1. Product profile
1.1 General description
200 W LDMOS power transistor with improved video bandwidth for base station
applications at frequencies from 2500 MHz to 2700 MHz.
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF per carrier;
5 MHz carrier spacing.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low thermal resistance providing excellent thermal stability
Decoupling leads to enable improved video bandwidth performance (150 MHz typical)
Designed for broadband operation (2500 MHz to 2700 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for base stations and multi carrier applications in the
2500 MHz to 2700 MHz frequency range
BLC8G27LS-210PV
Power LDMOS transistor
Rev. 4 — 24 November 2017 Product data sheet
Table 1. Typical performance
Typical RF performance at Tcase = 25
C in a common source class-AB production test circuit.
Test signal f IDq VDS PL(AV) GpDACPR5M
(MHz) (mA) (V) (W) (dB) (%) (dBc)
2-carrier W-CDMA 2600 to 2700 1730 28 65 17 30 29 [1]
BLC8G27LS-210PV All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet Rev. 4 — 24 November 2017 2 of 16
BLC8G27LS-210PV
Power LDMOS transistor
2. Pinning information
[1] Connected to flange.
3. Ordering information
4. Limiting values
[1] Continuous use at maximum temperature will affect the reliability, for details refer to the online MTF
calculator.
5. Thermal characteristics
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1drain2
2drain1
3 gate1
4 gate2
5source [1]
6 video decoupling drain1
7n.c.
8n.c.
9 video decoupling drain2
26
5
1
3748
9
aaa-009150
2
1
9
3
7
4
8
5
6
Table 3. Ordering information
Type number Package
Name Description Version
BLC8G27LS-210PV - air cavity plastic earless flanged package; 8 leads SOT1251-1
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 65 V
VGS gate-source voltage 0.5 +13 V
Tstg storage temperature 65 +150 C
Tjjunction temperature [1] - 225 C
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Rth(j-c) thermal resistance from junction to case Tcase =80C; PL= 65 W 0.22 K/W
BLC8G27LS-210PV All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet Rev. 4 — 24 November 2017 3 of 16
BLC8G27LS-210PV
Power LDMOS transistor
6. Characteristics
7. Test information
7.1 Ruggedness in class-AB operation
The BLC8G27LS-210PV is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS =28 V;
IDq = 1730 mA; PL= 200 W (CW); f = 2600 MHz.
7.2 Impedance information
[1] ZS and ZL defined in Figure 1.
Table 6. DC characteristics
Tj = 25
C per section, unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID=1.44mA 65 - - V
VGS(th) gate-source threshold voltage VDS = 10 V; ID= 144 mA 1.5 1.9 2.3 V
VGSq gate-source quiescent voltage VDS = 28 V; ID= 865 mA 1.6 2 2.4 V
IDSS drain leakage current VGS = 0 V; VDS =28V - - 2.8 A
IDSX drain cut-off current VGS =V
GS(th) + 3.75 V;
VDS =10V
- 26.9 - A
IGSS gate leakage current VGS =11V; V
DS = 0 V - - 280 nA
gfs forward transconductance VDS = 10 V; ID= 7.2 A - 11.2 - S
RDS(on) drain-source on-state resistance VGS =V
GS(th) + 3.75 V;
ID=5.4A
-0.10-
Table 7. RF characteristics
Test signal: 2-carrier W-CDMA; 3GPP test model 1 with 64 DPCH; PAR = 8.4 dB at 0.01 %
probability on the CCDF; f1= 2602.5 MHz; f2= 2607.5 MHz; f3= 2692.5 MHz; f4= 2697.5 MHz;
RF performance at VDS =28V; I
Dq =1730mA; T
case =25
C; unless otherwise specified; in a water
cooled class-AB test circuit.
Symbol Parameter Conditions Min Typ Max Unit
Gppower gain PL(AV) =65W 15.8 17 - dB
Ddrain efficiency PL(AV) =65W 27 30 - %
RLin input return loss PL(AV) =65W - 13 8dB
ACPR5M adjacent channel power ratio (5 MHz) PL(AV) =65W - 29 26 dBc
Table 8. Typical impedance
Measured load-pull data per section; IDq = 865 mA; VDS = 28 V.
f ZS [1] ZL[1]
(MHz) () ()
2500 2.58 j5.80 1.60 j4.32
2600 3.40 j6.30 1.65 j4.44
2700 6.35 j6.45 1.77 j4.75
BLC8G27LS-210PV All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet Rev. 4 — 24 November 2017 4 of 16
BLC8G27LS-210PV
Power LDMOS transistor
7.3 VBW in a class-AB operation
The BLC8G27LS-210PV shows 150 MHz (typical) video bandwidth (IMD third-order
intermodulation inflection point) in a class-AB test circuit in the 2.6 GHz to 2.7 GHz band
at VDS = 28 V and IDq =1.73A.
Fig 1. Definition of transistor impedance
001aaf059
drain
ZL
ZS
gate
VDS = 28 V; IDq = 1730 mA.
(1) low
(2) high
Fig 2. VBW capacity in class-AB test circuit
aaa-013023
1 10 102103
-70
-60
-50
-40
-30
-20
-10
carrier spacing (MHz)
IMD
IMDIMD
(dBc)
(dBc)(dBc)
(1)(1)(1)
(2)(2)(2)
(1)(1)(1)
(2)(2)(2)
(1)(1)(1)
(2)(2)(2)
IMD3IMD3IMD3
IMD5
IMD5IMD5
IMD7
IMD7IMD7
BLC8G27LS-210PV All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet Rev. 4 — 24 November 2017 5 of 16
BLC8G27LS-210PV
Power LDMOS transistor
7.4 Test circuit
[1] American Technical Ceramics type 800B or capacitor of same quality.
[2] Murata or capacitor of same quality.
Printed-Circuit Board (PCB): Rogers 4350B with a thickness of 0.76 mm. See Ta b l e 9 for a list of
components.
Fig 3. Component layout
Table 9. List of components
See Figure 3 for component layout.
Component Description Value Remarks
C1, C2 multilayer ceramic chip capacitor 1.6 pF [1] ATC 800B
C3, C8, C10, C14, C18 multilayer ceramic chip capacitor 24 pF [1] ATC 800B
C4, C7 multilayer ceramic chip capacitor 100 nF [2] Murata
C5, C6 multilayer ceramic chip capacitor 1 F[2] Murata
C9, C12, C16, C19 multilayer ceramic chip capacitor 470 F, 50 V [2] Murata
C11, C17 multilayer ceramic chip capacitor 220 nF [2] Murata
C13, C15 electrolytic capacitor > 470 F, 63 V
R1, R2 chip resistor 4.7 ,
1%tolerance
SMD 0805
R3 chip resistor 10 ,
1%tolerance
SMD 0805
R4 chip resistor 100 ,
1%tolerance
SMD 2010
aaa-014685
C6
C1
R3
C2
C8 C9
C19
C10 C12
C18 C16
C17
C13
C15
C14
C11
C7
C5 C3
R2
C4
R1
R4
60 mm
50 mm 50 mm
BLC8G27LS-210PV All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet Rev. 4 — 24 November 2017 6 of 16
BLC8G27LS-210PV
Power LDMOS transistor
7.5 Graphical data
7.5.1 Pulsed CW
VDS = 28 V; IDq = 1730 mA; tp= 100 s; =10%.
(1) f = 2600 MHz
(2) f = 2650 MHz
(3) f = 2700 MHz
VDS = 28 V; IDq = 1730 mA; tp= 100 s; =10%.
(1) f = 2600 MHz
(2) f = 2650 MHz
(3) f = 2700 MHz
Fig 4. Power gain as a function of output power;
typical values
Fig 5. Drain efficiency as a function of out power;
typical values
aaa-013024
35 39 43 47 51 55
14
15
16
17
18
19
PL (dBm)
Gp
Gp
(dB)(dB)(dB)
(1)(1)(1)
(2)
(2)(2)
(3)
(3)(3)
aaa-013025
35 39 43 47 51 55
0
10
20
30
40
50
60
PL (dBm)
ηD
ηD
(%)(%)(%)
(3)(3)(3)
(2)(2)(2)
(1)(1)(1)
BLC8G27LS-210PV All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet Rev. 4 — 24 November 2017 7 of 16
BLC8G27LS-210PV
Power LDMOS transistor
7.5.2 IS-95
VDS = 28 V; IDq = 1730 mA.
(1) f = 2605 MHz
(2) f = 2650 MHz
(3) f = 2695 MHz
VDS = 28 V; IDq = 1730 mA.
(1) f = 2605 MHz
(2) f = 2650 MHz
(3) f = 2695 MHz
Fig 6. Power gain as a function of output power;
typical values
Fig 7. Drain efficiency as a function of output power;
typical values
VDS = 28 V; IDq = 1730 mA.
(1) f = 2605 MHz
(2) f = 2650 MHz
(3) f = 2695 MHz
VDS = 28 V; IDq = 1730 mA.
(1) f = 2605 MHz
(2) f = 2650 MHz
(3) f = 2695 MHz
Fig 8. Adjacent channel power ratio (885 kHz) as a
function of output power; typical values
Fig 9. Adjacent channel power ratio (1980 kHz) as a
function of output power; typical values
aaa-013026
26 30 34 38 42 46 50
15
16
17
18
19
20
PL (dBm)
Gp
Gp
(dB)(dB)(dB)
(1)(1)(1)
(2)
(2)(2)
(3)
(3)(3)
aaa-013027
34 36 38 40 42 44 46 48 50
0
10
20
30
40
PL (dBm)
ηD
ηD
(%)(%)(%)
(3)(3)(3)
(2)(2)(2)
(1)(1)(1)
aaa-013092
34 36 38 40 42 44 46 48 50
-70
-60
-50
-40
-30
PL (dBm)
ACPR
ACPR885k885k
ACPR885k
(dBc)(dBc)(dBc)
(1)(1)(1)
(2)(2)(2)
(3)(3)(3)
aaa-013093
34 36 38 40 42 44 46 48 50
-80
-75
-70
-65
-60
-55
-50
PL (dBm)
ACPR
_ ACPR1980k1980k
ACPR1980k
(dBc)(dBc)(dBc)
(1)(1)(1)
(2)(2)(2)
(3)(3)(3)
BLC8G27LS-210PV All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet Rev. 4 — 24 November 2017 8 of 16
BLC8G27LS-210PV
Power LDMOS transistor
7.5.3 1-Carrier W-CDMA
VDS = 28 V; IDq = 1730 mA.
(1) f = 2605 MHz
(2) f = 2650 MHz
(3) f = 2695 MHz
VDS = 28 V; IDq = 1730 mA.
(1) f = 2605 MHz
(2) f = 2650 MHz
(3) f = 2695 MHz
Fig 10. Peak-to-average ratio as a function of output
power; typical values
Fig 11. Peak output power as a function of output
power; typical values
aaa-013094
34 36 38 40 42 44 46 48 50
4
6
8
10
12
PL (dBm)
PAR
PARPAR
(dB)
(dB)(dB)
(3)(3)(3)
(2)(2)(2)
(1)(1)(1)
aaa-013096
34 36 38 40 42 44 46 48 50
46
48
50
52
54
56
PL (dBm)
PL(M)L(M)
PL(M)
(dBm)(dBm)(dBm)
(3)(3)(3)
(2)(2)(2)
(1)(1)(1)
VDS = 28 V; IDq = 1730 mA.
(1) f = 2602.5 MHz
(2) f = 2650 MHz
(3) f = 2697.5 MHz
VDS = 28 V; IDq = 1730 mA.
(1) f = 2602.5 MHz
(2) f = 2650 MHz
(3) f = 2697.5 MHz
Fig 12. Power gain as a function of output power;
typical values
Fig 13. Drain efficiency as a function of output power;
typical values
aaa-013098
36 38 40 42 44 46 48 50 52
15
16
17
18
19
20
PL (dBm)
Gp
Gp
(dB)(dB)(dB)
(1)(1)(1)
(2)(2)(2)
(3)
(3)(3)
aaa-013099
36 38 40 42 44 46 48 50 52
0
10
20
30
40
50
PL (dBm)
ηD
ηD
(%)(%)(%)
(1)(1)(1)
(2)(2)(2)
(3)(3)(3)
BLC8G27LS-210PV All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet Rev. 4 — 24 November 2017 9 of 16
BLC8G27LS-210PV
Power LDMOS transistor
7.5.4 2-Carrier W-CDMA
VDS = 28 V; IDq = 1730 mA.
(1) f = 2602.5 MHz
(2) f = 2650 MHz
(3) f = 2697.5 MHz
VDS = 28 V; IDq = 1730 mA.
(1) f = 2602.5 MHz
(2) f = 2650 MHz
(3) f = 2697.5 MHz
Fig 14. Peak-to-average ratio as a function of output
power; typical values
Fig 15. Input return loss as a function of output
power; typical values
aaa-013101
36 38 40 42 44 46 48 50 52
3
4
5
6
7
8
PL (dBm)
PAR
PARPAR
(dB)
(dB)(dB)
(1)(1)(1)
(2)(2)(2)
(3)(3)(3)
aaa-013102
36 38 40 42 44 46 48 50 52
10
14
18
22
26
30
PL (dBm)
RL
RLinin
RLin
(dB)(dB)(dB)
(1)(1)(1)
(2)
(2)(2)
(3)
(3)(3)
VDS = 28 V; IDq = 1730 mA.
(1) f = 2605 MHz
(2) f = 2650 MHz
(3) f = 2695 MHz
VDS = 28 V; IDq = 1730 mA.
(1) f = 2605 MHz
(2) f = 2650 MHz
(3) f = 2695 MHz
Fig 16. Power gain as a function of output power;
typical values
Fig 17. Drain efficiency as a function of output power;
typical values
aaa-013104
36 38 40 42 44 46 48 50 52
15
16
17
18
19
20
PL (dBm)
Gp
Gp
(dB)(dB)(dB)
(1)(1)(1)
(2)
(2)(2)
(3)
(3)(3)
aaa-013106
36 38 40 42 44 46 48 50 52
0
10
20
30
40
50
PL (dBm)
ηD
ηD
(%)(%)(%)
(3)(3)(3)
(2)(2)(2)
(1)(1)(1)
BLC8G27LS-210PV All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet Rev. 4 — 24 November 2017 10 of 16
BLC8G27LS-210PV
Power LDMOS transistor
VDS = 28 V; IDq = 1730 mA.
(1) f = 2605 MHz
(2) f = 2650 MHz
(3) f = 2695 MHz
Fig 18. Input return loss as a function of output power; typical values
VDS = 28 V; IDq = 1730 mA.
(1) f = 2605 MHz
(2) f = 2650 MHz
(3) f = 2695 MHz
VDS = 28 V; IDq = 1730 mA.
(1) f = 2605 MHz
(2) f = 2650 MHz
(3) f = 2695 MHz
Fig 19. Adjacent channel power ratio (5 MHz) as a
function of output power; typical values
Fig 20. Adjacent channel power ratio (10 MHz) as a
function of output power; typical values
aaa-013110
36 38 40 42 44 46 48 50 52
10
14
18
22
26
30
PL (dBm)
RL
RLinin
RLin
(dB)(dB)(dB)
(1)(1)(1)
(2)
(2)(2)
(3)
(3)(3)
aaa-013111
34 36 38 40 42 44 46 48 50
-60
-50
-40
-30
-20
PL (dBm)
ACPR
ACPR5M5M
ACPR5M
(dBc)(dBc)(dBc)
(1)(1)(1)
(2)(2)(2)
(3)(3)(3)
aaa-013112
34 36 38 40 42 44 46 48 50
-60
-50
-40
-30
-20
PL (dBm)
ACPR
ACPR10M10M
ACPR10M
(dBc)(dBc)(dBc)
(1)(1)(1)
(2)(2)(2)
(3)(3)(3)
BLC8G27LS-210PV All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet Rev. 4 — 24 November 2017 11 of 16
BLC8G27LS-210PV
Power LDMOS transistor
8. Package outline
Fig 21. Package outline SOT1251-1
References
Outline
version
European
projection Issue date
IEC JEDEC JEITA
SOT1251-1 14-01-31
17-08-31
Air cavity plastic earless flanged package; 8 leads SOT1251-1
sot1251-1_po
Unit
mm
max
nom
min
4.65
4.18
1.12
0.91
9.60
9.20
15.85
15.65
A
Dimensions
bD
1EE
1HH
1Q(1)
2.33
2.13
32.33
32.13
10.23
10.03
U1
11.78
11.58
b1
0.2
0.1
c
31.44
31.04
D
1.83
1.63
36.42
36.22
9.50
9.30
13.72
eLF U
2
0.5
v
0.5
w1
0.5
w2
65°
61°
Į
0.1
y
5.94
5.74
Z
11.18
10.97
Z1
10 mm0
scale
31.34
31.14
16.71
16.51
Q
D
5
F
E
E1
c
A
U2
HH1Z Z1
L
b
D1
2
U1
6 9
7 8
1
w2Bb1
34
w1B
e
A
v A
Į
B
y
Note
1. Dimension Q is measured 0.1 mm away from the flange.
2. Ringframe and/or ringframe glue shall not overhang at the side of the flange.
BLC8G27LS-210PV All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet Rev. 4 — 24 November 2017 12 of 16
BLC8G27LS-210PV
Power LDMOS transistor
9. Handling information
[1] CDM classification C2A is granted to any part that passes after exposure to an ESD pulse of 500 V, but fails
after exposure to an ESD pulse of 750 V.
[2] HBM classification 3A is granted to any part that passes after exposure to an ESD pulse of 4000 V, but fails
after exposure to an ESD pulse of 8000 V.
10. Abbreviations
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Table 10. ESD sensitivity
ESD model Class
Charged Device Model (CDM); According to ANSI/ESDA/JEDEC standard JS-002 C2A [1]
Human Body Model (HBM); According to ANSI/ESDA/JEDEC standard JS-001 3A [2]
Table 11. Abbreviations
Acronym Description
3GPP 3rd Generation Partnership Project
CCDF Complementary Cumulative Distribution Function
CW Continuous Wave
DPCH Dedicated Physical CHannel
ESD ElectroStatic Discharge
IS-95 Interim Standard 95
LDMOS Laterally Diffused Metal Oxide Semiconductor
MTF Median Time to Failure
PAR Peak-to-Average Ratio
SMD Surface Mounted Device
VBW Video BandWidth
VSWR Voltage Standing Wave Ratio
W-CDMA Wideband Code Division Multiple Access
BLC8G27LS-210PV All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet Rev. 4 — 24 November 2017 13 of 16
BLC8G27LS-210PV
Power LDMOS transistor
11. Revision history
Table 12. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BLC8G27LS-210PV v.4 20171124 Product data sheet - BLC8G27LS-210PV v.3
Modifications: Table 2 on page 2: changed simplified version drawing SOT1251-3 to
SOT1251-1
Table 3 on page 2: changed version SOT1251-3 to SOT1251-1
Figure 21 on page 11: changed package outline drawing SOT1251-3 to
SOT1251-1
BLC8G27LS-210PV v.3 20161202 Product data sheet - BLC8G27LS-210PV v.2
BLC8G27LS-210PV v.2 20150901 Product data sheet - BLC8G27LS-210PV v.1
BLC8G27LS-210PV v.1 20150209 Product data sheet - -
BLC8G27LS-210PV All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet Rev. 4 — 24 November 2017 14 of 16
BLC8G27LS-210PV
Power LDMOS transistor
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.ampleon.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Ampleon does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Ampleon sales office. In
case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Ampleon and its customer, unless Ampleon and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be valid
in which the Ampleon product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Ampleon does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Ampleon takes no responsibility for
the content in this document if provided by an information source outside of
Ampleon.
In no event shall Ampleon be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost profits,
lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Ampleon’s aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Ampleon.
Right to make changes — Ampleon reserves the right to make changes to
information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Suitability for use — Ampleon products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction of an
Ampleon product can reasonably be expected to result in personal injury,
death or severe property or environmental damage. Ampleon and its
suppliers accept no liability for inclusion and/or use of Ampleon products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Ampleon makes no representation
or warranty that such applications will be suitable for the specified use without
further testing or modification.
Customers are responsible for the design and operation of their applications
and products using Ampleon products, and Ampleon accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Ampleon product is suitable and
fit for the customer’s applications and products planned, as well as for the
planned application and use of customer’s third party customer(s). Customers
should provide appropriate design and operating safeguards to minimize the
risks associated with their applications and products.
Ampleon does not accept any liability related to any default, damage, costs or
problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Ampleon products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Ampleon does not accept any
liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Ampleon products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.ampleon.com/terms, unless otherwise agreed in a valid written
individual agreement. In case an individual agreement is concluded only the
terms and conditions of the respective agreement shall apply. Ampleon
hereby expressly objects to applying the customer’s general terms and
conditions with regard to the purchase of Ampleon products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
BLC8G27LS-210PV All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet Rev. 4 — 24 November 2017 15 of 16
BLC8G27LS-210PV
Power LDMOS transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Ampleon product is automotive qualified, the product
is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Ampleon
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Ampleon’s warranty of the product for such
automotive applications, use and specifications, and (b) whenever customer
uses the product for automotive applications beyond Ampleon’s specifications
such use shall be solely at customer’s own risk, and (c) customer fully
indemnifies Ampleon for any liability, damages or failed product claims
resulting from customer design and use of the product for automotive
applications beyond Ampleon’s standard warranty and Ampleon’s product
specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Any reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own
trademarks.
13. Contact information
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
BLC8G27LS-210PV
Power LDMOS transistor
© Ampleon Netherlands B.V. 2017. All rights reserved.
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
Date of release: 24 November 2017
Document identifier: BLC8G27LS-210PV
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics . . . . . . . . . . . . . . . . . . 2
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3
7.1 Ruggedness in class-AB operation . . . . . . . . . 3
7.2 Impedance information . . . . . . . . . . . . . . . . . . . 3
7.3 VBW in a class-AB operation . . . . . . . . . . . . . . 4
7.4 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
7.5 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 6
7.5.1 Pulsed CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
7.5.2 IS-95 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
7.5.3 1-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 8
7.5.4 2-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 9
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
9 Handling information. . . . . . . . . . . . . . . . . . . . 12
10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 12
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
12.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
12.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
13 Contact information. . . . . . . . . . . . . . . . . . . . . 15
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16