2SK2084(L), 2SK2084(S)
Silicon N-Channel MOS FET
ADE-208-1342 (Z)
1st. Edition
Mar. 2001
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device can be driven from 5 V source
• Suitable for Switching regulator, DC - DC converter
Outline
123
123
4
4
DPAK-2
1. Gate
2. Drain
3. Source
4. Drain
D
G
S
2SK2084(L), 2SK2084(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 20 V
Gate to source voltage VGSS ±20 V
Drain current ID7A
Drain peak current ID(pulse)*128 A
Body to drain diode reverse drain current IDR 7A
Channel dissipation Pch*220 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
2SK2084(L), 2SK2084(S)
3
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
voltage V(BR)DSS 20 — — V ID = 10 mA, VGS = 0
Gate to source breakdown
voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0
Gate to source leak current IGSS ——±10 µAV
GS = ±16 V, VDS = 0
Zero gate voltage drain current IDSS — — 100 µAV
DS = 16 V, VGS = 0
Gate to source cutoff voltage VGS(off) 1.0 — 2.5 V ID = 1 mA, VDS = 10 V
Static drain to source on state
resistance RDS(on) — 0.04 0.053 ΩID = 4 A
VGS = 10 V*1
— 0.058 0.075 ΩID = 4 A
VGS = 4 V*1
Forward transfer admittance |yfs| 5 9 — S ID = 4 A
VDS = 10 V*1
Input capacitance Ciss — 800 — pF VDS = 10 V
Output capacitance Coss — 680 — pF VGS = 0
Reverse transfer capacitance Crss — 165 — pF f = 1 MHz
Turn-on delay time td(on) — 15 — ns ID = 4 A
Rise time tr— 60 — ns VGS = 10 V
Turn-off delay time td(off) — 100 — ns RL = 5 Ω
Fall time tf—80—ns
Body to drain diode forward
voltage VDF — 0.9 — V IF = 7 A, VGS = 0
Body to drain diode reverse
recovery time trr — 80 — ns IF = 7 A, VGS = 0,
diF / dt = 20 A / µs
Note 1. Pulse Test
2SK2084(L), 2SK2084(S)
4
40
30
20
10
0
Channel Dissipation Pch (W)
50 100 150 200
Case Temperature Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
50
30
10
3
1
0.3
0.1
0.3 1 3 10 30
1 ms
Operation in
this area is
limited by RDS(on)
Ta = 25 °C
DC Operation
(Tc = 25 °C)
100 µs
10 µs
PW = 10 ms (1shot)
20
16
12
8
4
0246810
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Typical Output Characteristics
V = 2.5 V
GS
3.5 V
10 V
6 V
4 V
3 V
Pulse Test 20
16
12
8
4
0 12345
Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
V = 10 V
Pulse Test
DS
Typical Transfer Characteristics
Tc = 75 °C
25 °C
–25 °C
2SK2084(L), 2SK2084(S)
5
0.5
0.4
0.3
0.2
0.1
0246810
Gate to Source Voltage V (V)
GS
Pulse Test
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
2 A
1 A
I = 5 A
D
V (V)
DS(on)
Drain to Source Saturation Voltage
Drain Current I (A)
D
Drain to Source On State Resistance
R ( )
Ω
DS(on)
Static Drain to Source State Resistance
vs. Drain Current
0.2
0.1
0.02
0.05
0.01
0.1 0.2 0.5 1 2 5 10 20
10 V
V = 4 V
GS
Pulse Test
0.20
0.16
0.12
0.08
0.04
–40 0 40 80 120 160
Case Temperature Tc (°C)
0
R ( )
DS(on)
Static Drain to Source on State Resistance
Ω
Pulse Test
V = 4 V
GS
Static Drain to Source on State Resistance
vs. Temperature
10 V
5 A
1 A
2 A
1 A
2 A
5 A
0.1
Forward Transfer Admittance |yfs| (S)
Drain Current I (A)
D
Forward Transfer Admittance vs.
Drain Current
20
10
5
2
1
0.5 0.2 0.5 1 2 5 10
Tc = –25 °C
25 °C
75 °C
DS
V = 10 V
Pulse Test
2SK2084(L), 2SK2084(S)
6
Reverse Drain Current I (A)
DR
Reverse Recovery Time trr (ns)
Body to Drain Diode Reverse
Recovery Time
0.1 0.2 0.5 1 2 5 10
200
100
20
10
50
di / dt = 20 A / µs
V = 0, Ta = 25 °C
GS
10000
1000
100
10048121620
Capacitance C (pF)
Drain to Source Voltage V (V)
DS
Ciss
Coss
Crss
V = 0
f = 1 MHz
GS
Typical Capacitance vs.
Drain to Source Voltage
50
40
30
20
10
0 8 16 24 32 40
Gate Charge Qg (nc)
Drain to Source Voltage V (V)
DS
20
16
12
8
4
0
Gate to Source Voltage V (V)
GS
VGS
DS
V
Dynamic Input Characteristics
V = 20 V
10 V
5 V
DD
V = 20 V
10 V
5 V
DD
Drain Current I (A)
D
Switching Time t (ns)
Switching Characteristics
0.1 0.2 0.5 1 2 5 10
200
100
20
10
50
V = 10 V
V = 20 V
PW = 5 µs
duty < 1 %
GS
DD
tf
r
t
d(on)
t
d(off)
t
2SK2084(L), 2SK2084(S)
7
20
16
12
8
4
00.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V (V)
SD
Pulse Test
Reverse Drain Current I (A)
DR
V = 0, –5 V
GS
10 V 5 V
Reverse Drain Current vs.
Souece to Drain Voltage
3
1
0.3
0.1
0.03
0.01
10 µ 100 µ 1 m 10 m
Pulse Width PW (S)
Normalized Transient Thermal Impedance
100 m 1 10
s (t)
γ
DM
P
PW
T
D = PW
T
ch – c(t) = s (t) • ch – c
ch – c = 6.25 °C/W, Tc = 25 °C
θ γ θ
θ
D = 1
0.5
0.2
0.01
0.02
0.1
0.05
1 shot Pulse
Tc = 25°C
Normalized Transient Thermal Impedance vs. Pulse Width
2SK2084(L), 2SK2084(S)
8
Vin Monitor
D.U.T.
Vin
10 V
RL
V
= 20 V
DD
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
Vout
Monitor
50Ω
90%
10%
tf
Switching Time Test Circuit Waveform
2SK2084(L), 2SK2084(S)
9
Package Dimensions
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
DPAK (L)-(2)
—
—
0.42 g
6.5 ± 0.5 2.3 ± 0.2
0.55 ± 0.1
1.2 ± 0.3
0.55 ± 0.1
5.5 ± 0.5 1.7 ± 0.5
16.2 ± 0.5
4.7 ± 0.5
5.4 ± 0.5
1.15 ± 0.1
2.29 ± 0.5 2.29 ± 0.5
0.8 ± 0.1
0.55 ± 0.1
3.1 ± 0.5
(0.7)
As of January, 2001
Unit: mm
2SK2084(L), 2SK2084(S)
10
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
DPAK (S)-(1),(2)
—
Conforms
0.28 g
As of January, 2001
Unit: mm
6.5 ± 0.5
5.4 ± 0.5 2.3 ± 0.2
0.55 ± 0.1
0 – 0.25
0.55 ± 0.1
1.7 ± 0.5
5.5 ± 0.5
2.5 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
1.2 Max
(4.9)
(5.3)
2SK2084(L), 2SK2084(S)
11
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
DPAK (S)-(3)
—
Conforms
0.28 g
As of January, 2001
Unit: mm
6.5 ± 0.5
5.4 ± 0.5 2.3 ± 0.2
0.55 ± 0.1
0 – 0.25
0.55 ± 0.1
1.5 ± 0.5
5.5 ± 0.5
2.5 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
1.2 Max
(5.1)
(5.1)
(0.1)(0.1)
2SK2084(L), 2SK2084(S)
12
Cautions
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intellectual property rights, in connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
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consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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