Product Datasheet Search Results:
4 Pages, 103 KB, Original- 2SK3474-01
- Fuji Electric
- 2SK3474-01
Product Details Search Results:
Fujielectric.co.jp/2SK3474-01
{"Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"169 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"33 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0700 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"132 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"150 V","Transisto...
1497 Bytes - 12:41:55, 25 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2SK3474-01.pdf | 0.10 | 1 | Request |
