©2002 Fairchild Semiconductor Corporation Rev. A1, August 2002
BC212LB
Absolute Maximum Ratings* TC=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 50 V
VCBO Collector-Base Voltage 60 V
VEBO Emitter-Base Voltage 5 V
ICCollector Current - Continuous 100 mA
TJ, TSTG Operating and Storage Junction Temperature Range - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristics
BVCEO Collector-Emitter Breakdown Voltage IC = 2mA 50 V
BVCBO Collector-Base Breakdown Voltage IC= 10µA60V
BVEBO Emitter-Base Breakdown Voltage IE = 10µA5V
ICBO Collector Cut-off Current VCB = 30V 15 nA
IEBO Emitter Cut-off Current VEB = 4V 15 nA
On Characteristics*
hFE DC Current Gain VCE = 5V, IC = 10µA
VCE = 5V, IC = 2mA
40
60
VCE(sat) Collector-Emitter Saturation Voltage IC = 100mA, IB = 5mA 0.6 V
VBE(sat) Base-Emitter Saturation Voltage IC = 100mA, IB = 5mA 1.4 V
VBE(on) Base-Emitter On Voltage VCE = 5V, IC = 2mA 0.6 0.72 V
Small Signal Characteristics
Cob Output Capacitance VCE = 10V, f = 1MHz 6 pF
hFE Small Signal Current Gain VCE = 5V, IC = 2mA, f = 1KHz 60
NF Noise Figure VCE = 5V, IC = 200µA, f = 1KHz
RG = 2KΩ, BW = 200Hz
10 dB
BC212LB
PNP General Purpose Amplifier
• This device is designed for general purpose amplifier application at
collector currents to 100mA.
• Sourced from process 68.
1. Emitter 2. Collector 3. Base
TO-92
1
©2002 Fairchild Semiconductor Corporation
BC212LB
Rev. A1, August 2002
Thermal Characteristics TA=25°C unless otherwise noted
Symbol Parameter Max. Units
PDTotal Device Dissipation
Derate above 25°C
350
2.8
mW
mW/°C
RθJA Thermal Resistance, Junction to Ambient 357 °C/W
RθJC Thermal Resistance, Junction to Case 125 °C/W
Package Dimensions
BC212LB
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.10
–0.05
0.38 +0.10
–0.05
TO-92
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A1, August 2002
©2002 Fairchild Semiconductor Corporation Rev. I1
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Definition of Terms
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Advance Information Formative or In
Design
This datasheet contains the design specifications for
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