set ae ~ _ ermB Seta Dane et aie o WM 4a8SS4S2 0008348 Oo i i Data Sheet No. PD-9.522B INTERNATIONAL RECTIFIER 7237-95 . INTERNATIONAL RECTIFIER | TOR REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRFRS220 0 IRFR9S222 4 P-CHANNEL IRFUS220 8 IRFUS2e22 -200 Volt, 1.5 Ohm HEXFET Product Summary The HEXFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient Part Number | BVpgsg | Rpsvon) ID geometry and unique processing of this latest 'State of the Art design achieves: very low on-state resistance combined with high _- IRFR9220 -200V 1.50 -3,6A dvdt capability. superior reverse energy and diode recovery IRFR9222 ~200V 2.40 -2.8A The HEXFET transistors also feature all of the well established IRFU9220 - . - advantages of MOSFETs such as voltage control, very fast swit- 200V 1.50 3.6A ching, ease of paralleling and temperature stability of the elec- IRFU9222 -200V 2.40 -2.8A trical parameters. Surface mount packages enhance circuit performance by reduc- ing stray inductances and capacitance. The D-Pak (TO-252AA) Features surface mount package brings the advantages of HEXFETs to Surface Mountable (Order As IRFR9220) urface high volume applications where PC Board surface mounting is desirable. The surface mount option IRFR9220 is provided on Straight Lead Option (Order As IRFU9220) 16mm tape. The straight lead option IRFU9220 of the device Repetitive Avalanche Ratings is called the I-Pak (TO-251AA). Dynamic dv/dt Rating They are well suited for applications where limited heat dissipa- ; : tion is required such as, computers and peripherals, telecom- Simple Drive Requirements munications equipment, DC/DC converters, and a wide range Ease of Paralleling of consumer products. g tp. Sorta 050 002m soma mE cote ot Li ae 200 90s 4 wax i of i a Sat 0216 5102 wa mw saz 10 9015 = on aos smone 163 9060 -L 206m LY : ' : reais 5 U0 get a02t t nh . pass Y f BACK VIEW 4 i lL a A r re , 01 9005 cpg 00 07 none oso 202m oi coi osaga ue a Your ot SIDE. VIEW 235 009m in ao a vse OO same Bon ,| l.. SATE QRLA ScoRCE adds more aces a EFONE SOLDER DAP 135 ee (AneAT Som Suarate ana + 7ueu? FOR TAPE ANO PEEL ORQERING AHO PACAENG SATE beam SGURCE . | DEORUATION SEE PACE C108 , r SIDE VIEW 259.0 tou May, | 2 255.0 108 WE T vee Sata be meucigs SOLER Teo OIE 2 Gyegroae sococa oF CUHEAT Sex suasace arta + zany? z BOTTOM VIEW 106 903) BOTTOM VIEW Case Style TO-252AA (IRFR Series) Case Style TO-251AA (IRFU Series) Dimensions in Millimeters and (Inches) All Dimensions in Millimeters and (Inches) a C-97- a a a INTERNATIONAL RECTIFIER - LE D i uassys2 godess 1 i IRFR9220, IRFR9222, IRFU9220, IRFU9222 Devices T-37-25 - Absolute Maximum Ratings . Parameter . IRFR9220, IAFUS220 IRFR9222, IRFU9222 Units Ip @ To = 26C Continuous Drain Current 3.6 -2.8 A Ip @ Tc = 100C Gontinuous Drain Current -2.3 -1.8 A IDM Pulsed Drain Current (1) -14 =i A Pp @ Tg = 25C Max. Power Disslpation 42 Ww Linear Derating Factor - 0.33 WIK(5) Vas Gate-to-Source Voltage 20 v Eas Single Pulse Avalanche Energy(2) 290 mJ (See Fig. 14) lan Avalanche Current 3.6 A (Repatitive or Non-Repatitive) @ (See Ear) Ear Repetitive Avalanche Energy (7) s se lan) mJ dvidt Peak Diode recovery dv/dt @ 5.0 Vins (See Fig. 17) @ Thre Sincge vompecature Range 55 fo 160 Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) C Electrical Characteristics @ ty = 25C (Unless Otherwise Specified) Parameter Type Min. Typ. | Max. | Units Test Conditions BVpsg_Drain-to-Source Sreakdown Voltage All -200 - - V_ [Veg = OV, Ip = ~250A - Rpg(on) Static Drain-to-Source InFFi@220 _ 1.0 1.6 I: Us2 On-State Resistance (4) a |Vgg = 10V, Ip =-1.8A IRFRS222 - 1.5 24 IRFU9222 Ipen) - On-State Drain Current @ IRFR9220 3.6 . | IRFU9220 _ _ A Vps> ID(on) x Rogen) Max. IRFR9222 | -2.8 Vas = ~10 IAFU9222 Vesith) Gate Threshold Voltage ALL -2.0 - -4.0 Vv |Vps = Vas: Ip = -250pHA Its Forward Transconductanca (4) ALL 1A 17 | | S) [Vps = -50V, Ipg = -1.8A Ipgg Zero Gate Voltage Drain Current - | -250 Vps = Max. Rating, Vag = 0V ALL - - -1000 HA Vos = 0.8 x Max. Rating Vas = OV, Ty = 125C Iggg Gate-to-Source Leakage Forward ALL - - ~500 | nA |Vaqg = -20V iggg _ Gate-to-Source Leakage Reverse ALL - - 500 nA |Vag = 20V Qg Total Gate Charge ALL _ 12 18 nC |Vag = -10V, Ip = -3.9A Vos 2 0.8 x Max. Rating Qgs Gate-to-Source Charge ALL - 2.0 3.0 nc See Fig. 16 Qga Gate-to-Drain (Miller") Charge - 7A 11 nC | (Independent or operating temperature) taon) Turn-On Delay Time ALL _- 8.8 13 ns |Vpp = -100V, Ip = -3.9A, Rg = 180 tr Rise Time ALL _ 27 41 ns |Rp = 240 fa(off) Turn-Off Delay Time ALL - 73 Wi ns |See Fig. 16 tt Fall Time ALL =_ 19 29 ns | (Independent of operating temperature) Ly Internal Orain Inductance ALL - 45 - nH | Measured from the drain Modifed MOSFET symbo! lead, 6mm (0.25 In.) from showing the internal package to center of die. inductances. a Ls Internal Source Inductance ALL _ 78 - nH Measured from the source lead, 6mm (0.25 In.) from package to source bonding pad. < Ciss Input Capacitance ALL =- 290 - pF |Ve@g = OV, Vpg = -25V Coss Output Capacitance ALL - Ti0 - pF {f = 1.0 MHz Cres Reverse Transfer Capacitance ALL - 38 - pF {See Fig. 10 C-98INTERNATIONAL RECTIFIER LLE D Bf vassuse go0a3s0 4 IRFR9220, IRFR9222, IRFU9220, IRFU9222 Devices Source-Drain Diode Ratings and Characteristics Parameter Type | Min. Typ. | Max. | Units 7. 7 Test Conditiong ~~ Is Continuous Source Current ALL - - -3.6 A Modified MOSFET symbol showing the integral (Body Diode) Reverse p-n junction rectifier. . Igy Pulsed Source Current au | | -4 7 A ares (Body Diode) (1) 5 Vgp Diode Forward Voltage (4) Au | | | -70 V_ [Ty = 28C, ig = -3.6A, V@g = OV ter Reverse Recovery Time ALL | 66 | 140 | 260 | no [Ty = 25C, Ip = -3.9A, di/dt = 100 Ayis Qar Reverse Recovery Charge ALL 0.34 0.73 15 po jf. ton Forward Turn-On Time ALL Intrinsic turn-on time ts negligible. Turn-on speed is substantially controlled by Lg + Lp. Thermal Resistance . ~ . . * Atnuc _-Junctlon-to-Case ALL - ad 3.0 | KWG) Fincs Case-to-Sink . _ | ab | | 47 | | KAWG) Typical solder mount (6) FihvA Junction-to-Ambient ALL - - 410 KWG) Typical socket mount (1) Repstitive Rating; Pulse width limited by Isp = -3.6A, difdt < 95Alus, G@ ww = cw . Te maximum junction temperature (see figure 5) Vpp = 8Vpsg. Ty = 150C WIK = WIC . @ Vpp = ~S0V, Starting Ty = 25C, Suggested Rq = 182 Mounting pad must cover heatsink surface L = 35 mH, Ag = 260, @) Puise width < 300 pis; Duty Cycle s 2% 0, area. See Case Style drawing on front page. Peak [| = -3.6A ~ The information shown on the following graphs applies also to the IRFU devices. 7,5 10 NEGATIVE Ip, DRAIN CURRENT (AMPERES) o o BOps PULSE TEST s| Yong < -S0V -10V * NEGATIVE Ip, ORAIN CURRENT (AMPERES) 0 2 T y=4150C Ty25c O.1 2 J 5 5 2 4 . -0 1072 40 60 80 100 ) 2 4 6 8 10 NEGATIVE Vpg, DRAIN-TO-SOURCE VOLTAGE (VOLTS) NEGATIVE Vgg. GATE-TO-SOURCE VOLTAGE (VOLTS) Fig. 1 Typical Output Characteristics " Fig. 2 Typical Transfer Characteristics - were C-992 whe te * eee _ men bee ee we INTERNATIONAL RECTIFIER LLE O J vassyse oooaas1 a i IRFR9220, IRFR9222, IRFU9220, IRFU9222 Devices T-37-25 | 7.5 102 6.0 NEGATIVE Ip, DRAIN CURRENT (AMPERES) NEGATIVE Ip, DRAIN CURRENT (AMPERES) a 4.5 # Ir j=190C 0.0 -4V 9.4 SINGLE PULSE 0 3 6 9 12 15 4 2 5 490 2 5 492 2 5 493 NEGATIVE Vpg, DRAIN-TO-SOURCE VOLTAGE (VOLTS) NEGATIVE Vpg, ORAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 3 Typical Saturation Characteristics Fig. 4 Maximum Safe Operating Area 4 10 aL <-t 4} <ta oO <9 NOTES: . 4. DUTY FACTOR, D=t,/to 4074 4073 4072 0.4 4 . 10 ty, RECTANGULAR PULSE DURATION (SECONDS) THERMAL RESPONSE (Zp yc) ro ra a Fig. 5 Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration C-100LLE D i uassuse gooaase h ~ - - foe ae eb IRFR9220, IRFR9222, IRFU9220, IRFU9222 Devices INTERNATIONAL RECTIFIER 80ps PULSE TEST Vpg = ~50V = oO T y= 150C TRANSCONODUCTANCE (SIEMENS) o Sfs: 0 2 4 6 8 410 NEGATIVE Ip, OAAIN CURRENT (AMPERES) Fig. 6 Typical Transconductance Vs. Drain Current BVgsg. DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 0.75 ~60 -40 -20 0 20 40 60 80 100 120 140 160 Ty. JUNCTION TEMPERATURE ( C) Fig. 8 Breakdown Voltage Vs. Temperature C-101 T-37-25 2 0.4 0.0 1.0 2.0 3.0 4.0 5.0 NEGATIVE Vop. SOURCE-TO-ORAIN VOLTAGE (VOLTS) NEGATIVE Ipq, REVERSE DAAIN CURRENT (AMPERES) Fig. 7 Typical Source-Drain Diode Forward Voltage of ano 2.4 -~ a Ags (on): ORAIN-TO-SOURCE ON RESISTANCE (NOFMALIZEO) _ ne Veg = -10 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 Ty JUNCTION TEMPERATURE ( C) Fig. 9 Normalized On-Resistance Vs. Temperaturewalier thee 0% ON oe an ee wn ere eee ERT INTERNATIONAL RECTIFIER ALE D B usssuse g00a8353 3 i IRFR9220, IRFR9222, IRFU9220, IRFU9222 Devices T-37-25 750 - G 20 ~ 5 Ip = -3.9A% = Cgg + Cyg Cys SHORTED 8 Vpg = ~160V. =C Vog = 100V. gd - lu. os : 600 . . @ 16 Vne = - Cas + Cys Cgq / (Cys + Cgq) = Vos 40Vv = Cy. + C d if ds gd $ w 450 @ 12 ao a 3 E, ? 2 e a 300 uy 8 G & o < o cs a 150 2 4 Ww > B FOR TEST CIRCUIT 0 8 SEE FIGURE 16 1 2 5 40 2 5 102 2 0 4 8 12 16 20 NEGATIVE Vpg, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Gg. TOTAL GATE CHARGE (nC) Fig. 10 Typical Capacitance Vs. Drain-to-Source Voltage Fig. 11 Typical Gate Charge Vs. Gate-to-Source Voltage w b mn oO Oo Qo Ros (on) DRAIN-TO-SOURCE ON RESISTANCE ro NEGATIVE Ip, DRAIN CURRENT (AMPERES) 1.0 Veg = ~20V 0.0 0 4 8 12 16 20 25 75 100 125 150 NEGATIVE Ip, DRAIN CURRENT (AMPERES) Tg. CASE TEMPERATURE ( 9c) Fig. 12 Typical On-Resistance Vs. Drain Current Fig. 13 Maximum Drain Current Vs. Case Temperature C-102LLE DO I 4455452 GO08354 5 IRFR9220, IRFR9222, IRFU9220, IRFU9222 Devices INTERNATIONAL RECTIFIER T-37-25 300 . 5 PEAK IL = -3,.6A saesoce & Vpn = ~50V 2 Veg -0vPety a 240 4 ai iu x= 2 180 Ss Fig. 14a Unclamped Inductive Test Circult = << fi 120 at = a ~ TRS ror 4 Ss / Yoo 2 60 a ~ / on 1 N yn << ty Ww Vos 0 25 50 75 400 125 150 BYpss STARTING Ty, JUNCTION TEMPERATURE ( C) Fig. 14b Unclamped Inductive Waveforms Fig. 14c Maximum Avalanche Vs. Starting Junction Temperature +>}-_+ Y\ fafan) 100 Veg =-10Vp tp 4+ Fig. 15a Switching Time Test Circuit Fig. 15b Switching Time Waveforms ~Vos CURRENT od ISOLATED REGULATOR UPPLY) 12 BATTERY Qg {| AW RHeme eaenmorn p68 eo ! 0 -_--- Vg . | : GATE VOLTAGE Oo +Vps Ig + Ip CURRENT CURRENT SAMPLING SAMPLING ' CHARGE RESISTOR RESISTOR . Fig. 16a Basic Gate Charge Waveform Fig. 16b Gate Charge Test Circuit C-103m= - ores nena ee INTERNATIONAL RECTIFIER 11E DO i 4assu52 000 IRFR9220, IRFR9222, IRFU9220, IRFU9222 Devices aass 7 fj DAIVER GATE DRIVE @ pw 1 pen _> D= PERIOD ro PW _ CIRCUIT LAYOUT CONSIDERATIONS \ y ve 1 < LOW STRAY INDUCTANCE Wi Y} en * GROUND PLANE - A LOW LEAKAGE INDUCTANCE 4) our @- CURRENT TRANSFORMER Fi @| OUT tgp WAVEFORM REVERSE dvdt RECOVERY BODY DIODE FORWARDS, t . CURRENT o CURRENT p @ @ | OUT Vpg WAVEFORM Fk | | @ RE-APPLIED ! BODY DIODE, , FORWARD DROP vounGE SIGN N-CHANNEL y ORIVER DIODE RECOVERY aa dvidt wo Tr (na) @| Inouctor CURRENT 4) oriven dvidt CONTROLLED 8Y Rg ee at DRIVER COMPLIMENT OF DUT MOY IS Rg Isp CONTROLLEO BY DUTY FACTOR, D > YQ GQ GG QV 7 Fig. 17 Peak Diode Recovery dv/dt Test Circuit ORDERING INFORMATION PACKAGING IRFR Series Tape and reel FEED DIRECTION when ordering, add TR after the part number 1810062) yy ey 4100.16 and the quantity [ tess 39 (0150 (order in multiples of 3,000 pieces). O-OO0-0-0-0-0-6 Example: IRFR9220TR 15,000 pieces. rd 16 2 (0.632 (E { Es - 224 10.881) Max, | 495 (05311 ee oA. 125 0 492 } + S75 47500 gig ko L{ 50 (1.968) MIN. 330 112.988) Le a7 OIA. ALL DIMENSIONS IN MILLIMETER {INCHES} C-104