MMBT3906
350mW, PNP Small Signal Transistor
Small Signal Diode
Surface device type mounting
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Min Max Min Max
Case : SOT- 23 small outline plastic package 2.70 3.10 0.106 0.122
1.20 1.65 0.047 0.065
0.30 0.50 0.012 0.020
1.78 2.04 0.070 0.080
2.20 3.00 0.087 0.118
0.95 1.40 0.037 0.055
Package Packing Marking
SOT-23 3K / 7" Reel 2A
SOT-23 3K / 7" Reel 2A
Maximum Ratings
Notes:1. Valid provided that electrodes are kept at ambient temperature
SOT-23
Type Number Symbol
Epitaxial planar die construction
Weight : 0.008gram (approximately)
Maximum Ratings and Electrical Characteristics
C
Unit (mm)
Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
-5
350
Collector-Base Voltage
Collector-Emitter Voltage
VCBO
VCEO
Unit (inch)
Dimensions
Suggested PAD Layou
t
V
V-40
-40
Rating at 25°C ambient temperature unless otherwise specified.
Ordering Information
Part No.
MMBT3906 RF
B
Power Dissipation PD
Value
0.022 REF
Features
Mechanical Data
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
A
0.550 REF
High temperature soldering guaranteed: 260°C/10s
F
D
E
G
Marking Code : 2A
Junction and Storage Temperature Range TJ, TSTG
Emitter-Base Voltage VEBO
Collector Current IC
Thermal resistance junction-ambient RthJA
MMBT3906 RFG
Units
°C
-200
-55 to + 150
mA
mW
V
357 °C/W
B
A
C
D
F
E
G
2 Emitter
3 Collector
1 Base
2.0
0.079
0.95
0.037
0.9
0.035
0.8
0.031
Version : C10
MMBT3906
350mW, PNP Small Signal Transistor
Small Signal Diode
Electrical Characteristics Units
Collector-Base Breakdown Voltage IE= 0 V
IB= 0 V
IC= 0 V
nA
nA
IC= -0.1mA
IC= -1mA
IC= -10mA
IC= -50mA
IC= -100mA
Collector-Emitter saturation voltage IB= -1mA
IC= -50mA IB= -5mA
Base-Emitter saturation voltage IB= -1mA V
IB= -5mA
VCE= -20V f= 100MHz MHz
VCB= -5V IE=0 f= 1MHz
Vcc=-3V Ic=-10mA nS
IB1=-1.0mA nS
Ic=-10mA nS
nS
Tape & Reel specification
Carrier width
Carrier length
Carrier depth
Sprocket hole
Reel outside diameter
Reel inner diameter
Feed hole width
Sprocke hole position
Punch hole position
Sprocke hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
-
-
IC= -50mA VBE(sat) -
VCE(sat)
Storage time Vcc=-3V ts
DC current gain VCE= -1V
VCE= -1V
Output capacitance Cobo
Fall time IB1=IB2=-1.0mA tf-
12.30 ±0.20
Collector-Emitter Breakdown Voltage
2.00 ±0.05
Emitter-Base Breakdown Voltage
0.229 ±0.013
8.10 ±0.20 W
Collector Base Cut-off Current
hFE
Emitter Base Cut-off Current
V(BR)CBO
IEBO
ICBO
V(BR)CEO
V(BR)EBO
Symbol
-
-
-50
T
D1
D2
E
F
P0
P1
-
-0.65
W1
3.15 ±0.10
2.77 ±0.10
1.22 ±0.10
13.0 ± 0.20
1.75 ±0.10
3.50 ±0.05
4.00 ±0.10
IC= -10mA
IC= -10mA
IC= -10mA
Gain-bandwidth product
Delay time
Rise time
VBE=-0.5V
250
fT
td-
-
-
-
--5
VCE= -1V 30
VEB= -6V
VCE= -1V 80
VCE= -1V 60
100
60
Min Max
-50
Type Number
IC= -10μA
IC= -1mA
IE= -10μA
VCB= -30V
-40
-40
55 Min
tr
Item Symbol Dimension(mm)
A
B
-35
-
1.50 ± 0.10
-0.25
-0.85
35
300
-0.4 V
-0.95
4.5pF
178 ± 1
d
D
225
C
75
T
op
Co
v
e
r T
ape
Carieer Ta
p
e
A
n
y
Additional Label
(
If Re
q
uired
)
TSC label
W1
D1D2
D
T
C
dP1
P0
A
B
F
W
E
Direction of Feed
Version : C10
MMBT3906
350mW, PNP Small Signal Transistor
Small Signal Transistor
Rating and Characteristic Curves
Version : C10
MMBT3906
350mW, PNP Small Signal Transistor
Small Signal Diode
Rating and Sharacteristic Curves
Version : C10
