VS-30BQ100HM3
www.vishay.com Vishay Semiconductors
Revision: 17-Dec-14 1Document Number: 94832
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High Performance Schottky Rectifier, 3 A
FEATURES
• Low forward voltage drop
• Guard ring for enhanced ruggedness and long
term reliability
• Small foot print, surface mountable
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Meets JESD 201 class 2 whisker test
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-30BQ100HM3 surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and small foot prints on PC boards. Typical applications are
in disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
PRODUCT SUMMARY
Package DO-214AB (SMC)
IF(AV) 3.0 A
VR100 V
VF at IF0.62 V
IRM 5 mA at 125 °C
TJ max. 175 °C
Diode variation Single die
EAS 3.0 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 3.0 A
VRRM 100 V
IFSM tp = 5 μs sine 800 A
VF3.0 Apk, TJ = 125 °C 0.62 V
TJRange -55 to +175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-30BQ100HM3 UNITS
Maximum DC reverse voltage VR100 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current IF(AV)
50 % duty cycle at TL = 148 °C, rectangular waveform 3.0
A
50 % duty cycle at TL = 138 °C, rectangular waveform 4.0
Maximum peak one cycle
non-repetitive surge current IFSM
5 μs sine or 3 μs rect. pulse Following any rated
load condition and with
rated VRRM applied
800
10 ms sine or 6 ms rect. pulse 70
Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1.0 A, L = 6 mH 3.0 mJ
Repetitive avalanche current IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 0.5 A