/TechnicalInformation IGBT- IGBT-modules FZ1600R17KF6C_B2 1700VIGBTModulmitlowlossIGBTder2.tenGenerationundsofterEmitterControlledDiode 1700VIGBTModulewithlowlossIGBTof2ndgenerationandsoftEmitterControlledDiode IGBT- PreliminaryData /IGBT,Inverter /MaximumRatedValues Collector-emittervoltage Tvj = 25C Tvj = 125C VCES 1700 1700 V DC ContinuousDCcollectorcurrent TC = 80C, Tvj max = 150C TC = 25C, Tvj max = 150C IC nom IC 1600 2600 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 3200 A Totalpowerdissipation TC = 25C, Tvj max = 150C Ptot 12,5 kW Gate-emitterpeakvoltage VGES +/- 20 V /CharacteristicValues min. Collector-emittersaturationvoltage IC = 1600 A, VGE = 15 V IC = 1600 A, VGE = 15 V Gatethresholdvoltage IC = 130 mA, VCE = VGE, Tvj = 25C Gatecharge Tvj = 25C Tvj = 125C VCE sat A A typ. max. 2,60 3,10 3,10 3,60 V V VGEth 4,5 5,5 6,5 V VGE = -15 V ... +15 V QG 19,0 C Internalgateresistor Tvj = 25C RGint 0,66 Inputcapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 105 nF Reversetransfercapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 5,30 nF Collector-emittercut-offcurrent VCE = 1700 V, VGE = 0 V, Tvj = 25C ICES 0,04 3,0 mA Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA Turn-ondelaytime,inductiveload IC = 1600 A, VCE = 900 V VGE = 15 V RGon = 0,9 Tvj = 25C Tvj = 125C td on 0,30 0,30 s s Risetime,inductiveload IC = 1600 A, VCE = 900 V VGE = 15 V RGon = 0,9 Tvj = 25C Tvj = 125C tr 0,19 0,19 s s Turn-offdelaytime,inductiveload IC = 1600 A, VCE = 900 V VGE = 15 V RGoff = 0,9 Tvj = 25C Tvj = 125C td off 1,20 1,20 s s Falltime,inductiveload IC = 1600 A, VCE = 900 V VGE = 15 V RGoff = 0,9 Tvj = 25C Tvj = 125C tf 0,15 0,16 s s Turn-onenergylossperpulse IC = 1600 A, VCE = 900 V, LS = 50 nH VGE = 15 V RGon = 0,9 Tvj = 25C Tvj = 125C Eon 430 mJ mJ Turn-offenergylossperpulse IC = 1600 A, VCE = 900 V, LS = 50 nH VGE = 15 V RGoff = 0,9 Tvj = 25C Tvj = 125C Eoff 670 mJ mJ SCdata VGE 15 V, VCC = 1000 V VCEmax = VCES -LsCE *di/dt ISC Thermalresistance,junctiontocase IGBT/perIGBT RthJC Thermalresistance,casetoheatsink IGBT/perIGBT Paste=1W/(m*K)/grease=1W/(m*K) RthCH 13,0 Temperatureunderswitchingconditions Tvj op -40 preparedby:WB dateofpublication:2013-11-25 approvedby:DTS revision:2.1 1 tP 10 s, Tvj = 125C 6400 A 10,0 K/kW K/kW 125 C /TechnicalInformation IGBT- IGBT-modules FZ1600R17KF6C_B2 PreliminaryData Diode/Diode,Inverter /MaximumRatedValues Repetitivepeakreversevoltage Tvj = 25C Tvj = 125C DC ContinuousDCforwardcurrent Repetitivepeakforwardcurrent tP = 1 ms It-value VR = 0 V, tP = 10 ms, Tvj = 125C Minimumturn-ontime VRRM 1700 1700 V IF 1600 A IFRM 3200 A It 660 kAs ton min 10,0 s /CharacteristicValues min. typ. max. 2,10 2,10 2,50 2,50 V V 1400 1700 A A Qr 300 560 C C IF = 1600 A, - diF/dt = 9600 A/s (Tvj=125C) Tvj = 25C VR = 900 V Tvj = 125C VGE = -15 V Erec 210 380 mJ mJ Thermalresistance,junctiontocase /Diode/perdiode RthJC Thermalresistance,casetoheatsink /Diode/perdiode Paste=1W/(m*K)/grease=1W/(m*K) RthCH 22,0 Temperatureunderswitchingconditions Tvj op -40 preparedby:WB dateofpublication:2013-11-25 approvedby:DTS revision:2.1 Forwardvoltage IF = 1600 A, VGE = 0 V IF = 1600 A, VGE = 0 V Tvj = 25C Tvj = 125C VF Peakreverserecoverycurrent IF = 1600 A, - diF/dt = 9600 A/s (Tvj=125C) Tvj = 25C VR = 900 V Tvj = 125C VGE = -15 V IRM Recoveredcharge IF = 1600 A, - diF/dt = 9600 A/s (Tvj=125C) Tvj = 25C VR = 900 V Tvj = 125C VGE = -15 V Reverserecoveryenergy 2 17,0 K/kW K/kW 125 C /TechnicalInformation IGBT- IGBT-modules FZ1600R17KF6C_B2 PreliminaryData /Module Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. Internalisolation (1,IEC61140) basicinsulation(class1,IEC61140) Creepagedistance -/terminaltoheatsink -/terminaltoterminal Clearance -/terminaltoheatsink -/terminaltoterminal Comperativetrackingindex Thermalresistance,casetoheatsink //permodule Paste=1W/(m*K)/grease=1W/(m*K) Strayinductancemodule Moduleleadresistance,terminals-chip TC=25C,//perswitch Storagetemperature VISOL 4,0 kV AlN 17,0 mm 10,0 mm CTI > 275 min. typ. RthCH 8,00 LsCE 12 nH RCC'+EE' 0,19 m Tstg -40 125 C 4,25 - 5,75 Nm 1,8 - 2,1 Nm 8,0 - 10 Nm 1050 g Mountingtorqueformodulmounting M6 ScrewM6-Mountingaccordingtovalidapplicationnote M Terminalconnectiontorque M4 ScrewM4-Mountingaccordingtovalidapplicationnote M8 ScrewM8-Mountingaccordingtovalidapplicationnote M Weight G preparedby:WB dateofpublication:2013-11-25 approvedby:DTS revision:2.1 3 max. K/kW /TechnicalInformation IGBT- IGBT-modules FZ1600R17KF6C_B2 PreliminaryData IGBT- (Typical) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) VGE=15V IGBT- (Typical) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) Tvj=125C 3200 3200 Tvj = 25C Tvj = 125C 2800 2800 2000 2000 IC [A] 2400 IC [A] 2400 1600 1600 1200 1200 800 800 400 400 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VCE [V] 3,5 4,0 4,5 0 5,0 IGBT- (Typical) transfercharacteristicIGBT,Inverter(typical) IC=f(VGE) VCE=20V 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VCE [V] 3,5 4,0 4,5 5,0 IGBT- (Typical) switchinglossesIGBT,Inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=15V,RGon=0.9,RGoff=0.9,VCE=900V 3200 1600 Tvj = 25C Tvj = 125C 2800 2000 1000 IC [A] E [mJ] 1200 1600 800 1200 600 800 400 400 200 5 6 7 Eon, Tvj = 125C Eoff, Tvj = 125C 1400 2400 0 VGE = 8V VGE = 10V VGE = 15V VGE = 20V 8 9 VGE [V] 10 11 12 0 13 preparedby:WB dateofpublication:2013-11-25 approvedby:DTS revision:2.1 4 0 400 800 1200 1600 2000 2400 2800 3200 IC [A] /TechnicalInformation IGBT- IGBT-modules FZ1600R17KF6C_B2 PreliminaryData IGBT- (Typical) switchinglossesIGBT,Inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=15V,IC=1600A,VCE=900V IGBT- transientthermalimpedanceIGBT,Inverter ZthJC=f(t) 2500 100 Eon, Tvj = 125C Eoff, Tvj = 125C ZthJC : IGBT 2000 10 E [mJ] ZthJC [K/kW] 1500 1000 1 500 i: 1 2 3 4 ri[K/kW]: 0,94 4,72 1,425 2,92 i[s]: 0,027 0,052 0,09 0,838 0 0 1 2 3 4 5 6 0,1 0,001 7 0,01 0,1 RG [] 1 10 100 t [s] IGBT- RBSOA) reversebiassafeoperatingareaIGBT,Inverter(RBSOA) IC=f(VCE) VGE=15V,RGoff=0.9,Tvj=125C Diodetypical) forwardcharacteristicofDiode,Inverter(typical) IF=f(VF) 3500 3200 IC, Chip IC, Modul Tvj = 25C Tvj = 125C 2800 3000 2400 2500 2000 IF [A] IC [A] 2000 1600 1500 1200 1000 800 500 0 400 0 200 400 600 0 800 1000 1200 1400 1600 1800 VCE [V] preparedby:WB dateofpublication:2013-11-25 approvedby:DTS revision:2.1 5 0,0 0,5 1,0 1,5 VF [V] 2,0 2,5 3,0 /TechnicalInformation IGBT- IGBT-modules FZ1600R17KF6C_B2 PreliminaryData Diode(Typical) switchinglossesDiode,Inverter(typical) Erec=f(IF) RGon=0.9,VCE=900V Diode(Typical) switchinglossesDiode,Inverter(typical) Erec=f(RG) IF=1600A,VCE=900V 500 500 Erec, Tvj = 125C Erec, Tvj = 125C 300 300 E [mJ] 400 E [mJ] 400 200 200 100 100 0 0 400 800 0 1200 1600 2000 2400 2800 3200 IF [A] 100 ZthJC : Diode ZthJC [K/kW] 10 1 i: 1 2 3 4 ri[K/kW]: 7,85 3,53 1,12 4,52 i[s]: 0,0287 0,0705 0,153 0,988 0,01 0,1 1 10 1 2 3 4 RG [] Diode transientthermalimpedanceDiode,Inverter ZthJC=f(t) 0,1 0,001 0 100 t [s] preparedby:WB dateofpublication:2013-11-25 approvedby:DTS revision:2.1 6 5 6 7 /TechnicalInformation IGBT- IGBT-modules FZ1600R17KF6C_B2 PreliminaryData /circuit_diagram_headline /packageoutlines preparedby:WB dateofpublication:2013-11-25 approvedby:DTS revision:2.1 7 /TechnicalInformation IGBT- IGBT-modules FZ1600R17KF6C_B2 PreliminaryData (www.infineon.com) Terms&Conditionsofusage Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch application. 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