Product Datasheet Search Results:
9 Pages, 88 KB, Original- 2SK3082(L)
- Renesas Technology / Hitachi Semiconductor
- Silicon N Channel MOS FET High Speed Power Switching
12 Pages, 59 KB, Original- 2SK3082(L)
- Renesas Electronics
- 0.15 ohm, POWER, FET
Product Details Search Results:
Renesas.com/2SK3082(L)
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"LDPAK-3","Terminal Form":"THROUGH-HOLE","Package Style":"IN-LINE","Drain-source On Resistance-Max":"0.1500 ohm","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Number of Terminals":"3"}...
993 Bytes - 12:49:10, 10 March 2025
Documentation and Support
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| 6AG3111-2SK30-0AB0-ZD30D61M10.pdf | 8.78 | 1 | Request | |
| 6AG3111-2SK30-0AB0-ZD61S10.pdf | 8.78 | 1 | Request | |
| 6AG3111-2SK30-0AB0-ZD30D61.pdf | 8.78 | 1 | Request | |
| 6AG3111-2SK30-0AB0-ZD40S10.pdf | 8.78 | 1 | Request | |
| 6AG3111-2SK30-0AB0-ZD30.pdf | 8.78 | 1 | Request | |
| 6AG3111-2SK30-0AB0-ZM10S10.pdf | 8.78 | 1 | Request | |
| 6AG3111-2SK30-0AB0.pdf | 8.78 | 1 | Request | |
| 6AG3111-2SK30-0AB0-ZD61.pdf | 8.78 | 1 | Request | |
| 6AG3111-2SK30-0AB0-ZD61M10S10.pdf | 8.78 | 1 | Request | |
| 6AG3111-2SK30-0AB0-ZD40M10S10.pdf | 8.78 | 1 | Request | |
| 6AG3111-2SK30-0AB0-ZS10.pdf | 8.78 | 1 | Request | |
| 6AG3111-2SK30-0AB0-ZD61M10.pdf | 8.78 | 1 | Request |
