© 2009 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C - 500 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ- 500 V
VGSS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C - 10 A
IDM TC= 25°C, Pulse Width Limited by TJM - 30 A
IAR TC= 25°C - 10 A
EAR TC= 25°C50mJ
EAS TC= 25°C 1.5 J
dV/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns
PDTC= 25°C 300 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Torque (TO-3P,TO-220 & TO-247) 1.13/10 Nm/lb.in.
Weight TO-247 6.0 g
TO-3P 5.5 g
TO-220 3.0 g
TO-263 2.5 g
DS99911B(03/09)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = - 250μA - 500 V
VGS(th) VDS = VGS, ID = - 250μA - 2.0 - 4.0 V
IGSS VGS = ±20V, VDS = 0V ±100 nA
IDSS VDS = VDSS, VGS = 0V - 10 μA
TJ = 125°C - 250 μA
RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1 1 Ω
PolarPTM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTA10P50P
IXTH10P50P
IXTP10P50P
IXTQ10P50P
VDSS = - 500V
ID25 = - 10A
RDS(on) ≤≤
≤≤
≤ 1ΩΩ
ΩΩ
Ω
G = Gate D = Drain
S = Source TAB = Drain
TO-263 (IXTA)
GS
D(TAB)
TO-247 (IXTH)
GDSD(TAB)
TO-220 (IXTP)
DD(TAB)
G
S
GDS
TO-3P (IXTQ)
D(TAB)
Features
zInternational Standard Packages
zFast Intrinsic Diode
zDynamic dV/dt Rated
zAvalanche Rated
zRugged PolarPTM Process
zLow QG and Rds(on) Characterization
zLow Drain-to-Tab Capacitance
zLow Package Inductance
Advantages
zEasy to Mount
zSpace Savings
zHigh Power Density
Applications
zHigh-Side Switches
zPush Pull Amplifiers
zDC Choppers
zAutomatic Test Equipment
zCurrent Regulators
IXTA10P50P IXTH10P50P
IXTP10P50P IXTQ10P50P
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = -10V, ID = 0.5 • ID25, Note 1 6.5 11 S
Ciss 2840 pF
Coss VGS = 0V, VDS = - 25V, f = 1MHz 275 pF
Crss 42 pF
td(on) 20 ns
tr 28 ns
td(off) 52 ns
tf 44 ns
Qg(on) 50 nC
Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 17 nC
Qgd 18 nC
RthJC 0.42 °C/W
RthCS (TO-3P & TO-247) 0.21 °C/W
(TO-220) 0.50 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V - 10 A
ISM Repetitive, Pulse Width Limited by TJM - 40 A
VSD IF = - 5A, VGS = 0V, Note 1 - 3 V
trr 414 ns
QRM 5.90 μC
IRM - 28.6 A
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
Resistive Switching Times
VGS = -10V, VDS = 0.5 • VDSS, ID = 0 .5 • ID25
RG = 3.3Ω (External)
IF = - 5A, -di/dt = -100A/μs
VR = -100V, VGS = 0V
© 2009 IXYS CORPORATION, All Rights Reserved
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
TO-247 (IXTH) Outline
Terminals: 1 - Gate 2 - Drain
e
∅ P
1 2 3
TO-3P (IXTQ) Outline
Pins: 1 - Gate 2 - Drain
TO-220 (IXTP) Outline
TO-263 (IXTA) Outline
IXTA10P50P IXTH10P50P
IXTP10P50P IXTQ10P50P
IXTA10P50P IXTH10P50P
IXTP10P50P IXTQ10P50P
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fi g . 1. Ou tp u t C h ar acter isti c s
@ 25ºC
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0-10-9-8-7-6-5-4-3-2-10
V
DS
- Vo lt s
I
D
- A mpe res
V
GS
= - 10V
- 7V
- 5
V
- 6
V
Fi g . 2. Exten d ed Ou tp u t C h ar acteri sti cs
@ 25º C
-26
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0-32-28-24-20-16-12-8-40
V
DS
- Volts
I
D
- Am peres
V
GS
= - 10V
- 8V
- 5
V
- 6
V
- 7
V
Fig. 3. Output Characteristics
@ 125ºC
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0-18-16-14-12-10-8-6-4-20
V
DS
- Volts
I
D
- Am peres
V
GS
= - 10V
- 7V
- 6V
- 5V
Fig. 4. R
DS(on)
Normalized to I
D
= - 5A vs.
Junction T emperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- N orma lize d
V
GS
= - 10V
I
D
= -10A
I
D
= - 5A
Fig. 5. R
DS(on)
Normalized to I
D
= - 5A vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
-26-24-22-20-18-16-14-12-10-8-6-4-20
I
D
- Amp eres
R
DS(on)
- N orma lize d
V
GS
= - 10V
T
J
= 25ºC
T
J
= 125ºC
Fig. 6. Maximum Drain C urr en t vs.
Case Temperatur e
-11
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
I
D
- A mp ere s
© 2009 IXYS CORPORATION, All Rights Reserved
IXTA10P50P IXTH10P50P
IXTP10P50P IXTQ10P50P
Fig. 7. Input Adm ittance
-16
-14
-12
-10
-8
-6
-4
-2
0-6.5-6.0-5.5-5.0-4.5-4.0-3.5
V
GS
- Volts
I
D
- A mpe res
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
2
4
6
8
10
12
14
16
18
20
22
24
-18-16-14-12-10-8-6-4-20
I
D
- Amp eres
g
f s
- Siemen s
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Forward Voltage Drop of
In tr insi c D iod e
-30
-25
-20
-15
-10
-5
0-3.5-3-2.5-2-1.5-1-0.5
V
SD
- Volts
I
S
- A mpe res
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
00 5 10 15 20 25 30 35 40 45 50
Q
G
- Nan oCoulomb s
V
GS
- V o lts
V
DS
= - 250V
I
D
= - 5A
I
G
= -1mA
Fig. 11. Capacitance
10
100
1,000
10,000
-40-35-30-25-20-15-10-50
V
DS
- Volts
Capacitance - P icoF arad s
f
= 1 MH
z
Ciss
Crss
Coss
Fig. 12. Forward-Bias Safe Operating Area
0.1
1.0
10.0
100.0
10 100 1000
V
DS
- Volts
I
D
- A mp ere s
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
100µs
R
DS(on)
Limit
10ms
DC
-
-
----
-100ms
IXTA10P50P IXTH10P50P
IXTP10P50P IXTQ10P50P
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_10P50P(B5)5-21-08-B
Fi g . 13. Maximu m Tr an si en t Th er mal I mp ed an ce
0.01
0.10
1.00
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
