PTZ5.1B
Diodes
Rev.F 1/4
㪧㪤㪛㪪
㪉㪅
㪋㪅
㪉㪅
Symbol Unit
PmW
Tj
Tstg
Parameter
J unc tion temperature
Storage temperatur e
Power dissipation Limits
150
-55 to +150
1000
Zener diode
PTZ5.1B
z
Applications
z
Dimensions (Unit : mm)
z
Land size figure (Unit : mm)
V olt age regulation
z
Features
1) Small power mo ld type. (PMDS)
2) High ESD tole rance
z
Construction
Silicon epitaxial planar
z
Structure
z
Taping dimensions (Unit : mm)
z
Absolute maximum ratings (Ta=25qC)
㪩㪦㪟㪤㩷㪑㩷㪧㪤㪛
㪜㪚㪪㪦㪛㪄㪈㪇㪍
㪤㪸㫅㪽㪸㪺㫋㫌㩷㪛㪸㫋
㪯㪅㪧㪫㪈㪇㪙
㪇㪅㪈㫧㪇㪅㪇㪉
䇭䇭䇭㩷㪇㪅㪈
㪉㪅㪍㫧㪇㪅㪉
㪉㪅㪇㫧㪇㪅
㪌㪅㪇㫧㪇㪅㪊
㪈㪅㪉㫧㪇㪅
㪋㪅㪌㫧㪇㪅
㪈㪅㪌㫧㪇㪅
㪋㪅㪇㫧㪇㪅㪈㪉㪅㪐㫧㪇㪅㪈
㪋㪅㪇㫧㪇㪅㪈
㪉㪅㪇㫧㪇㪅㪇㪌
㱢㪈㪅㪌㪌㫧㪇㪅㪇㪌
㪌㪅㪌㫧㪇㪅㪇㪌
㪈㪅㪎㪌㫧㪇㪅㪈
㪈㪉㫧㪇㪅
㱢㪈㪅㪌
㪐㪅㪌㫧㪇㪅㪈
㪇㪅㪊
㪌㪅㪊㫧㪇㪅㪈
䇭㩷㩷㩷㩷㩷㩷㪇㪅㪇㪌
㪉㪅㪏㪤
PTZ5.1B
Diodes
Rev.F 2/4
z
Electrical characteristics (Ta=25qC)
z
Marking (TYPE NO.)
TYPE TYPENO. TYPE TYPENO. TYPE 㪫㪰㪧㪜䇭㪥㪦㪅
PTZ3.6B
3.6B
PTZ8.2B
8.2B
PTZ20B
20B
PTZ3.9B
3.9B
PTZ9.1B
9.1B
PTZ22B
22B
PTZ4.3B
4.3B
PTZ10B
10B
PTZ24B
24B
PTZ4.7B
4.7B
PTZ11B
11B
PTZ27B
27B
PTZ5.1B
5.1B
PTZ12B
12B
PTZ30B
30B
PTZ5.6B
5.6B
PTZ13B
13B
PTZ33B
33B
PTZ6.2B
6.2B
PTZ15B
15B
PTZ36B
36B
PTZ6.8B
6.8B
PTZ16B
PTZ7.5B
7.5B
PTZ18B
18B
16B
MIN. TYP. MAX. Iz(mA) Max. Iz(mA) MAX. VR(V) TYP. Iz(mA) MIN. Test Condition
PTZ 3.6B 3.600 3.813 4.000 40 15 40 60 1.0 -2.8 40
PTZ 3.9B 3.900 4.136 4.400 40 15 40 40 1.0 -2.4 40
PTZ 4.3B 4.300 4.572 4.800 40 15 40 20 1.0 -2.1 40
PTZ 4.7B 4.700 4.924 5.200 40 10 40 20 1.0 -1.7 40
PTZ 5.1B 5.100 5.368 5.700 40 840 20 1.0 -0.6 40
PTZ 5.6B 5.600 5.856 6.300 40 840 20 1.5 1.4 40
PTZ 6.2B 6.200 6.509 7.000 40 640 20 3.0 2.5 40
PTZ 6.8B 6.800 7.280 7.700 40 640 20 3.5 3.2 40
PTZ 7.5B 7.500 7.889 8.400 40 440 20 4.0 4.2 40
PTZ 8.2B 8.200 8.655 9.300 40 440 20 5.0 5.0 40
PTZ 9.1B 9.100 9.747 10.200 40 640 20 6.0 5.9 40
PTZ 10B 10.000 10.310 11.200 40 640 10 7.0 6.9 40
PTZ 11B 11.000 11.510 12.300 20 820 10 8.0 7.9 20
PTZ 12B 12.000 12.500 13.500 20 820 10 9.0 8.7 20
PTZ 13B 13.300 13.820 15.000 20 10 20 10 10.0 10.1 20
PTZ 15B 14.700 15.350 16.500 20 10 20 10 11.0 11.8 20
PTZ 16B 16.200 16.860 18.300 20 12 20 10 12.0 13.3 20
PTZ 18B 18.000 19.000 20.300 20 12 20 10 13.0 15.0 20
PTZ 20B 20.000 20.820 22.400 20 14 20 10 15.0 17.4 20
PTZ 22B 22.000 23.850 24.500 10 㪈㪋 10 10 17.0 19.4 10
PTZ 24B 24.000 25.310 27.600 10 㪈㪍 10 10 19.0 21.6 10
PTZ 27B 27.000 28.700 30.800 10 㪈㪍 10 10 21.0 24.6 10
PTZ 30B 30.000 31.570 34.000 10 㪈㪏 10 10 23.0 27.5 10
PTZ 33B 33.000 34.950 37.000 10 㪈㪏 10 10 25.0 30.8 10
PTZ 36B 36.000 39.240 40.000 10 㪉㪇 10 10 27.0 37.0 10
(ϧ)The zener voltage(Vz) is measured 40ms after power is supplied.
(Ϩ)The operating resistances(Zz,Zzk) are measured by superimposing a minute alternating current
on the regulated current(Iz)
ESD breakdown voltage
ESD(kV)
30kV
C=150pF
R=330ȍ
forward
and
reverse:
10 times
Temperature
coeficiency
*Ȗz(mV/)
TYP.
Symbol
Zener voltageVz(V)
Operating
resistance
Zz(ȍ)
Reverse current
IR(μA)
PTZ5.1B
Diodes
Rev.F 3/4
z
Electrical characteristic curves (Ta=25qC)
㪧㪦㪮㪜㪩㩷㪛㪠㪪㪪㪠㪧㪘㪫㪠㪦㪥㪑㪧㪻㩿㫄㪮㪀
㪫㪠㪤㪜㪑㫋㩿㫄㫊㪀
㪧㪩㪪㪤㪄㪫㪠㪤㪜㩷㪚㪟㪘㪩㪘㪚㪫㪜㪩㪠㪪㪫㪠㪚㪪
㪫㪜㪤㪧㪅㪚㪦㪜㪝㪝㪠㪚㪠㪜㪥㪚㪜㪑㱏㫑㩿䋦㪆㷄㪀
㪱㪜㪥㪜㪩㩷㪭㪦㪣㪫㪘㪞㪜䋺㪭㫑㩿㪭㪀
㱏㫑㪄㪭㫑㩷㪚㪟㪘㪩㪘㪚㪫㪜㪩㪠㪪㪫㪠㪚㪪
㪫㪠㪤㪜㪑㫋㩿㫊㪀
㪩㫋㪿㪄㫋㩷㪚㪟㪘㪩㪘㪚㪫㪜㪩㪠㪪㪫㪠㪚㪪
㪫㪩㪘㪥㪪㪠㪜㪥㪫
㪫㪟㪘㪜㪩㪤㪘㪣㩷㪠㪤㪧㪜㪛㪘㪥㪚㪜㪑㪩㫋㪿㩷㩿㷄㪆㪮㪀 㪩㪜㪭㪜㪩㪪㪜㩷㩷㩷㪪㪬㪩㪞㪜㩷㪤㪘㪯㪠㪤㪬㪤
㪧㪦㪮㪜㪩㪑㪧㪩㪪㪤㩿㪮㪀
㪇㪅㪈
㪈㪇
㪈㪇㪇
㪈㪇㪇㪇
㪇㪅㪇㪇㪈 㪇㪅㪇㪈 㪇㪅㪈 㪈㪇 㪈㪇㪇 㪈㪇㪇㪇
㪩㫋㪿㩿㫁㪄㪸㪀
㪩㫋㪿㩿㫁㪄㪺㪀
㪈㫄㫊
㪠㪤㪔㪈㪇㫄㪘 㪠㪝㪔㪈㪇㪇㫄㪘
㪊㪇㪇㫌㫊
㫋㫀㫄㪼
Mounted on epoxy board
㪉㪇㪇
㪋㪇㪇
㪍㪇㪇
㪏㪇㪇
㪈㪇㪇㪇
㪈㪉㪇㪇
㪉㪌 㪌㪇 㪎㪌 㪈㪇㪇 㪈㪉㪌 㪈㪌㪇
㪈㪇
㪈㪇㪇
㪈㪇㪇㪇
㪈㪇㪇㪇㪇
㪇㪅㪇㪇㪈 㪇㪅㪇㪈 㪇㪅㪈 㪈㪇 㪈㪇㪇
㪧㪩㪪㪤
㪇㪅㪇㪇㪈
㪇㪅㪇㪈
㪇㪅㪈
㪈㪇
㪈㪇㪇
㪈㪇 㪈㪌 㪉㪇 㪉㪌 㪊㪇 㪊㪌 㪋㪇 㪋㪌
㪊㪅㪍
㪉㪋
㪉㪇
㪈㪏
㪈㪍㪈㪌㪈㪊㪈㪉㪈㪈㪈㪇㪐㪅㪈㪏㪅㪉㪎㪅㪌㪌㪅㪍 㪍㪅㪏㪍㪅㪉
㪌㪅㪈
㪋㪅㪎
㪋㪅㪊
㪊㪅㪐
㪊㪍
㪊㪇
㪉㪎 㪊㪊
㪉㪉
㪱㪜㪥㪜㪩㩷㪚㪬㪩㪩㪜㪥㪫㪑㪠㫑㩿㫄㪘㪀
㪱㪜㪥㪜㪩㩷㪭㪦㪣㪫㪘㪞㪜㪑㪭㫑㩿㪭㪀
㪭㫑㪄㪠㫑㩷㪚㪟㪘㪩㪘㪚㪫㪜㪩㪠㪪㪫㪠㪚㪪
㪄㪇㪅㪇㪏
㪄㪇㪅㪇㪍
㪄㪇㪅㪇㪋
㪄㪇㪅㪇㪉
㪇㪅㪇㪉
㪇㪅㪇㪋
㪇㪅㪇㪍
㪇㪅㪇㪏
㪇㪅㪈
㪇㪅㪈㪉
㪇㪉㪇㪊㪇㪋
㪄㪌
㪈㪇
㪈㪌
㪉㪇
㪉㪌
㪊㪇
㪊㪌
㪋㪇
㪘㪤㪙㪠㪜㪥㪫㩷㪫㪜㪤㪧㪜㪩㪘㪫㪬㪩㪜㪑㪫㪸㩿㷄㪀
㪧㪻㪄㪫㪸䇭㪚㪟㪘㪩㪘㪚㪫㪜㪩㪠㪪㪫㪠㪚㪪
㪫㪜㪤㪧㪅㪚㪦㪜㪝㪝㪠㪚㪠㪜㪥㪚㪜㪑㱏㫑㩿㫄㪭㪆㷄㪀
PTZ5.1B
Diodes
Rev.F 4/4
㪈㪇
㪈㪌
㪉㪇
㪉㪌
㪊㪇
㪚㪔㪉㪇㪇㫇㪝
㪩㪔㪇㱅
㪚㪔㪈㪇㪇㫇㪝
㪩㪔㪈㪅㪌㫂㱅
㪚㪔㪈㪌㪇㫇㪝
㪩㪔㪊㪊㪇㱅
No break at 30kV
㪈㪇㪇
㪈㪇㪇㪇
㪈㪇㪇㪇㪇
㪇㪇㪌㪈㪈
㪱㪜㪥㪜㪩㩷㪭㪦㪣㪫㪘㪞㪜䋺㪭㫑㩿㪭㪀
㪭㫑㪄㪠㫑㩷㪚㪟㪘㪩㪘㪚㪫㪜㪩㪠㪪㪫㪠㪚㪪
㪱㪜㪥㪜㪩㩷㪚㪬㪩㪩㪜㪥㪫㪑㪠㫑㩿㫄㪘㪀
㪩㪜㪭㪜㪩㪪㪜㩷㪚㪬㪩㪩㪜㪥㪫㪑㪠㪩㩿㫅㪘㪀
㪩㪜㪭㪜㪩㪪㪜㩷㪭㪦㪣㪫㪘㪞㪜䋺㪭㪩㩿㪭㪀
㪭㪩㪄㪠㪩㩷㪚㪟㪘㪩㪘㪚㪫㪜㪩㪠㪪㪫㪠㪚㪪
㪚㪘㪧㪘㪚㪠㪫㪘㪥㪚㪜㩷㪙㪜㪫㪮㪜㪜㪥
㪫㪜㪩㪤㪠㪥㪘㪣㪪㪑㪚㫋㩿㫇㪝㪀
㪩㪜㪭㪜㪩㪪㪜㩷㪭㪦㪣㪫㪘㪞㪜㪑㪭㪩㩿㪭㪀
㪭㪩㪄㪚㫋㩷㪚㪟㪘㪩㪘㪚㪫㪜㪩㪠㪪㪫㪠㪚㪪
㪭㫑㩷㪛㪠㪪㪧㪜㪩㪪㪠㪦㪥㩷㪤㪘㪧
㪱㪜㪥㪜㪩㩷㪭㪦㪣㪫㪘㪞㪜㪑㪭㫑㩿㪭㪀
㪩㪜㪭㪜㪩㪪㪜㩷㪚㪬㪩㪩㪜㪥㪫㪑㪠㪩㩿㫅㪘㪀
㪠㪩㩷㪛㪠㪪㪧㪜㪩㪪㪠㪦㪥㩷㪤㪘㪧
㪚㪘㪧㪘㪚㪠㪫㪘㪥㪚㪜㩷㪙㪜㪫㪮㪜㪜㪥
㪫㪜㪩㪤㪠㪥㪘㪣㪪㪑㪚㫋㩿㫇㪝㪀
㪚㫋㩷㪛㪠㪪㪧㪜㪩㪪㪠㪦㪥㩷㪤㪘㪧
㪱㪜㪥㪜㪩㩷㪚㪬㪩㪩㪜㪥㪫㪑㪠㫑㩿㫄㪘㪀
㪱㫑㪄㪠㫑㩷㪚㪟㪘㪩㪘㪚㪫㪜㪩㪠㪪㪫㪠㪚㪪
㪛㪰㪥㪘㪤㪠㪚㩷㪠㪤㪧㪜㪛㪘㪥㪚㪜㪑㪱㫑㩿㱅㪀
㪽㪔㪈㪤㪟䌺
㪇㪅㪇㪇㪇㪈
㪇㪅㪇㪇㪈
㪇㪅㪇㪈
㪇㪅㪈
㪈㪇
㪈㪇㪇
㪈㪇㪇㪇
㪇㪇㪌㪈㪈
㪫㪸㪔㪈㪉㪌㷄
㪫㪸㪔㪄㪉㪌㷄
㪫㪸㪔㪉㪌㷄
㪫㪸㪔㪎㪌㷄
㪫㪸㪔㪈㪌㪇㷄
㪇㪅㪈
㪇㪅㪉
㪇㪅㪊
㪇㪅㪋
㪇㪅㪌
㪇㪅㪍
㪇㪅㪎
㪇㪅㪏
㪇㪅㪐
㪫㪸㪔㪉㪌㷄
㪭㪩㪔㪈㪅㪌㪭
㫅㪔㪊㪇㫇㪺㫊
㪘㪭㪜㪑㪇㪅㪈㪈㪎㫅㪘
㪐㪇㪇
㪐㪈㪇
㪐㪉㪇
㪐㪊㪇
㪐㪋㪇
㪐㪌㪇
㪐㪍㪇
㪐㪎㪇
㪐㪏㪇
㪐㪐㪇
㪈㪇㪇㪇
㪘㪭㪜㪑㪐㪍㪎㪅㪋㫇㪝
㪫㪸㪔㪉㪌㷄
㪽㪔㪈㪤㪟㫑
㪭㪩㪔㪇㪭
㫅㪔㪈㪇㫇㪺㫊
㪇㪅㪇㪇㪈
㪇㪅㪇㪈
㪇㪅㪈
㪈㪇
㪈㪇㪇
㪇㪈㪉㪊㪋㪌㪍
㪫㪸㪔㪎㪌㷄
㪫㪸㪔㪄㪉㪌㷄
㪫㪸㪔㪈㪉㪌㷄
㪫㪸㪔㪉㪌㷄
㪫㪸㪔㪈㪌㪇㷄
㪈㪇
㪈㪇㪇
㪈㪇㪇㪇
㪈㪇㪇㪇㪇
㪇㪅㪈 㪈㪇
㪌㪅㪈
㪌㪅㪉
㪌㪅㪊
㪌㪅㪋
㪌㪅㪌
㪌㪅㪍
㪘㪭㪜㪑㪌㪅㪊㪏㪉㪭
㪫㪸㪔㪉㪌㷄
㪠㪱㪔㪌㪇㫄㪘
㫅㪔㪊㪇㫇㪺㫊
㪜㪣㪜㪚㪫㪩㪦㪪㪫㪘㪫㪠㪚
㪛㪠㪪㪚㪟㪘㪩㪞㪜㩷㪫㪜㪪㪫㩷㪜㪪㪛㩿㪢㪭
㪜㪪㪛㩷㪛㪠㪪㪧㪜㪩㪪㪠㪦㪥㩷㪤㪘㪧
Notes
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The contents described herein are subject to change without notice. The specifications for the
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that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
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ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Appendix1-Rev2.0
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Appendix