Reverse Bias Safe Operting Area FULL SQUARE
SCSOA Short Circuit Safe Operting Area 10 ––– ––– µs
IRGPS40B120UDP
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Fig. 1 - Maximum DC Collector Current vs.
Case Temperature Fig. 2 - Power Dissipation vs. Case
Temperature
Fig. 3 - Forward SOA
TC = 25°C; TJS ≤ 150°C Fig. 4 - Reverse Bias SOA
TJ = 150°C; VGE =15V
0 20 40 60 80 100 120 140 16
0
TC (°C)
0
20
40
60
80
100
IC (A)
0 50 100 150 200
TC (°C)
0
100
200
300
400
500
600
700
Ptot (W)
1 10 100 1000 10000
VCE (V)
0.1
1
10
100
1000
IC (A)
2 µs
10 µs
100 µs
1ms
10ms
DC
10 100 1000 10000
VCE (V)
1
10
100
1000
IC A)
IRGPS40B120UDP
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Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80µs
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 125°C; tp = 80µs
0123456
VCE (V)
0
20
40
60
80
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0123456
VCE (V)
0
10
20
30
40
50
60
70
80
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0123456
VCE (V)
0
10
20
30
40
50
60
70
80
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
01234
VF (V)
0
10
20
30
40
50
60
70
80
IF (A)
-40°C
25°C
125°C
IRGPS40B120UDP
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Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
Fig. 11 - Typical VCE vs. VGE
TJ = 125°C Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
5101520
VGE (V)
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 20A
ICE = 40A
ICE = 80A
5101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 20A
ICE = 40A
ICE = 80A
5101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 20A
ICE = 40A
ICE = 80A
0 5 10 15 20
VGE (V)
0
50
100
150
200
250
300
350
400
450
500
ICE (A)
TJ = 25°C
TJ = 125°C
TJ = 125°C
TJ = 25°C
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Fig. 14 - Typ. Switching Time vs. IC
TJ = 125°C; L=200µH; VCE= 600V
RG= 4.7Ω; VGE= 15V
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 125°C; L=200µH; VCE= 600V
RG= 4.7Ω; VGE= 15V
Fig. 16 - Typ. Switching Time vs. RG
TJ = 125°C; L=200µH; VCE= 600V
ICE= 40A; VGE= 15V
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 125°C; L=200µH; VCE= 600V
ICE= 40A; VGE= 15V
0 20406080
IC (A)
0
500
1000
1500
2000
2500
3000
3500
4000
4500
Energy (µJ)
EOFF
EON
20 40 60 80
IC (A)
10
100
1000
Swiching Time (ns)
tR
tdOFF
tF
tdON
0 5 10 15 20 25
RG (Ω)
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
Energy (µJ)
EON
EOFF
0 5 10 15 20 25
RG (Ω)
10
100
1000
Swiching Time (ns)
tR
tdOFF
tF
tdON
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Fig. 17 - Typical Diode IRR vs. IF
TJ = 125°C Fig. 18 - Typical Diode IRR vs. RG
TJ = 125°C; IF = 40A
Fig. 20 - Typical Diode QRR
VCC= 600V; VGE= 15V;TJ = 125°C
Fig. 19- Typical Diode IRR vs. diF/dt
VCC= 600V; VGE= 15V;
ICE= 40A; TJ = 125°C
020 40 60 80 100
IF (A)
0
10
20
30
40
50
60
IRR (A)
RG = 4.7Ω
RG =22 Ω
RG =47 Ω
RG =100 Ω
050 100 150
RG (Ω)
0
10
20
30
40
50
60
IRR (A)
0500 1000 1500
diF /dt (A/µs)
0
10
20
30
40
50
60
IRR (A)
0 500 1000 1500
diF /dt (A/µs)
0
1
2
3
4
5
6
7
8
9
QRR (µC)
4.7Ω
22Ω
47 Ω
100Ω
80A
40A
20A
IRGPS40B120UDP
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Fig. 21 - Typical Diode ERR vs. IF
TJ = 125°C
Fig. 23 - Typical Gate Charge vs. VGE
ICE = 40A; L = 600µH
Fig. 22- Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
020 40 60 80 100
IF (A)
0
500
1000
1500
2000
2500
3000
3500
Energy (µJ)
4.7Ω
22Ω
47Ω
100Ω
020 40 60 80 100
VCE (V)
10
100
1000
10000
Capacitance (pF)
Cies
Coes
Cres
0 100 200 300 400
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VGE (V)
600V
800V
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Fig 25. Normalized Transient Thermal Impedance, Junction-to-Case (DIODE)
Fig 24. Normalized Transient Thermal Impedance, Junction-to-Case (IGBT)
1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005 0.0001 0.001 0.01 0.1 110
t1 , Rectangular Pulse Durat ion (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
IRGPS40B120UDP
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L
Rg
80 V DUT
1000V
Fig.C.T.1 - Gate Charge Circuit (turn-on) Fig.C.T.2 - RBSOA Circuit
1K
VCC
DUT
0
L
Fig.C.T.3 - RBSOA Circuit Fig.C.T.4 - RBSOA Circuit
Fig.C.T.5 - RBSOA Circuit
D
C
Driver
DUT
900V
L
Rg
VCC
diode clamp /
DUT
DUT /
DRIVER
- 5V
Rg
VCC
DUT
R =
V
CC
I
CM
IRGPS40B120UDP
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Fig. WF.1 - Typ. Turn-off Loss W aveform
@ Tj =12 5° C usi n g Fi g. CT.4
-100
0
100
200
300
400
500
600
700
800
900
1000
1100
-0.20 0.00 0.20 0.40 0.60 0.80
Time(µs)
V
CE
(V )
-10
0
10
20
30
40
50
I
CE
(A)
90% I
CE
5% V
CE
5% I
CE
Eof f Loss
tf
Fig. W F. 2 - Typ. Turn-on Loss W aveform
@ Tj= 125C usi ng Fi g. CT.4
-100
0
100
200
300
400
500
600
700
800
900
4.10 4.20 4.30 4.40 4.50 4.60
Time (µs)
V
CE
(V)
-10
0
10
20
30
40
50
60
70
80
90
I
CE
(A)
TE ST CURRENT
90% test current
5% V
CE
10% test current
Fig. WF . 3 - T yp. Diode Recovery
Waveform
@Tj = 125°C us ing F ig. CT.4
-800
-700
-600
-500
-400
-300
-200
-100
0
100
200
300
-0.25 0.25 0.75
time (µS)
V
F
(V )
-60
-50
-40
-30
-20
-10
0
10
20
30
40
50
I
F
(A)
Peak
I
RR
t
RR
Q
RR
10%
Peak
IRR
Fig. WF.4 - Typ. S.C. Waveform
@ TC=150°C usi ng Fig. CT.3
0
100
200
300
400
500
600
700
800
900
1000
-5.00 0.00 5.00 10.00 15.00
time (µS)
V
CE
(V)
0
50
100
150
200
250
300
350
400
450
500
I
CE
(A)
V
CE
I
CE
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Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/04
VCC = 80% (VCES), VGE = 20V, L = 100 µH, RG = 4.7Ω.
ASSEMBLY LOT CODE
TOP
EXAMPLE: THIS IS AN IRFPS37N50A WITH
ASSEMBLY LOT CODE 1789
INTERNATIONAL RECTIFIER
LOGO
89
IRFPS37N50A
17
PART NUMBER
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
Note: "P" i n assembly line position
indicates "Lead-Free"
719C DATE CODE
YEAR 7 = 1997
WEEK 19
LINE C
Case Outline and Dimensions — Super-247
Super-247 (TO-274AA) Part Marking Information
