Plastic Medium Power Silicon
NPN Transistor
. . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers
utilizing complementary or quasi complementary circuits.
•DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc
•BD179 is complementary with BD180
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Value
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage
ÎÎÎÎÎ
ÎÎÎÎÎ
VCEO
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
80
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Base Voltage
ÎÎÎÎÎ
ÎÎÎÎÎ
VCBO
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
80
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Voltage
ÎÎÎÎÎ
ÎÎÎÎÎ
VEBO
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
5.0
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current
ÎÎÎÎÎ
ÎÎÎÎÎ
IC
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
3.0
ÎÎÎ
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current
ÎÎÎÎÎ
ÎÎÎÎÎ
IB
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
1.0
ÎÎÎ
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎ
Total Device Dissipation @ TC = 25C
Derate above 25C
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
PD
ÎÎÎÎÎÎ
Î
ÎÎÎÎ
Î
ÎÎÎÎÎÎ
30
240
ÎÎÎ
Î
Î
Î
ÎÎÎ
Watts
mw/C
ÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction
Temperature Range
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
TJ, Tstg
ÎÎÎÎÎÎ
Î
ÎÎÎÎ
Î
ÎÎÎÎÎÎ
–65 to +150
ÎÎÎ
Î
Î
Î
ÎÎÎ
C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Case
ÎÎÎÎÎ
ÎÎÎÎÎ
θJC
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
4.16
ÎÎÎ
ÎÎÎ
C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Symbol
Min
Max
ÎÎÎÎ
ÎÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Sustaining Voltage*
(IC = 0.1 Adc, IB = 0)
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
V(BR)CEO
80
—
ÎÎÎÎ
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCB = 80 Vdc, IE = 0)
ÎÎÎÎÎÎ
Î
ÎÎÎÎ
Î
ÎÎÎÎÎÎ
ICBO
ÎÎ
—
ÎÎÎ
0.1
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
ÎÎÎÎÎÎ
Î
ÎÎÎÎ
Î
ÎÎÎÎÎÎ
IEBO
ÎÎ
—
ÎÎÎ
1.0
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
(IC = 0.15 A, VCE = 2.0 V) BD179–10
(IC = 1.0 A, VCE = 2.0 V) ALL
ÎÎÎÎÎÎ
Î
ÎÎÎÎ
Î
ÎÎÎÎÎÎ
hFE
ÎÎ
63
15
ÎÎÎ
160
—
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Saturation Voltage*
(IC = 1.0 Adc, IB = 0.1 Adc)
ÎÎÎÎÎÎ
Î
ÎÎÎÎ
Î
ÎÎÎÎÎÎ
VCE(sat)
ÎÎ
—
ÎÎÎ
0.8
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base–Emitter On Voltage*
(IC = 1.0 Adc, VCE = 2.0 Vdc)
ÎÎÎÎÎÎ
Î
ÎÎÎÎ
Î
ÎÎÎÎÎÎ
VBE(on)
ÎÎ
—
ÎÎÎ
1.3
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current–Gain – Bandwidth Product
(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
fT
3.0
—
ÎÎÎÎ
ÎÎÎÎ
MHz
*Pulse Test: Pulse Width 300 As, Duty Cycle 2.0%.
ON Semiconductor
Semiconductor Components Industries, LLC, 2002
April, 2002 – Rev. 10 1Publication Order Number:
BD179/D
BD179
BD179-10
3.0 AMPERES
POWER TRANSISTORS
NPN SILICON
80 VOLTS
30 WATTS
CASE 77–09
TO–225AA TYPE
*ON Semiconductor Preferred Device
321
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
BD179 BD179–10
http://onsemi.com
2
Figure 1. Active Region Safe Operating Area
10
2.0
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1 3.0 5.0 7.0 10 20 30 50 100
SECONDARY BREAKDOWN LIMITATION
THERMAL LIMITATION
(BASE-EMITTER DISSIPATION IS
SIGNIFICANT ABOVE IC = 2.0 AMP)
PULSE DUTY CYCLE < 10%
70
0.3
0.2
IC, COLLECTOR CURRENT (AMP)
TJ = 150°C
dc
5.0 ms
1.0
100 µs
1.0 ms
The Safe Operating Area Curves indicate IC – VCE limits
below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the
applicable Safe Area to avoid causing a catastrophic failure.
To insure operation below the maximum TJ,
power–temperature derating must be observed for both
steady state and pulse power conditions.
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS
)
Figure 2. Collector Saturation Region
IB, BASE CURRENT (mA)
1.0
00.2
0.8
0.6
0.4
0.2
1.0 2.0 10 30 50 200
IC = 0.1 A 0.25 A 1.0 A0.5 A
0.3 0.5 100203.0 5.0
TJ = 25°C
h
FE,
DC
CURRENT
GAIN
(NORMALIZED)
1000
Figure 3. Current Gain
IC, COLLECTOR CURRENT (mA)
10
100 TJ = + 150°C
TJ = + 55°C
VCE = 2.0 V
700
500
300
200
70
50
30
20
TJ = + 25°C
3.0 5.0 10 20 30 50 20002.0 100 200 1000300 500
Figure 4. “On” Voltages
0
1.5
3.0 5.0 10 20 30 50 20002.0 100 200 1000300 500
1.2
0.9
0.6
0.3
IC, COLLECTOR CURRENT (mA)
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VOLTAGE (VOLTS)
VBE @ VCE = 2.0 V
BD179 BD179–10
http://onsemi.com
3
Figure 5. Thermal Response
t, TIME or PULSE WIDTH (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02 0.03
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 1000500
θJC(t) = r(t) θJC
θJC = 4.16°C/W MAX
θJC = 3.5°C/W TYP
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) θJC(t)
P(pk)
t1t2
DUTY CYCLE, D = t1/t2
D = 0.5
SINGLE PULSE
D = 0.2
D = 0.1
D = 0.05
D = 0.01
BD179 BD179–10
http://onsemi.com
4
PACKAGE DIMENSIONS
CASE 77–09
ISSUE W
TO–225AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
–B–
–A– M
K
FC
Q
H
V
G
S
D
JR
U
132
2 PL
M
A
M
0.25 (0.010) B M
M
A
M
0.25 (0.010) B M
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.425 0.435 10.80 11.04
B0.295 0.305 7.50 7.74
C0.095 0.105 2.42 2.66
D0.020 0.026 0.51 0.66
F0.115 0.130 2.93 3.30
G0.094 BSC 2.39 BSC
H0.050 0.095 1.27 2.41
J0.015 0.025 0.39 0.63
K0.575 0.655 14.61 16.63
M5 TYP 5 TYP
Q0.148 0.158 3.76 4.01
R0.045 0.065 1.15 1.65
S0.025 0.035 0.64 0.88
U0.145 0.155 3.69 3.93
V0.040 --- 1.02 ---

STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
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