N-Channel JFET
Low Noise Amplifier
2N4338 – 2N4341
FEATURES
••Exc ept i onal ly Hi gh Fi gur e of M erit
••Radiation Immunity
••Extr emely Low Noi se and Capacitan ce
••High Input Impeda nce
APPLICATIONS
••Low-level Ch oppers
••Data Swi tches
••Mul ti plexer s an d Low No ise Am pli fier s
ABSOLUTE M AXIM UM R A T INGS
(TA = 25oC unless o th erw ise noted)
Gate- Sour ce or Gate-Dr ain Voltage . . . . . . . . . . . . . . . . -50 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Stor age Temper at ure R a nge. . . . . . . . . . . . . -65oC t o +200oC
Oper at ing Temper atur e Ra nge . . . . . . . . . . . -55oC to +175 oC
Lead Tem peratu re (So ld er ing, 10se c). . . . . . . . . . . . . +300oC
Power Dissipat ion . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . 2. 0mW/oC
NOTE: Str esses above those listed under "Absolute Maximum
Ratings " may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating con ditions for extended per i ods may affect dev ice reliability.
ORDERING INFORMATION
Part Package Temperature Range
2N4338-41 Herm etic TO-18 -55oC to +175oC
X2N4338- 41 Sorte d Chips in Carrier s -55oC to +175oC
LLC
PIN CONFIGUR ATI O N
S
TO-18
G,C D
ELECTRICA L CHARACTERI STIC S (TA = 2 5oC unle ss other wise sp ecifie d)
SYMBOL PARAMETER 2N4338 2N4339 2N4340 2N4341 UNITS TEST CONDITIONS
MIN MAX MIN MAX MIN MAX MIN MAX
IGSS Gate Reverse Current -0.1 -0.1 -0.1 -0.1 nA VGS = -30V, VDS = 0
TA = 15 0oC -0.1 -0.1 -0.1 -0.1 µA
BVGSS Gate-Source Breakdown Voltage -50 -50 -50 -50 VIG = -1µA, VDS = 0
VGS(off) Gate-Source Cutoff Vo ltage -0.3 -1 -0.6 -1.8 -1 -3 -2 -6 VDS = 15V, ID = 0.1µA
ID(off) Drain Cutoff Current 0.05
(-5) 0.05
(-5) 0.05
(-5) 0.07
(-10) nA
(V) VDS = 15V,
VGS = ( )
IDSS Saturation Drain Current (Note 2) 0.2 0.6 0.5 1.5 1.2 3.6 3 9 mA VDS = 15V, VGS = 0
gfs Common-Source Forward
Transconductance (Note 2) 600 1800 800 2400 1300 3000 2000 4000 µSVDS = 15V,
VGS = 0 f = 1kHz
gos Common-Source Output Conductance 5 15 30 60
rDS(on) Drain-Source ON Resistance 2500 1700 1500 800 ohm VDS = 0, IDS = 0
Ciss Common-Source Input Capacitance 7777
pF VDS = 15V,
VGS = 0 (Note 1) f = 1MHz
Crss Common-Source Reverse Transf er
Capacitance 3333
NFNoise Figure (Note 1) 1111dB
VDS = 15V,
VGS = 0
Rgen = 1meg,
BW = 2 00Hz f = 1kHz
NOTES: 1. For design reference only, not 100% tested.
2. Pulse test duration 2ms (non-JEDEC Condition).
5010
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