BCX19L - ON Semiconductor

 Semiconductor Components Industries, LLC, 2004

December, 2004 − Rev. 3 1Publication Order Number:

BCX17LT1/D

BCX17LT1, BCX18LT1, PNP

BCX19LT1, NPN

General Purpose

Transistors

(Voltage and Current are Negative

for PNP Transistors)

Features

•Pb−Free Package is Available

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage

BCX17LT1, BCX19LT1

BCX18LT1

VCEO 45

Vdc

Collector−Base Voltage

BCX17LT1, BCX19LT1

BCX18LT1

VCBO 50

Vdc

Emitter−Base Voltage VEBO 5.0 Vdc

Collector Current − Continuous IC500 mAdc

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR−5 Board

(Note 1), TA = 25°C

Derate above 25°C

PD225

1.8

mW/°C

Thermal Resistance,

Junction−to−Ambient RJA 556 °C/W

Total Device Dissipation Alumina

Substrate, (Note 2) TA = 25°C

Derate above 25°C

PD300

2.4 mW

mW/°C

Thermal Resistance,

Junction−to−Ambient RJA 417 °C/W

Junction and Storage Temperature TJ, Tstg −55 to +150 °C

1. FR−5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in 99.5% alumina.

SOT−23

CASE 318

STYLE 6

MARKING DIAGRAM

xxM

COLLECTOR

BASE

EMITTER

COLLECTOR 3

BASE

2 EMITTER

PNP

NPN

xx = T1, T2, or U1

M = Date Code

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

http://onsemi.com

BCX17LT1, BCX18LT1, PNP BCX19LT1, NPN

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(IC = 10 mAdc, IB = 0) BCX17, 19

BCX18

V(BR)CEO 45

25 −

−−

−

Vdc

Collector−Emitter Breakdown Voltage

(IC = 10 Adc, IC = 0) BCX17, 19

BCX18

V(BR)CES 50

30 −

−−

−

Vdc

Collector Cutoff Current

(VCB = 20 Vdc, IE = 0)

(VCB = 20 Vdc, IE = 0, TA = 150°C)

ICBO −

−−

−100

5.0 nAdc

Adc

Emitter Cutoff Current

(VEB = 5.0 Vdc, IC = 0) IEBO − − 10 Adc

ON CHARACTERISTICS

DC Current Gain

(IC = 100 mAdc, VCE = 1.0 Vdc)

(IC = 300 mAdc, VCE = 1.0 Vdc)

(IC = 500 mAdc, VCE = 1.0 Vdc)

hFE 100

−

600

−

Collector−Emitter Saturation Voltage

(IC = 500 mAdc, IB = 50 mAdc) VCE(sat) − − 0.62 Vdc

Base−Emitter On Voltage

(IC = 500 mAdc, VCE = 1.0 Vdc) VBE(on) − − 1.2 Vdc

ORDERING INFORMATION

Device Marking Package Shipping†

BCX17LT1 T1 SOT−23 3,000 Tape & Reel

BCX17LT1G T1 SOT−23

(Pb−Free) 3,000 Tape & Reel

BCX17LT3 T1 SOT−23 10,000 Tape & Reel

BCX18LT1 T2 SOT−23 3,000 Tape & Reel

BCX19LT1 U1 SOT−23 3,000 Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

BCX17LT1, BCX18LT1, PNP BCX19LT1, NPN

http://onsemi.com

IC, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

hFE, DC CURRENT GAIN

1000

10000.1 10 100

100

1.0

VCE = 1 V

TJ = 25°C

IB, BASE CURRENT (mA)

Figure 2. Saturation Region

IC, COLLECTOR CURRENT (mA)

Figure 3. “On” Voltages

100

VR, REVERSE VOLTAGE (VOLTS)

Figure 4. Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

Figure 5. Capacitances

0.1 11 10 100 1000

−2

−1

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS

)

V, VOLTAGE (VOLTS)

V, TEMPERATURE COEFFICIENTS (mV/ C)°θ

C, CAPACITANCE (pF)

1.0

0.8

0.6

0.4

0.2

0.01 0.1 10 1001

1.0

0.8

0.6

0.4

0.2

1 10 1000100

10 100

TJ = 25°C

IC = 10 mA

TA = 25°CVBE(sat) @ IC/IB = 10

VBE(on) @ VCE = 1 V

VCE(sat) @ IC/IB = 10

VC for VCE(sat)

VB for VBE

Cob

Cib

100 mA 300 mA 500 mA

BCX17LT1, BCX18LT1, PNP BCX19LT1, NPN

http://onsemi.com

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AK

mm

inches

SCALE 10:1

0.8

0.031

0.9

0.035

0.95

0.037

0.95

0.037

2.0

0.079

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

STYLE 6:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

DIM

AMIN MAX MIN MAX

MILLIMETERS

0.1102 0.1197 2.80 3.04

INCHES

B0.0472 0.0551 1.20 1.40

C0.0350 0.0440 0.89 1.11

D0.0150 0.0200 0.37 0.50

G0.0701 0.0807 1.78 2.04

H0.0005 0.0040 0.013 0.100

J0.0034 0.0070 0.085 0.177

K0.0140 0.0285 0.35 0.69

L0.0350 0.0401 0.89 1.02

S0.0830 0.1039 2.10 2.64

V0.0177 0.0236 0.45 0.60

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH THICKNESS. MINIMUM LEAD

THICKNESS IS THE MINIMUM THICKNESS OF

BASE MATERIAL.

4. 318−01 THRU −07 AND −09 OBSOLETE, NEW

STANDARD 318−08.

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to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

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USA/Canada

Japan: ON Semiconductor, Japan Customer Focus Center

2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051

Phone: 81−3−5773−3850

BCX17LT1/D

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