12001-07-25
SPP02N60S5
SPB02N60S5
Preliminary data
Cool MOS™=
==
=Power Transistor
•=New revolutionary high voltage technology
• Ultra low gate charge
•=Periodic avalanche rated
• Extreme dv/dt rated
•=Optimized capacitances
•=Improved noise immunity
•=Former development designation:
SPPx5N60S5/SPBx5N60S5
C
Power Se mi con ducto r s
OO LMOS
Product Summary
VDS @ T
j
max 650 V
RDS
(
on
)
3Ω
ID1.8 A
P-TO263-3-2 P-TO220-3-1
G,1
D,2
S,3
Marking
02N60S5
02N60S5
Type Package Ordering Code
SPP02N60S5 P-TO220-3-1 Q67040-S4181
SPB02N60S5 P-TO263-3-2 Q67040-S4212
Maximum Ratings,at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
TC=25°C
TC=100°C
ID
1.8
1.1
A
Pulsed drain current 1)
TC=25°C
ID puls 3.2
Avalanche energy, single pulse
ID = 1.44 A, VDD = 50 V EAS 50 mJ
Avalanche energy (repetitive, limited by Tjmax)
ID = 1.8 A , VDD = 50 V EAR 0.07
Avalanche current (repetitive, limited by T
j
max)I
A
R1.8 A
Reverse diode dv/dt
IS=1.8A, VDS<VDSS, di/dt=100A/µs, Tjmax=150°C
dv/dt6 kV/µs
Gate source voltage VGS ±20 V
Power dissipation
TC=25°C
Ptot 25 W
Operating and storage temperature T
j
, Tst
g
-55... +150 °C
22001-07-25
SPP02N60S5
SPB02N60S5
Preliminary data
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Thermal Characteristics
Thermal resistance, junction - case RthJC - - 5 K/W
Thermal resistance, junction - ambient
(Leaded and through-hole packages) RthJA --62
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 2)
RthJA
-
-
-
35
62
-
Static Characteristics, at T
j
= 25 °C, unless otherwise specified
Drain-source breakdown voltage
VGS = 0 V, ID = 0.25 mA V(BR)DSS 600 - - V
Gate threshold voltage, VGS = VDS
ID = 80 µA, Tj = 25 °C VGS(th) 3.5 4.5 5.5
Zero gate voltage drain current, VDS=VDSS
VGS = 0 V, Tj = 25 °C
VGS = 0 V, Tj = 150 °C
IDSS
-
-
0.5
-
1
50
µA
Gate-source leakage current
VGS = 20 V, VDS = 0 V IGSS - - 100 nA
Drain-source on-state resistance
VGS = 10 V, ID = 1.1 A RDS(on) - 2.7 3 Ω
1current limited by Tjmax
2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm² (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.
32001-07-25
SPP02N60S5
SPB02N60S5
Preliminary data
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance gfs VDS≥2*ID*RDS(on)max ,
ID=1.1A
- 1.4 - S
Input capacitance Ciss VGS=0V, VDS=25V,
f=1MHz
- 240 - pF
Output capacitance Coss - 77 -
Reverse transfer capacitance Crss - 4.4 -
Turn-on delay time td
(
on
)
VDD=350V, VGS=10V,
ID=1.8A, RG=50Ω
- 35 - ns
Rise time tr- 35 -
Turn-off delay time td
(
off
)
- 35 52
Fall time t
- 20 30
Gate Charge Characteristics
Gate to source charge Q
g
sVDD=350V, ID=1.8A - 2.3 - nC
Gate to drain charge Q
g
d- 4.5 -
Total gate charge QgVDD=350V, ID=1.8A,
VGS=0 to 10V
- 7.3 9.5
Reverse Diode
Inverse diode continuous
forward current ISTC=25°C - - 1.8 A
Inverse diode direct
current,pulsed ISM - - 3.2
Inverse diode forward voltage VSD VGS=0V, IF=1.8A - 1 1.2 V
Reverse recovery time trr VR=350V, IF=lS,
diF/dt=100A/µs
- 860 1460 ns
Reverse recovery charge Qrr - 1.6 - µC
42001-07-25
SPP02N60S5
SPB02N60S5
Preliminary data
Power dissipation
Ptot = f (TC)
0 20 40 60 80 100 120 °C 160
TC
0
2
4
6
8
10
12
14
16
18
20
22
24
W
28 SPP02N60S5
Ptot
Drain current
ID = f (TC)
parameter: VGS≥ 10 V
0 20 40 60 80 100 120 °C 160
TC
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
A
1.9 SPP02N60S5
ID
Safe operating area
ID=f (VDS)
parameter: D=0.01, TC=25°C
10 0 10 1 10 2 10 3
VVDS
-2
10
-1
10
0
10
1
10
A
SPP02N60S5
ID
R
DS(on)
= V
DS
/ I
D
DC
10 ms
1 ms
100 µs
tp = 11.0µs
Transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
10 -5 10 -4 10 -3 10 -2 10 -1
s
tp
-2
10
-1
10
0
10
1
10
K/W
ZthJC
52001-07-25
SPP02N60S5
SPB02N60S5
Preliminary data
Typ. output characteristic
ID = f (VDS)
Parameter: VGS, Tj = 25 °C
0 5 10 15 V 25
VDS
0
1
2
3
4
A
6
ID
6V
7V
7.5V
8V
8.5V
9V
10V
12V
20V
Drain-source on-resistance
RDS(on) = f (Tj)
parameter : ID = 1.1 A, VGS = 10 V
-60 -20 20 60 100 °C 180
Tj
0
2
4
6
8
10
12
14
Ω
17 SPP02N60S5
RDS(on)
typ
98%
Typ. capacitances
C = f (VDS)
parameter: VGS=0 V, f=1 MHz
0 10 20 30 40 50 60 70 80 V 100
VDS
0
10
1
10
2
10
3
10
4
10
pF
C
Ciss
Coss
Crss
Typ. transfer characteristics
ID= f ( VGS )
VDS≥ 2 x ID x RDS(on)max
0 4 8 12 V 20
VGS
0
1
2
3
4
A
6
ID
62001-07-25
SPP02N60S5
SPB02N60S5
Preliminary data
Avalanche energy
EAS = f (Tj)
par.: ID=1.44A, VDD=50V
20 40 60 80 100 120 °C 160
Tj
0
10
20
30
mJ
50
EAS
Avalanche SOA
IAR = f (tAR)
par.: Tj ≤ 150 °C
10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4
µs
tAR
0
0.2
0.4
0.6
0.8
1
1.2
1.4
A
1.8
IAR
Tj(START)=125°C
Tj(START)=25°C
Drain-source breakdown voltage
V(BR)DSS = f (Tj)
-60 -20 20 60 100 °C 180
Tj
540
560
580
600
620
640
660
680
V
720 SPP02N60S5
V(BR)DSS
Gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS, ID = 80 µA
-60 -20 20 60 100 °C 180
Tj
0
1
2
3
4
5
V
7
VGS(th)
typ.
max.
min.
72001-07-25
SPP02N60S5
SPB02N60S5
Preliminary data
Forward characteristics of reverse diode
IF = f (VSD)
parameter: Tj , tp = 10 µs
0 0.4 0.8 1.2 1.6 2 2.4 V3
VSD
-2
10
-1
10
0
10
1
10
A
SPP02N60S5
IF
Tj = 25 °C typ
Tj = 25 °C (98%)
Tj = 150 °C typ
Tj = 150 °C (98%)
Typ. gate charge
VGS = f (QGate)
parameter: ID = 1.8 A pulsed
012345678nC 10
Qg
0
2
4
6
8
10
12
V
16 SPP02N60S5
VGS
0,8 VDS max
DS max
V
0,2
82001-07-25
SPP02N60S5
SPB02N60S5
Preliminary data
P-TO220-3-1
symbol [mm] [inch]
minmaxminmax
A 9.70 10.30 0.3819 0.4055
B 14.88 15.95 0.5858 0.6280
C 0.65 0.86 0.0256 0.0339
D 3.55 3.89 0.1398 0.1531
E 2.60 3.00 0.1024 0.1181
F 6.00 6.80 0.2362 0.2677
G 13.00 14.00 0.5118 0.5512
H 4.35 4.75 0.1713 0.1870
K 0.38 0.65 0.0150 0.0256
L 0.95 1.32 0.0374 0.0520
M
N 4.30 4.50 0.1693 0.1772
P 1.17 1.40 0.0461 0.0551
T 2.30 2.72 0.0906 0.1071
2.54 t y p. 0.1 t y p.
dimensions
P-TO220-3-1
TO - 263 (D²Pak / P - T O 220 S MD)
symbol [mm] [inch]
min max min max
A 9.80 10.20 0.3858 0.4016
B 0.70 1.30 0.0276 0.0512
C 1.00 1.60 0.0394 0.0630
D 1.03 1.07 0.0406 0.0421
E
F 0.65 0.85 0.0256 0.0335
G
H 4.30 4.50 0.1693 0.1772
K 1.17 1.37 0.0461 0.0539
L 9.05 9.45 0.3563 0.3720
M 2.30 2.50 0.0906 0.0984
N
P 0.00 0.20 0.0000 0.0079
Q 4.20 5.20 0.1654 0.2047
R
S 2.40 3.00 0.0945 0.1181
T 0.40 0.60 0.0157 0.0236
U
V
W
X
Y
Z0.3701
0.6358
0.1811
2.54 typ.
5.08 typ.
4.60
9.40
16.15
15 typ.
6.23
1.15
10.80
8° max
dimensions
0.4252
0.0453
0.2453
0.1 typ.
0.2 typ.
0.5906 typ.
8° max
92001-07-25
SPP02N60S5
SPB02N60S5
Preliminary data
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
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