Datasheet.Directory

{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2000 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2600 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"43 V","Trans...

{"Category":"MOSFET","Maximum Drain Source Voltage":"43 V","Typical Rise Time":"14 ns","Typical Turn-Off Delay Time":"115 ns","Description":"Value","Maximum Continuous Drain Current":"1 A","Package":"3SC-96","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"18 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"195@10V mOhm","Manufacturer":"Renesas Electronics","Typical Fall Time":"38 ns"}...

{"Terminal Finish":"TIN BISMUTH","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.2000 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2600 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...

{"Polarity":"N","Product Category":"MOSFET","Gate-Source Voltage (Max)":"\ufffd20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"1 A","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Res":"0.195 ohm","Packaging":"Tape and Reel","Power Dissipation":"1.25 W","Operating Temp Range":"-55C to 150C","Package Type":"SC-96","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1","Manufacturer":"RENESAS TECHNOLOGY"}...