Silicon Transistors Type Case | = Maximum Ratings at 25C amb. Characteristics No. 83 __ B83 ~ | Interbase le Prot Intrinsic Peak-current Interbase Voltage peak standoff Emitter Current Resistance ratio Ip at Vez! =25V Tgso A. c Min. Max. Max. Min. Max. v A Ww uA kohm Silicon 2N489 TO5 G 65 2 0-6 0-51 0-62 20 47 6:8 Unijunction 2N489A TO5 G 65 2 0-6 0-51 0-62 15 4-7 6-8 2N489B TOS G 65 2 0-6 0-51 0-62 6 47 68 2N490 TOS G 65 2 0-6 0-51 0-62 20 6-2 9-1 2N490A TO5 SG 65 2 0-6 0-51 0-62 15 6-2 9-4 2N490B TOS G 65 2 0-6 0-51 0-62 6 6-2 9-1 2N491 TOS G 65 2 0-6 0-56 0-68 20 4-7 68 2N491A TO5 G 65 2 0-6 0-56 0-68 15 47 6-8 2N491B TOS G 65 2 0-6 0-56 0-68 6 47 6-8 2N492 TO5 6 65 2 0-6 0-56 0-68 20 6-2 9-1 2N492A TOS G 65 2 0-6 0-56 0-68 15 6-2 9-1 2N492B TOS G 65 2 0-6 0-56 0-68 6 6-2 9-41 2N493 TOS GS 65 2 0-6 0-62 0-75 20 4-7 68 2N493A TOS G 65 2 0-6 0-62 0-75 15 47 68 2N493B TOS G 65 2 0-6 0-62 0-75 6 47 6-8 2N494 TOS G 65 2 0-6 0-62 0-75 20 6-2 9-1 2N494A TOS G 65 2 0-6 0-62 0-75 15 6-2 9-1 2N494B TOS G 65 2 0-6 0-62 0-75 6 6-2 9-1 2N1671 TO5 S 35 2 0-45 0-47 0-62 25 47 9-1 2N1671A | TOS GS 35 2 0-45 0-47 0-62 25 47 9-4 2N16718 TOS G 35 2 0-45 0-47 0-62 6 4-7 9-1 2N2160 TOS G 35 2 0-45 O47 0-80 25 40 12:0 2N3980 TO18 P 35 1 0:36 0-68 0-82 4-0 8-0 TIS43 SILECT P _ 1 0-3 0-55 0-82 4-0 9-1 Type Case | - Maximum Ratings at 25C amb. Characteristics SPECIAL No. 8 8 FEATURES 28 87 Im . Vet-e2 Tet-e2(0N) ft Cop Ves] Vce } Ves le | Prop | * A | | - SO Vv Vv Vv A WwW Ifl Max. {fl Max. Ifl Min. | Max mA Vv mA Q mA Mc PNP 3N108 TO72 PE | 50 50 50 0-02 0-3 1-0 30 1:0 50 1-0 12 10 High Speed 3N109 TO72 PE | 50 50 50 0-02 0-3 1-0 150 1-0 50 1:0 12 10 Choppers 3N110 TO72 PE | 50 30 30 0-02 0-3 1-0 30 1-0 50 1-0 12 10 DUAL EMITTERS 3N111 ToO72 PE } --50 30 ~30 0-02 0-3 1-0 150 1-0 50 1-0 12 10 NPN 3N74 TO72 P 50 18 18 0-02 0:30 1:0 50 1:0 40 1:0 30 8 High Speed 3N75 TO72 P 50 18 18 0:02 0:30 1-0 100 1:0 40 1:0 30 8 Choppers 3N76 TO72 P 50 18 18 0-02 0:30 1-0 200 1:0 50 1:0 30 8 3N77 to | p | 40] 12] 12 | o02 | o30 | 10] 50 +0 | 50 1-0 | 30 g | FDUAL EMITTERS 3N78 To72 P 40 12 12 0-02 0-30 41-0 100 1-0 50 4-0 30 8 3N79 TO72 P 40 12 12 0-02 0-30 1:0 200 1-0 60 1:0 30 10 NOTE 1: The following symbols have been used throughout the Product Summary: Under Construction: Under hre: Under fr: Under Dissipation: A Alloyed * hte @ -~fhtb + dissipation at Tcase = 25C D Diffused A --fhte E Epitaxial $ -typical G Grown M Mesa 12 P Planar