1
SEMICONDUCTORS
SUMMARY
BVCEO = -60V : RSAT = 39m ; IC= -5.5A
DESCRIPTION
Packaged in the SOT223 outline this new low saturation 60V PNP transistor
offers extremely low on state losses making it ideal for use in DC-DC circuits
and various driving and power management functions.
FEATURES
•Extremely low equivalent on-resistance; RSAT = 39mV at 5A
•5.5 amps continuous current
•Up to 15 amps peak current
•Very low saturation voltages
•Excellent gain characteristics specified up to 10 Amps
APPLICATIONS
•DC - DC converters
•MOSFET gate drivers
•Charging circuits
•Power switches
•Motor control
DEVICE MARKING
ZXTP
2012
ZXTP2012G
ISSUE 1 - JUNE 2005
60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
DEVICE REEL
SIZE TAPE
WIDTH QUANTITY PER
REEL
ZXTP2012GTA 7” 12mm
embossed 1,000 units
ZXTP2012GTC 13” 4,000 units
ORDERING INFORMATION
PINOUT
TOP VIEW
SOT223
ZXTP2012G
SEMICONDUCTORS
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PARAMETER SYMBOL VALUE UNIT
Junction to ambient (a) R⍜JA 42 °C/W
NOTES
(a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
THERMAL RESISTANCE
PARAMETER SYMBOL LIMIT UNIT
Collector-base voltage BVCBO -100 V
Collector-emitter voltage BVCEO -60 V
Emitter-base voltage BVEBO -7 V
Continuous collector current IC-5.5 A
Peak pulse current ICM -15 A
Power dissipation at TA=25°C (a)
Linear derating factor PD3.0
24 W
mW/°C
Power dissipation at TA=25°C (b)
Linear derating factor PD1.6
12.8 W
mW/°C
Operating and storage temperature range Tj,T
stg -55 to +150 °C
ABSOLUTE MAXIMUM RATINGS
ZXTP2012G
SEMICONDUCTORS
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CHARACTERISTICS
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PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-base breakdown voltage BVCBO -100 -120 V IC=-100␮A
Collector-emitter breakdown voltage BVCER -100 -120 V IC=-1␮A, RBⱕ1k⍀
Collector-emitter breakdown voltage BVCEO -60 -80 V IC=-10mA*
Emitter-base breakdown voltage BVEBO -7 -8.1 V IE=-100␮A
Collector cut-off current ICBO ⬍1 -20
-0.5 nA
␮AVCB=-80V
VCB=-80V,Tamb=100⬚C
Collector cut-off current ICER
Rⱕ1k⍀
⬍1 -20
-0.5 nA
␮AVCB=-80V
VCB=-80V,Tamb=100⬚C
Emitter cut-off current IEBO ⬍1 -10 nA VEB=-6V
Collector-emitter saturation voltage VCE(SAT) -15
-55
-90
-195
-25
-70
-120
-250
mV
mV
mV
mV
IC=-0.1A, IB=-10mA*
IC=-1A, IB=-100mA*
IC=-2A, IB=-200mA*
IC=-5A, IB=-500mA*
Base-emitter saturation voltage VBE(SAT) -1030 -1150 mV IC=-5A, IB=-500mA*
Base-emitter turn-on voltage VBE(ON) -920 -1020 mV IC=-5A, VCE=-1V*
Static forward current transfer ratio HFE 100
100
45
10
250
200
90
25
300 IC=-10mA, VCE=-1V*
IC=-2A, VCE=-1V*
IC=-5A, VCE=-1V*
IC=-10A, VCE=-1V*
Transition frequency fT120 MHz IC=-100mA, VCE=-10V
f=50MHz
Output capacitance COBO 48 pF VCB=-10V, f=1MHz*
Switching times tON
tOFF
39
370 ns IC=1A, VCC=10V,
IB1=IB2=100mA
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
* Measured under pulsed conditions. Pulse width ⱕ300␮s; duty cycle ⱕ2%.
ZXTP2012G
SEMICONDUCTORS
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TYPICAL CHARACTERISTICS
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SEMICONDUCTORS
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ISSUE 1 - JUNE 2005
Europe
Zetex GmbH
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D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
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Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
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Zetex (Asia) Ltd
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Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex Semiconductors plc
Zetex Technology Park
Chadderton, Oldham, OL9 9LL
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
Thispublicationisissuedtoprovideoutlineinformationonlywhich(unlessagreedbytheCompanyinwriting)maynotbeused,appliedorreproduced
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reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
© Zetex Semiconductors plc 2005
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PAD LAYOUT DETAILSPACKAGE OUTLINE
DIM Millimeters Inches DIM Millimeters Inches
Min Max Min Max Min Max Min Max
A - 1.80 - 0.071 e 2.30 BSC 0.0905 BSC
A1 0.02 0.10 0.0008 0.004 e1 4.60 BSC 0.181 BSC
b 0.66 0.84 0.026 0.033 E 6.70 7.30 0.264 0.287
b2 2.90 3.10 0.114 0.122 E1 3.30 3.70 0.130 0.146
C 0.23 0.33 0.009 0.013 L 0.90 - 0.355 -
D 6.30 6.70 0.248 0.264 - ----
PACKAGE DIMENSIONS