MITSUBISHI HVIGBT MODULES CM800HA-66H HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM800HA-66H IC ................................................................... 800A VCES ....................................................... 3300V Insulated Type 1-element in a pack APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 130 114 4 - M8 NUTS 570.25 20 570.25 E C E CM E C 3 - M4 NUTS C 140 1240.25 E 40 C G C E CIRCUIT DIAGRAM G 10.35 6 - 7 MOUNTING HOLES 10.65 48.8 15 61.5 40 18 LABEL 30 28 5 38 5.2 HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Mar. 2003 MITSUBISHI HVIGBT MODULES CM800HA-66H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (Tj = 25C) Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage -- Mounting torque -- Mass Conditions VGE = 0V VCE = 0V DC, TC = 60C Pulse Ratings 3300 20 800 1600 800 1600 6900 -40 ~ +150 -40 ~ +125 6000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.5 (Note 1) Pulse TC = 25C, IGBT part (Note 1) -- -- Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 Typical value Unit V V A A A A W C C V N*m N*m N*m kg ELECTRICAL CHARACTERISTICS (Tj = 25C) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td (on) tr td (off) tf VEC (Note 2) trr (Note 2) Qrr (Note 2) Rth(j-c)Q Rth(j-c)R Rth(c-f) Note 1. 2. 3. 4. Item Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance Conditions Limits Typ -- IC = 80mA, VCE = 10V 4.5 6.0 7.5 V VGE = VGES, VCE = 0V Tj = 25C IC = 800A, VGE = 15V Tj = 125C -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4.40 4.80 80 8.0 2.4 3.8 -- -- -- -- 3.30 -- 200 -- -- 0.008 0.5 5.72 -- -- -- -- -- 1.60 2.00 2.50 1.00 4.29 1.20 -- 0.018 0.036 -- A VCE = 10V VGE = 0V VCC = 1650V, IC = 800A, VGE = 15V VCC = 1650V, IC = 800A VGE1 = VGE2 = 15V RG = 3.75 Resistive load switching operation IE = 800A, VGE = 0V IE = 800A die / dt = -1600A / s Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied (Note 4) Max 10 Unit VCE = VCES, VGE = 0V Min -- mA V nF nF nF C s s s s V s C K/W K/W K/W Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Junction temperature (T j) should not increase beyond 150C. Pulse width and repetition rate should be such as to cause negligible temperature rise. HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Mar. 2003 MITSUBISHI HVIGBT MODULES CM800HA-66H HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 1600 1600 800 VGE=10V VGE=9V 400 0 2 4 6 VGE=8V VGE=7V 8 10 COLLECTOR CURRENT IC (A) VGE=15V VGE=20V 1200 800 400 Tj = 25C Tj = 125C 0 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 8 VGE=15V 6 4 2 Tj = 25C Tj = 125C 0 0 400 800 1200 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) VGE=13V VGE=14V 1200 0 EMITTER-COLLECTOR VOLTAGE VEC (V) VCE=10V VGE=12V VGE=11V 8 IC = 1600A IC = 800A 6 4 IC = 320A 2 0 4 8 12 16 20 GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE CHARACTERISTICS (TYPICAL) 6 4 2 Tj = 25C Tj = 125C 0 Tj = 25C COLLECTOR CURRENT IC (A) 8 0 10 0 1600 400 800 1200 EMITTER CURRENT IE (A) 1600 CAPACITANCE Cies, Coes, Cres (nF) COLLECTOR CURRENT IC (A) Tj=25C 103 7 VGE = 0V, Tj = 25C 5 Cies, Coes : f = 100kHz 3 Cres : f = 1MHz 2 102 7 5 3 2 101 7 5 3 2 Cies Coes Cres 100 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Mar. 2003 MITSUBISHI HVIGBT MODULES CM800HA-66H td(off) 100 td(on) 7 5 tr 3 2 10-1 7 5 SWITCHING ENERGY (J/P) REVERSE RECOVERY TIME trr (s) 3 2 tf VCC = 1650V, VGE = 15V RG = 3.75, Tj = 125C Inductive load 5 7 102 2 3 5 7 103 2 3 5 100 7 5 103 7 5 trr Irr 3 2 10-1 7 5 3 2 5 7 102 2 3 5 7 103 2 3 5 102 7 5 EMITTER CURRENT IE (A) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 2.5 VCC = 1650V, VGE = 15V, RG = 3.75, Tj = 125C, 2.0 Inductive load HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 10 VCC = 1650V, IC = 800A, VGE = 15V, Tj = 125C, 8 Inductive load Eon Eon 1.5 1.0 Eoff 0.5 Erec 0 0 200 400 600 800 4 2 Eoff 0 10 20 30 CURRENT (A) GATE RESISTANCE () GATE CHARGE CHARACTERISTICS (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j - c) VCC = 1650V IC = 800A 16 12 8 4 0 6 0 1000 20 GATE-EMITTER VOLTAGE VGE (V) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 5 5 VCC = 1650V, Tj = 125C 3 Inductive load 3 2 VGE = 15V, RG = 3.75 2 COLLECTOR CURRENT IC (A) SWITCHING ENERGY (J/P) SWITCHING TIMES (s) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 5 0 1000 2000 3000 4000 GATE CHARGE QG (nC) 5000 REVERSE RECOVERY CURRENT Irr (A) HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 101 7 5 3 2 40 Single Pulse TC = 25C Rth(j - c)Q = 0.018K/ W Rth(j - c)R = 0.036K/ W 100 7 5 3 2 10-1 7 5 3 2 10-2 10-3 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 TIME (s) Mar. 2003